P4KA13A-23 [VISHAY]
Trans Voltage Suppressor Diode, 400W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;型号: | P4KA13A-23 |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 400W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 局域网 二极管 |
文件: | 总4页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
P4KA6.8 thru P4KA43A
Vishay Semiconductors
formerly General Semiconductor
Automotive Transient Voltage Suppressors
Breakdown Voltage 6.8 to 43V
Peak Pulse Power 400W
Features
• Plastic package has underwriters laboratory
flammability classification 94V-0
• Designed for under the hood applications
• Exclusive patented PAR® oxide-passivated chip
construction
DO-204AL (DO-41)
• 400W peak pulse power capability with a
10/1000µs waveform, repetition rate (duty cycle):
0.01%
1.0 (25.4)
MIN.
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
0.107 (2.7)
0.080 (2.0)
DIA.
• For devices with V
≥ 10V, I are typically less
D
(BR)
than 1.0µA at T = 150°C
A
0.205 (5.2)
0.160 (4.1)
• High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Mechanical Data
Case: JEDEC DO-204AL molded plastic body over
passivated junction
1.0 (25.4)
MIN.
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
0.034 (0.86)
0.028 (0.71)
DIA.
Polarity: The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
Available in uni-directional only
Mounting Position: Any
Weight: 0.012 oz., 0.3 g
Dimensions in inches and (millimeters)
*
Patent #’s 4,980,315
Packaging codes/options:
5,166,769
1/5K per Bulk Box, 50K/box
5,278,094
4/5.5K per 13" Reel (52mm Tape), 22K/box
23/3K per Ammo Box (52mm Tape), 27K/box
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Minimum 400
See Next Table
1.0
Unit
W
Peak pulse power dissipation with a 10/1000µs
PPPM
waveform(1) (Fig. 1)
Peak pulse current with a 10/1000µs waveform(1) (Fig.3)
IPPM
A
Steady state power dissipation at TL = 75°C
lead lengths 0.375" (9.5mm)(2)
PM(AV)
W
Peak forward surge current, 8.3ms single half sine-wave(3)
Maximum instantaneous forward voltage at 25A
Operating junction and storage temperature range
IFSM
VF
40
3.5
A
V
TJ, TSTG
–65 to +185
°C
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
Document Number 88364
03-May-02
www.vishay.com
1
P4KA6.8 thru P4KA43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TA = 25°C unless otherwise noted)
T = 150°C Maximum
Maximum
Temp.
Clamping Coefficient
J
Breakdown Voltage
Maximum Maximum Peak Pulse Maximum
Reverse
Leakage
V
(1) at I
Test
Current
Stand-off
Voltage
Reverse
Leakage
Surge
(BR)
T
(V)
Current
Voltage
of
V
(BR)
(2)
I
V
WM
at V
at V
I
at l
T
WM
WM
PPM
PPM
Device Type
Min
Max
(mA)
(V)
I
(µA)
I
(µA)
(A)
V (V)
C
(% / °C)
D
D
P4KA6.8
P4KA6.8A
P4KA7.5
P4KA7.5A
P4KA8.2
P4KA8.2A
P4KA9.1
P4KA9.1A
P4KA10
P4KA10A
P4KA11
P4KA11A
P4KA12
P4KA12A
P4KA13
P4KA13A
P4KA15
P4KA15A
P4KA16
P4KA16A
P4KA18
P4KA18A
P4KA20
P4KA20A
P4KA22
P4KA22A
P4KA24
P4KA24A
P4KA27
P4KA27A
P4KA30
P4KA30A
P4KA33
P4KA33A
P4KA36
P4KA36A
P4KA39
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
10
10
10
10
10
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.0
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
300
1000
1000
500
500
200
200
50
50
20
20
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.2
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.057
0.057
0.060
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
300
150
150
50
50
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
P4KA39A
P4KA43
P4KA43A
6.7
Notes:
(1) V(BR) measured after IT applied for 300µs, IT = square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88364
03-May-02
P4KA6.8 thru P4KA43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Pulse Derating Curve
Fig. 1 – Peak Pulse Power Rating Curve
100
100
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
75
50
10
1
25
0
0.1
25
50
75
150
175
200
0
100
125
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
td — Pulse Width (sec.)
TA — Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
Fig. 4 – Typical Junction Capacitance
20,000
10,000
150
100
50
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
TJ = 25°C
Pulse Width (td)
tr = 10µsec.
is defined as the point
Peak Value
IPPM
where the peak current
decays to 50% of IPPM
Measured at
Zero Bias
Half Value — IPP
2
1,000
IPPM
Measured at
Stand-Off
Voltage, VWM
10/1000µsec. Waveform
as defined by R.E.A.
td
100
200
0
1.0
3.0
4.0
0
2.0
1.0
10
100
200
V(BR) — Breakdown Voltage (V)
t — Time (ms)
Fig. 5 – Steady State Power
Fig. 6 - Maximum Non-Repetitive/Peak
Forward Surge Current
Derating Curve
1.00
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
L = 0.375" (9.5mm)
Lead Lengths
100
50
0.75
0.50
1.58 x 1.58 x 0.040"
(40 x 40 x 1mm)
Copper Heat Sinks
0.25
0
10
25
50
75
150
175
200
0
100
125
1
5
10
50
100
Number of Cycles at 60 Hz
TL — Lead Temperature (°C)
Document Number 88364
03-May-02
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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