PN4118A-TR3 [VISHAY]
Transistor;型号: | PN4118A-TR3 |
厂家: | VISHAY |
描述: | Transistor |
文件: | 总6页 (文件大小:86K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2N/PN/SST4117A Series
Vishay Siliconix
N-Channel JFETs
2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119
PRODUCT SUMMARY
Part Number
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
4117
4118
4119
−0.6 to −1.8
−1 to −3
−40
−40
−40
70
80
30
80
−2 to −6
100
200
FEATURES
BENEFITS
APPLICATIONS
D Ultra-Low Leakage: 0.2 pA
D Very Low Current/Voltage Operation
D Ultrahigh Input Impedance
D Low Noise
D Insignificant Signal Loss/Error Voltage
D High-Impedance Transducer
with High-Impedance Source
Amplifiers
D Low Power Consumption (Battery)
D Maximum Signal Output, Low Noise
D High Sensitivity to Low-Level Signals
D Smoke Detector Input
D Infrared Detector Amplifier
D Precision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-206AF
(TO-72)
TO-226AA
(TO-92)
TO-236
(SOT-23)
S
C
D
S
1
2
1
2
4
D
S
1
2
3
G
3
G
3
D
G
Top View
2N4117A
2N4118A
2N4119A
Top View
PN4117A
PN4118A
PN4119A
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
For applications information see AN105.
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
1
2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
1
Gate-Source/Gate-DrainVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Power Dissipation (case 25_C) :
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
a
(2N Prefix) . . . . . . . . . . . . . . . . . . . . . . 300 mW
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C
b
(PN, SST Prefix) . . . . . . . . . . . . . . . . 350 mW
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature :
Notes
(2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C
a. Derate 2 mW/_C above 25_C
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
4117
4118
4119
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= −1 mA , V = 0 V
−70
−40
−40
−40
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
Saturation Drain Current
V
V
= 10 V, I = 1 nA
−0.6
−1.8
−1
−3
−2
−6
GS(off)
DS
D
I
V
= 10 V, V = 0 V
DS GS
90
240
600
mA
30
80
200
DSS
V
= −20 V
DS
GS
−0.2
−0.4
−1
−1
−1
pA
V
= 0 V
2N
V
V
T
= −20 V
GS
= 0 V
−2.5
−2.5
−2.5
nA
DS
= 150_C
A
Gate Reverse Current
I
GSS
PN
−0.2
−0.2
−1
−1
−1
V
V
= −10 V
GS
pA
nA
= 0 V
DS
SST
−10
−10
−10
V
= −10 V
GS
V
= 0 V
PN/SST
−0.03
−2.5
−2.5
−2.5
DS
T
= 100_C
A
b
Gate Operating Current
I
G
V
= 15 V, I = 30 mA
−0.2
0.2
DG
D
pA
V
b
Drain Cutoff Current
I
V
= 10 V, V = −8 V
DS GS
D(off)
b
Gate-Source Forward Voltage
V
I
G
= 1 mA , V = 0 V
0.7
GS(F)
DS
Dynamic
Common-Source
g
210
250
330
70
80
100
fs
Forward Transconductance
V
= 10 V, V = 0 V
GS
DS
mS
f = 1 kHz
Common-Source
Output Conductance
g
os
3
3
5
3
10
3
2N/PN
1.2
1.2
0.3
0.3
Common-Source
Input Capacitance
C
iss
V
= 10 V
= 0 V
SST
2N/PN
SST
DS
GS
V
pF
1.5
1.5
1.5
f = 1 MHz
Common-Source
Reverse Transfer Capacitance
C
rss
V
= 10 V, V = 0 V
nV⁄
√Hz
DS
GS
b
Equivalent Input Noise Voltage
e
n
15
f = 1 kHz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. This parameter not registered with JEDEC.
NT
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
2
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
1000
300
1 nA
100 pA
10 pA
IDSS @ VDS = 10 V, VGS = 0 V
100 mA
g
@ VDS = 10 V, VGS = 0 V
fs
VGS(off) = −2.5 V
f = 1 kHz
800
600
240
180
120
60
10 mA
T
= 125_C
IGSS @ 125_C
A
g
fs
100 mA
400
200
0
10 mA
IDSS
1 pA
IGSS @ 25_C
T
= 25_C
A
0
0.1 pA
0
−1
−2
−3
−4
−5
0
6
12
18
24
30
V
GS(off) − Gate-Source Cutoff Voltage (V)
VDG − Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
15
5
200
160
V
= −2.5 V
GS(off)
g
os
12
9
4
3
2
1
0
rDS
T
A
= −55_C
120
80
25_C
125_C
6
rDS @ ID = 10 mA, VGS = 0 V
3
40
0
g
@ VDS = 10 V, VGS = 0 V
os
VDS = 10 V
f = 1 kHz
f = 1 kHz
0
0
−1
−2
−3
−4
−5
0.01
0.1
ID − Drain Current (mA)
1
V
GS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
Output Characteristics
100
80
500
400
300
200
VGS(off) = −0.7 V
VGS(off) = −2.5 V
VGS = 0 V
−0.1 V
VGS = 0 V
60
−0.5 V
−1.0 V
−0.2 V
40
−0.3 V
−0.4 V
−0.5 V
20
0
100
0
−1.5 V
−2.0 V
0
4
8
12
16
20
0
4
8
12
16
20
V
DS − Drain-Source Voltage (V)
VDS − Drain-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
3
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
100
200
VGS(off) = −0.7 V
VDS = 10 V
VGS(off) = −0.7 V
VDS = 10 V
f = 1 kHz
80
160
T
A
= −55_C
25_C
60
40
120
80
T
A
= 125_C
125_C
25_C
20
0
40
0
−55_C
−0.2
0
−0.4
−0.6
−0.8
−1.0
0
−0.2
−0.4
−0.6
−0.8
−1.0
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
500
400
300
240
VGS(off) = −2.5 V
VDS = 10 V
VGS(off) = −2.5 V
VDS = 10 V
f = 1 kHz
T
A
= −55_C
T
A
= −55_C
300
200
180
120
25_C
25_C
125_C
100
0
125_C
60
0
0
−1
−2
−3
−4
−5
0
−1
−2
−3
−4
−5
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
100
80
2.0
1.6
g
R
L
f = 1 MHz
fs
A
+
V
1 ) R g
os
L
Assume VDD = 15 V, VDS = 5 V
10 V
R
+
L
I
D
VDS = 0 V
60
40
1.2
0.8
10 V
VGS(off) = −0.7 V
20
0
0.4
0
−2.5 V
0
−4
−8
−12
−16
−20
0.01
0.1
1
ID − Drain Current (mA)
VGS − Gate-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
4
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
Equivalent Input Noise Voltage vs. Frequency
0.5
200
160
f = 1 MHz
VDS = 10 V
0.4
ID = 10 mA
0.3
0.2
0.1
0
120
80
VDS = 0 V
10 V
VGS = 0 V
40
0
100 k
0
−4
−8
−12
−16
−20
10
100
1 k
10 k
V
GS − Gate-Source Voltage (V)
f − Frequency (Hz)
Output Conductance vs. Drain Current
On-Resistance vs. Drain Current
2
1
0
20
16
12
8
VGS(off) = −0.7 V
VGS(off) = −2.5 V
T
A
= −55_C
25_C
125_C
−2.5 V
VDS = 10 V
f = 1 kHz
4
0
T
A
= 25_C
0.01
0.1
D − Drain Current (mA)
1
0.01
0.1
1
I
ID − Drain Current (mA)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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