RGF1G-E3 [VISHAY]
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode;型号: | RGF1G-E3 |
厂家: | VISHAY |
描述: | DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode 光电二极管 |
文件: | 总4页 (文件大小:339K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGF1A thru RGF1M
Vishay General Semiconductor
Surface Mount Glass Passivated Junction Fast
Switching Rectifier
®
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
VF
1.0 A
50 V to 1000 V
30 A
1.3 V
*
trr
150 ns, 250 ns, 500 ns
175 °C
d
e
t
n
e
Tj max.
t
a
P
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
DO-214BA (GF1)
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
Features
Mechanical Data
• Superectifier structure for high reliability
condition
Case: DO-214BA, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
• Patented glass-plastic encapsulation technique
• Ideal for automated placement
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Fast switching for high efficiency
• Low leakage current
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and Telecommunication
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Device marking code
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
RA
50
RB
RD
RG
RJ
RK
RM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
200
400
600
800
1000
V
V
V
A
35
50
70
140
200
280
400
1.0
420
600
560
800
700
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current
at TL = 120 °C
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
30
50
A
Max. full load reverse current, full cycle average
IR(AV)
µA
T
A = 55 °C
Operating junction and storage temperature range TJ,TSTG
- 65 to + 175
°C
Document Number 88697
10-Aug-05
www.vishay.com
1
RGF1A thru RGF1M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Maximum
Test condition
at 1.0 A
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
VF
1.3
V
instantaneous forward
voltage
Maximum DC reverse
current at rated DC
blocking voltage
T
A = 25 °C
IR
5.0
100
µA
TA = 125 °C
Typical reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
150
250
500
ns
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
8.5
pF
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Typical thermal resistance(1)
RθJA
RθJL
80
28
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
30
P. C. B. M o unted on
0.2 x 0.2” (5.0 x 5.0mm)
Copper Pad Areas
TJ = TJ max.
8.3 ms Single Half Sine-Wave
25
20
15
10
5
1
0.5
60 Hz
Resistive or
Inductive Load
0
100
0
110
120
130
140
150
160
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88697
10-Aug-05
RGF1A thru RGF1M
Vishay General Semiconductor
10
1
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
100
10
Mounted on
0.2 x 02.” (5.0 x 7mm)
Copper Pad Areas
TJ = 125 °C
1
TJ = 100 °C
0.1
1
TJ = 25 °C
0.01
0.1
0.01
0
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-214BA (GF1)
Cathode Band
Mounting Pad Layout
0.076 MAX.
(1.93 MAX.)
0.066 (1.68)
0.066 MIN.
(1.68 MIN.)
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.060 MIN.
(1.52 MIN.)
0.0065 (0.17)
0.108 (2.74)
0.098 (2.49)
0.118 (3.00)
0.100 (2.54)
0.220
(5.58) REF
0.114 (2.90)
0.094 (2.39)
0.006 (0.152) TYP.
0.060 (1.52)
0.030 (0.76)
0.226 (5.74)
0.196 (4.98)
Document Number 88697
10-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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