PN4391-TR5-E3 [VISHAY]

Transistor;


型号：	PN4391-TR5-E3
厂家：	VISHAY
描述：	Transistor
文件：	总7页 (文件大小：78K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N/PN/SST4391 Series

Vishay Siliconix

N-Channel JFETs

2N4391

2N4392

2N4393

PN4391

PN4392

PN4393

SST4391

SST4392

SST4393

PRODUCT SUMMARY

Part Number V_GS(off)(V) r_DS(on)Max (ꢀ ) I_D(off)Typ (pA) t_ONTyp (ns)

2N/PN/SST4391

2N/PN/SST4392

2N/PN/SST4393

–4 to –10

–2 to –5

–0.5 to –3

100

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 4391<30

ꢀ

D Low Error Voltage

D Analog Switches

D Choppers

D Fast Switching—t_ON: 4 ns

D High-Speed Analog Circuit Performance

D Negligible “Off-Error,” Excellent Accuracy

D Good Frequency Response, Low Glitches

D Eliminates Additional Buffering

D High Off-Isolation: I_D(off)with Low

D Sample-and-Hold

D Normally “On” Switches

D Current Limiters

D Commutators

Leakage

D Low Capacitance: < 3.5 pF

D Low Insertion Loss

DESCRIPTION

The 2N/PN/SST4391 series features many of the superior

characteristics of JFETs which make it a good choice for

demanding analog switching applications and for specialized

amplifier circuits.

The 2N series hermetically-sealed TO-206AA (TO-18) can is

available with processing per MIL-S-19500 (see Military

Information). Both the PN, TO-226AA (TO-92), and SST,

TO-236 (SOT-23), series are available in tape-and-reel for

automated assembly (see Packaging Information). For similar

dual products, see the 2N5564/5565/5566 data sheet.

TO-206AA

(TO-18)

TO-226AA

(TO-92)

TO-236

(SOT-23)

G and Case

Top View

2N4391

2N4392

2N4393

PN4391

PN4392

PN4393

SST4391 (CA)*

SST4392 (CB)*

SST4393 (CC)*

*Marking Code for TO-236

For applications information see AN104 and AN106

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-1

2N/PN/SST4391 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage:

Operating Junction Temperature :

(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . –40 V

(2N Prefix) . . . . . . . . . . . . . . . . . . –55 to 200 _C

(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . –35 V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C

(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C

Power Dissipation :

Notes

(2N Prefix) . . . . . . . . . . (T = 25_C) 1800 mW

(PN/SST Prefixes) . . . . . . . . . . . . . . . 350 mW

Storage Temperature :

(2N Prefix) . . . . . . . . . . . . . . . . . . –65 to 200 _C

a. Derate 10 mW/_C above 25_C

(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C

b. Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Limits

4391

4392

4393

Parameter

Static

Symbol

Test Conditions

Typ^aMin Max Min Max Min Max Unit

Gate-Source

Breakdown Voltage

= –1 ꢁA, V = 0 V

–55

–40

–4

–40

–2

–40

(BR)GSS

= 20 V

= 15 V

2N/PN: I = 1 nA

Gate-Source

Cutoff Voltage

–10

–5

–0.5

–3

GS(off)

SST: I = 10 nA

150

Saturation Drain

Current

SST

100

= 20 V, V = 0 V

DSS

2N/SST

–5

–13

–1

–3

–5

–100

–1000

–200

–100

–1000

–200

–100

–1000

–200

= –20 V

= 0 V

2N: T = 150_C

Gate Reverse Current

Gate Operating Current

GSS

PN:

= 100_C

= 125_C

SST:

= 15 V, I = 10 mA

DG D

2N: V = –5 V

100

2N: V = –7 V

100

2N: V = –12 V

100

= 20 V

PN: V = –5 V

0.005

PN: V = –7 V

PN: V = –12 V

SST V = 10 V, V = –10 V

100

200

100

200

Drain Cutoff Current

D(off)

2N: V = –5 V

= 20 V

2N: V = –7 V

= 150_C

2N: V = –12 V

200

PN: V = –5 V

200

0.4

= 20 V

PN: V = –7 V

200

= 100_C

PN: V = –12 V

= 10 V

SST: V = –10 V

= 125_C

= 3 mA

= 6 mA

= 12 mA

0.25

0.3

Drain-Source

On-Voltage

0.4

= 0 V

DS(on)

0.35

0.4

Drain-Source

On-Resistance

= 0 V, I = 1 mA

100

ꢀ

DS(on)

0.7

Gate-Source

Forward Voltage

= 1 mA

= 0 V

GS(F)

PN/SST

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-2

2N/PN/SST4391 Series

Vishay Siliconix

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Limits

4391

4392

4393

Parameter

Dynamic

Symbol

Test Conditions

Typ^aMin Max Min Max Min Max Unit

Common-Source

Forward Transconductance

ꢁS

ꢀ

= 20 V, I = 1 mA, f = 1 kHz

Common-Source

Output Conductance

Drain-Source

On-Resistance

= 0 V, I = 0 mA , f = 1 kHz

100

DS(on)

