PN4119A [VISHAY]
N-Channel JFETs; N沟道JFET的
| 型号： | PN4119A |
| 厂家： | 
VISHAY |
| 描述： | N-Channel JFETs |
| 文件： | 总5页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N/PN/SST4117A Series
Vishay Siliconix
N-Channel JFETs
2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119
PRODUCT SUMMARY
Part Number
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
4117
4118
4119
−0.6 to −1.8
−1 to −3
−40
−40
−40
70
80
30
80
−2 to −6
100
200
FEATURES
BENEFITS
APPLICATIONS
D Ultra-Low Leakage: 0.2 pA
D Very Low Current/Voltage Operation
D Ultrahigh Input Impedance
D Low Noise
D Insignificant Signal Loss/Error Voltage
D High-Impedance Transducer
with High-Impedance Source
Amplifiers
D Low Power Consumption (Battery)
D Maximum Signal Output, Low Noise
D High Sensitivity to Low-Level Signals
D Smoke Detector Input
D Infrared Detector Amplifier
D Precision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-206AF
(TO-72)
TO-226AA
(TO-92)
TO-236
(SOT-23)
S
C
D
S
1
2
1
2
4
D
S
1
2
3
G
3
G
3
D
G
Top View
2N4117A
2N4118A
2N4119A
Top View
PN4117A
PN4118A
PN4119A
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
For applications information see AN105.
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
1
2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
1
Gate-Source/Gate-DrainVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Power Dissipation (case 25_C) :
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
a
(2N Prefix) . . . . . . . . . . . . . . . . . . . . . . 300 mW
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C
b
(PN, SST Prefix) . . . . . . . . . . . . . . . . 350 mW
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature :
Notes
(2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C
a. Derate 2 mW/_C above 25_C
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
4117
4118
4119
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= −1 mA , V = 0 V
−70
−40
−40
−40
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
Saturation Drain Current
V
V
= 10 V, I = 1 nA
−0.6
−1.8
−1
−3
−2
−6
GS(off)
DS
D
I
V
= 10 V, V = 0 V
DS GS
90
240
600
mA
30
80
200
DSS
V
= −20 V
DS
GS
−0.2
−0.4
−1
−1
−1
pA
V
= 0 V
2N
V
V
T
= −20 V
GS
= 0 V
−2.5
−2.5
−2.5
nA
DS
= 150_C
A
Gate Reverse Current
I
GSS
PN
−0.2
−0.2
−1
−1
−1
V
V
= −10 V
GS
pA
nA
= 0 V
DS
SST
−10
−10
−10
V
= −10 V
GS
V
= 0 V
PN/SST
−0.03
−2.5
−2.5
−2.5
DS
T
= 100_C
A
b
Gate Operating Current
I
G
V
= 15 V, I = 30 mA
−0.2
0.2
DG
D
pA
V
b
Drain Cutoff Current
I
V
= 10 V, V = −8 V
DS GS
D(off)
b
Gate-Source Forward Voltage
V
I
G
= 1 mA , V = 0 V
0.7
GS(F)
DS
Dynamic
Common-Source
g
210
250
330
70
80
100
fs
Forward Transconductance
V
= 10 V, V = 0 V
GS
DS
mS
f = 1 kHz
Common-Source
Output Conductance
g
os
3
3
5
3
10
3
2N/PN
1.2
1.2
0.3
0.3
Common-Source
Input Capacitance
C
iss
V
= 10 V
= 0 V
SST
2N/PN
SST
DS
GS
V
pF
1.5
1.5
1.5
f = 1 MHz
Common-Source
Reverse Transfer Capacitance
C
rss
V
= 10 V, V = 0 V
nV⁄
√Hz
DS
GS
b
Equivalent Input Noise Voltage
e
n
15
f = 1 kHz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. This parameter not registered with JEDEC.
NT
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
2
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
1000
300
1 nA
100 pA
10 pA
IDSS @ VDS = 10 V, VGS = 0 V
100 mA
g
@ VDS = 10 V, VGS = 0 V
fs
VGS(off) = −2.5 V
f = 1 kHz
800
600
240
180
120
60
10 mA
T
= 125_C
IGSS @ 125_C
A
g
fs
100 mA
400
200
0
10 mA
IDSS
1 pA
IGSS @ 25_C
T
= 25_C
A
0
0.1 pA
0
−1
−2
−3
−4
−5
0
6
12
18
24
30
V
GS(off) − Gate-Source Cutoff Voltage (V)
VDG − Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
15
5
200
160
V
= −2.5 V
GS(off)
g
os
12
9
4
3
2
1
0
rDS
T
A
= −55_C
120
80
25_C
125_C
6
rDS @ ID = 10 mA, VGS = 0 V
3
40
0
g
@ VDS = 10 V, VGS = 0 V
os
VDS = 10 V
f = 1 kHz
f = 1 kHz
0
0
−1
−2
−3
−4
−5
0.01
0.1
ID − Drain Current (mA)
1
V
GS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
Output Characteristics
100
80
500
400
300
200
VGS(off) = −0.7 V
VGS(off) = −2.5 V
VGS = 0 V
−0.1 V
VGS = 0 V
60
−0.5 V
−1.0 V
−0.2 V
40
−0.3 V
−0.4 V
−0.5 V
20
0
100
0
−1.5 V
−2.0 V
0
4
8
12
16
20
0
4
8
12
16
20
V
DS − Drain-Source Voltage (V)
VDS − Drain-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
3
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
100
200
VGS(off) = −0.7 V
VDS = 10 V
VGS(off) = −0.7 V
VDS = 10 V
f = 1 kHz
80
160
T
A
= −55_C
25_C
60
40
120
80
T
A
= 125_C
125_C
25_C
20
0
40
0
−55_C
−0.2
0
−0.4
−0.6
−0.8
−1.0
0
−0.2
−0.4
−0.6
−0.8
−1.0
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Transfer Characteristics
Transconductance vs. Gate-Source Voltage
500
400
300
240
VGS(off) = −2.5 V
VDS = 10 V
VGS(off) = −2.5 V
VDS = 10 V
f = 1 kHz
T
A
= −55_C
T
A
= −55_C
300
200
180
120
25_C
25_C
125_C
100
0
125_C
60
0
0
−1
−2
−3
−4
−5
0
−1
−2
−3
−4
−5
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
100
80
2.0
1.6
g
R
L
f = 1 MHz
fs
A
+
V
1 ) R g
os
L
Assume VDD = 15 V, VDS = 5 V
10 V
R
+
L
I
D
VDS = 0 V
60
40
1.2
0.8
10 V
VGS(off) = −0.7 V
20
0
0.4
0
−2.5 V
0
−4
−8
−12
−16
−20
0.01
0.1
1
ID − Drain Current (mA)
VGS − Gate-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
4
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
Equivalent Input Noise Voltage vs. Frequency
0.5
200
160
f = 1 MHz
VDS = 10 V
0.4
ID = 10 mA
0.3
0.2
0.1
0
120
80
VDS = 0 V
10 V
VGS = 0 V
40
0
100 k
0
−4
−8
−12
−16
−20
10
100
1 k
10 k
V
GS − Gate-Source Voltage (V)
f − Frequency (Hz)
Output Conductance vs. Drain Current
On-Resistance vs. Drain Current
2
1
0
20
16
12
8
VGS(off) = −0.7 V
VGS(off) = −2.5 V
T
A
= −55_C
25_C
125_C
−2.5 V
VDS = 10 V
f = 1 kHz
4
0
T
A
= 25_C
0.01
0.1
D − Drain Current (mA)
1
0.01
0.1
1
I
ID − Drain Current (mA)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
5
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