RGP10JE-E3/23 [VISHAY]
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN;
| 型号： | RGP10JE-E3/23 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN 二极管 |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGP10A thru RGP10M
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.0A
DO-204AL (DO-41)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
1.0 (25.4)
MIN.
• High temperature metallurgically bonded construction
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
• For use in high frequency rectifier circuits
• Fast switching for high efficiency
0.107 (2.7)
0.080 (2.0)
DIA.
Dimensions in
inches and
(millimeters)
0.205 (5.2)
0.160 (4.1)
• 1.0 Ampere operation at TA=55°C with no thermal runaway
• Typical IR less than 0.1µA
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
*Glass-plastic encap-
sulation technique is
covered by
®
Patent No. 3,996,602,
and brazed-lead
assembly by Patent
No. 3,930,306
Mechanical Data
Case: JEDEC DO-204AL molded plastic over glass body
1.0 (25.4)
MIN.
Terminals: Plated axial leads, solderable per
0.034 (0.86)
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
0.028 (0.71)
DIA.
0.026 (0.66)
0.023 (0.58)
Weight: 0.012 oz., 0.3 g
NOTE: Lead diameter is
for suffix "E" part numbers
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
RGP RGP
RGP RGP
RGP RGP
RGP
Parameter
Symbol 10A
10B
100
70
10D
200
140
200
10G
400
280
400
10J
600
420
600
10K
800
560
800
10M Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
1000
700
V
V
V
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current
IF(AV)
IFSM
IR(AV)
RΘJA
1.0
30
A
A
0.375" (9.5mm) lead length at TA=55°C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length TA=55°C
100
µA
Typical thermal resistance (NOTE 1)
55
°C/W
°C
Operating junction and storage temperature range TJ,TSTG
-65 to +175
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
RGP RGP
Symbol 10A 10B
RGP RGP
RGP RGP
RGP
10M Unit
Parameter
10D
10G
10J
10K
Maximum instantaneous forward voltage at 1.0A
VF
1.3
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=150°C
5.0
200
IR
µA
Maximum reverse recovery time
IF=0.5A, IR=1.0A, Irr=0.25A
trr
150
250
500
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
15
pF
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
Document Number 88700
28-Feb-02
www.vishay.com
1
RGP10A thru RGP10M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
30
20
10
0
1.0
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Resistive or Inductive Load
0.75
0.5
0.25
0.375" (9.5mm) Lead Length
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
20
10
10
1
TJ = 125°C
TJ = 75°C
TJ = 25°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
0.1
0.1
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Transient
Thermal Impedance
Fig. 5 – Typical Junction
Capacitance
100
100
10
1
T = 25°C
J
f = 1.0MHZ
Vsig = 50mVp-p
10
0.1
0.01
1
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88700
28-Feb-02
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