Common-Source

Input Capacitance

= 20 V, V = 0 V

f = 1 MHz

iss

SST

2N: V = –5 V

3.3

3.2

2.8

3.5

3.4

3.0

3.6

3.5

3.1

3.5

2N: V = –7 V

3.5

2N: V = –12 V

3.5

PN: V = –5 V

Common-Source

Reverse Transfer

Capacitance

= 0 V

PN: V = –7 V

rss

f = 1 MHz

PN: V = –12 V

SST: V = –5 V

SST: V = –7 V

SST: V = –12 V

Equivalent Input

Noise Voltage

= 10 V, I = 10 mA

f = 1 kHz

nV⁄

√Hz

Switching

2N/PN

SST

d(on)

Turn-On Time

2N/PN

SST

= 10 V

= 0 V

GS(H)

2N/PN

SST

See Switching Circuit

d(off)

Turn-Off Time

Notes

2N/PN

SST

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NCB

b. Pulse test: PW v300 ꢁs duty cycle v3%.

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-3

2N/PN/SST4391 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

On-Resistance vs. Drain Current

100

200

160

r_DS@ I_D= 1 mA, V_GS= 0 V

= 25_C

I_DSS@ V_DS= 20 V, V_GS= 0 V

I_DSS

V_GS(off)= –2 V

r_DS

120

–4 V

–8 V

–2

–4

–6

–8

–10

I_D– Drain Current (mA)

100

V_GS(off)– Gate-Source Cutoff Voltage (V)

Turn-On Switching

On-Resistance vs. Temperature

200

160

t approximately independent of I_D

V_DD= 5 V, R_G= 50 W

V_GS(L)= –10 V

I_D= 1 mA

r_DSchanges X 0.7%/_C

120

d(on)

= –2 V

GS(off)

_D= 12 mA

–4 V

–8 V

d(on)

_D= 3 mA

–10

–55 –35 –15

25 45

85 105 125

–2

–4

–6

–8

– Temperature (_C)

V_GS(off)– Gate-Source Cutoff Voltage (V)

Turn-Off Switching

Capacitance vs. Gate-Source Voltage

independent of device V_GS(off)

V_DD= 5 V, V_GS(L)= –10 V

d(off)

f = 1 MHz

_DS= 0 V

V_GS(off)= –2 V

d(off)

C_iss

V_GS(off)= –8 V

C_rss

–4

–8

–12

–16

–20

I_D– Drain Current (mA)

V_GS– Gate-Source Voltage (V)

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-4

2N/PN/SST4391 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Forward Transconductance and Output onductance

vs. Gate-Source Cutoff Voltage*

Noise Voltage vs. Frequency

100

500

and g @ V = 20 V

os DS

V_DS= 10 V

= 0 V, f = 1 kHz

400

200

I_D= 1 mA

200

100

I_D= 10 mA

100

–2

–4

–6

–8

–10

100

1 k

10 k

100 k

f – Frequency (Hz)

V_GS(off)– Gate-Source Cutoff Voltage (V)

Gate Leakage Current

Common-Gate Input Admittance

10 nA

I_GSS@ 125_C

V_DG= 10 V

_D= 10 mA

= 25_C

= 10 mA

= 125_C

1 nA

1 mA

100 pA

10 pA

1 pA

1 mA

10 mA

@ 25_C

GSS

= 25_C

@ I

G(on)

0.1 pA

0.1

100

200

500

1000

V_DG– Drain-Gate Voltage (V)

f – Frequency (MHz)

Common-Gate Forward Admittance

Common-Gate Reverse Admittance

100

V_DG= 10 V

_D= 10 mA

= 25_C

V_DG= 10 V

_D= 10 mA

= 25_C

–g

–b

1.0

–g

0.1

0.01

0.1

100

200

500

1000

100

200

500

1000

f – Frequency (MHz)

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-5

2N/PN/SST4391 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Transconductance vs. Drain Current

Common-Gate Output Admittance

100

V_GS(off)= –2 V

V_DS= 10 V

f = 1 kHz

V_DG= 10 V

_D= 10 mA

= 25_C

= –55_C

25_C

125_C

0.1

1.0

100

200

500

1000

f – Frequency (MHz)

I_D– Drain Current (mA)

Output Characteristics

Transfer Characteristics

100

V_GS(off)= –4 V

V_DS= 20 V

= –55_C

V_GS= 0 V

25_C

–0.5 V

–1.0 V

–1.5 V

–2.0 V

125_C

–1

–2.5 V

–5

–2

–3

–4

_DS– Drain-Source Voltage (V)

_GS– Gate-Source Voltage (V)

V_DD

SWITCHING TIME TEST CIRCUIT

OUT

4391

4392

4393

V_GS(H)

–12 V

–7 V

–5 V

GS(L)

V_GS(L)

R *

800

ꢀ

1600

ꢀ

3000 ꢀ

1 kΩ

51 Ω

12 mA

6 mA

3 mA

D(on)

*Non-inductive

INPUT PULSE

SAMPLING SCOPE

Scope

Rise Time < 1 ns

Fall Time < 1 ns

Pulse Width 100 ns

PRF 1 MHz

Rise Time 0.4 ns

Input Resistance 10 M

Input Capacitance 1.5 pF

ꢀ

See Typical Characteristics curves for changes.

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-6

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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