RS1JHE3_A/I [VISHAY]

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN;


型号：	RS1JHE3_A/I
厂家：	VISHAY
描述：	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN 光电二极管
文件：	总4页 (文件大小：90K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RS1A, RS1B, RS1D, RS1G, RS1J, RS1K

www.vishay.com

Vishay General Semiconductor

Surface Mount Fast Switching Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated pellet chip junction

• Fast switching for high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

DO-214AC (SMA)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer, automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

50 V, 100 V, 200 V, 400 V, 600 V,

800 V

V_RRM

MECHANICAL DATA

I_FSM

t_rr

30 A

150 ns, 250 ns, 500 ns

1.3 V

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3

RoHS-compliant, commercial grade

V_F

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

T_Jmax.

Package

Diode variation

150 °C

DO-214AC (SMA)

Single die

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL RS1A

RS1B

RS1D

RS1G

RS1J

RS1K

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

500

800

Maximum DC blocking voltage

Maximum average forward rectified current at T_L= 90 °C

100

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Revision: 23-Feb-16

Document Number: 88707

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RS1A, RS1B, RS1D, RS1G, RS1J, RS1K

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL RS1A

RS1B

RS1D

RS1G

RS1J

RS1K

UNIT

Maximum instantaneous

forward voltage

1.0 A

V_F

1.3

T_A= 25 °C

5.0

Maximum DC reverse current at

rated DC blocking voltage

I_R

μA

T_A= 125 °C

I_F= 0.5 A, I_R= 1.0 A,

Maximum reverse recovery time

Typical junction capacitance

t_rr

150

250

500

I_rr= 0.25 A

4.0 V, 1 MHz

C_J

7.0

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL RS1A

RS1B

RS1D

RS1G

RS1J

RS1K

UNIT

(1)

R_JA

105

Typical thermal resistance

°C/W

(1)

R_JL

Note

(1)

Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

RS1J-E3/61T

0.064

61T

5AT

1800

7500

1800

7500

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

RS1J-E3/5AT

0.064

RS1JHE3_A/H ⁽¹⁾

RS1JHE3_A/I ⁽¹⁾

0.064

Note

(1)

AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

1.2

1.0

0.8

0.6

0.4

0.2

T_L= 90 °C

8.3 ms Single Half Sine-Wave

Resistive or Inductive Load

P. C. B. M o unted on

0.2" x 0.2" (5.0 mm x 5.0 mm)

Copper Pad Areas

100

80 100 120 140 160 180

Number of Cycles at 60 Hz

Lead Temperature (°C)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Revision: 23-Feb-16

Document Number: 88707

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RS1A, RS1B, RS1D, RS1G, RS1J, RS1K

www.vishay.com

Vishay General Semiconductor

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_J= 125 °C

RS1A thru RS1G

T_J= 25 °C

RS1J thru RS1K

0.1

Pulse Width = 300 µs

1 % Duty Cycle

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 5 - Typical Junction Capacitance

100

T_J= 125 °C

T_J= 100 °C

0.1

T_J= 25 °C

Mounted on 0.2" x 0.2" (5 mm x 5 mm)

Copper Pad Area

0.01

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214AC (SMA)

Cathode Band

Mounting Pad Layout

0.074 (1.88)

MAX.

0.066 (1.68)

MIN.

0.110 (2.79)

0.100 (2.54)

0.065 (1.65)

0.049 (1.25)

0.177 (4.50)

0.157 (3.99)

0.060 (1.52)

MIN.

0.012 (0.305)

0.006 (0.152)

0.208 (5.28)

REF.

0.090 (2.29)

0.078 (1.98)

0.060 (1.52)

0.030 (0.76)

0.008 (0.203)

0 (0)

0.208 (5.28)

0.194 (4.93)

Revision: 23-Feb-16

Document Number: 88707

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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

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Revision: 08-Feb-17

Document Number: 91000

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