RGP30D/1 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,;
| 型号： | RGP30D/1 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, 二极管 |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGP30A thru RGP30M
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
Reverse Voltage 50 to 1000V
Forward Current 3.0A
DO-201AD
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
Dimensions in
inches and
(millimeters)
• High temperature metallurgically bonded construction
• 3.0 Ampere operation at TA=55°C with no thermal runaway
• Typical IR less < 0.2µA • Fast switching for high efficiency
0.375 (9.5)
0.285 (7.2)
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
*Glass-plastic encap-
sulation technique is
covered by
Patent No. 3,996,602,
and brazed-lead
assembly by Patent
No. 3,930,306
Mechanical Data
Case: JEDEC DO-201AD, molded plastic over glass body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
®
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Weight: 0.04 oz., 1.12 g
Packaging codes/options:
1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13" reel, 5.6K per box
23/1K per Ammo. mag., 9K per box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
RGP RGP RGP
RGP
30G
RGP RGP
RGP
30M
Parameter
Symbol 30A
30B
100
70
30D
200
140
200
30J
600
420
600
30K
800
560
800
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
400
280
400
1000
700
V
Maximum DC blocking voltage
100
1000
V
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA = 55°C
IF(AV)
3.0
125
100
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
A
Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length at TA = 55°C
Typical thermal resistance(1)
IR(AV)
RΘJA
µA
20
°C/W
°C
Operating junction and storage temperature range TJ,TSTG
–65 to +175
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 3.0A
VF
1.3
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
5.0
100
IR
µA
Maximum reverse recovery time
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
150
250
500
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
60
pF
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88704
18-Nov-02
www.vishay.com
1
RGP30A thru RGP30M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 — Forward Current
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current
Derating Curve
4.0
200
100
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Resistive or Inductive Load
3.0
2.0
1.0
0.375" (9.5mm) Lead Length
0
10
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 — Typical Instantaneous
Forward Characteristics
Fig. 4 — Typical Reverse
Characteristics
20
10
10
1
TJ = 125°C
TJ = 100°C
TJ = 75°C
TJ = 25°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
0.1
0.1
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 — Typical Junction
Capacitance
100
T
= 25°C
J
f = 1.0MHZ
Vsig = 50mVp-p
10
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88704
18-Nov-02
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