RGP02-16E/23 [VISHAY]

Rectifier Diode, 1 Element, 0.5A, 1600V V(RRM), Silicon, PLASTIC, GP10E, 2 PIN;


型号：	RGP02-16E/23
厂家：	VISHAY
描述：	Rectifier Diode, 1 Element, 0.5A, 1600V V(RRM), Silicon, PLASTIC, GP10E, 2 PIN
文件：	总3页 (文件大小：261K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RGP02-12E thru RGP02-20E

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

0.5 A

1200 V to 2000 V

20 A

300 ns

I_R

5.0 µA

DO-204AL (DO-41)

T_jmax.

175 °C

Features

Mechanical Data

• Superectifier structure for High Reliability

condition

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current, typical I less than 0.2 µA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

High voltage rectification of G2 Grid CRT and TV

Snubber circuit of camera flash

Snubber circuit of automotive ignition module

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbols RGP02-12E RGP02-14E RGP02-15E RGP02-16E RGP02-17E RGP02-18E RGP02-20E Units

Maximum repetitive peak

reverse voltage

V_RRM

1200

1400

1500

1600

1700

1800

2000

Maximum RMS voltage

V_RMS

V_DC

840

980

1050

1500

1120

1600

0.5

1190

1700

1260

1800

1400

2000

Maximum DC blocking voltage

1200

1400

Maximum average forward

rectified current 0.375" (9.5 mm)

lead length at T_A= 55 °C

I_F(AV)

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated

I_FSM

Operating junction and storage T_J, T_STG

temperature range

- 65 to + 175

°C

Document Number 88699

24-Nov-05

www.vishay.com

RGP02-12E thru RGP02-20E

Vishay General Semiconductor

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Maximum

Test condition

at 0.1 A

Symbols RGP02-12E RGP02-14E RGP02-15E RGP02-16E RGP02-17E RGP02-18E RGP02-20E Units

V_F

1.8

instantaneous

forward voltage

Maximum DC

reverse current

at rated DC

_A= 25 °C

I_R

5.0

µA

T_A= 125 °C

blockingvoltage

Maximum

reverse

recovery time at

I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

t_rr

300

Thermal Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Symbols RGP02-12E RGP02-14E RGP02-15E RGP02-16E RGP02-17E RGP02-18E RGP02-20E Units

Typical thermal resistance ⁽¹⁾

R_θJA

R_θJL

°C/W

Notes:

(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise specified)

0.5

0.4

0.3

0.2

0.1

Resistive or Inductive Load

TJ = TJ max.

8.3 ms Single Half Sine-Wave

0.375" (9.5 mm)Lead Length

100

125

150

175

Number of Cycles at 60 Hz

Ambient Temperature (°C)

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88699

24-Nov-05

RGP02-12E thru RGP02-20E

Vishay General Semiconductor

TJ = 25 °C

f = 1.0 MHz

V^sig= 50 mVp-p

0.1

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.01

0.001

0.8

1.0

1.2

1.4

1.6

1.8

2.2

2.4

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

TJ = 125 °C

T^J= 75 °C

0.1

T^J= 25 °C

0.01

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics

Package outline dimensions in inches (millimeters)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160 (4.1)

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

Document Number 88699

24-Nov-05

www.vishay.com

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