S1GA-E3/61T [VISHAY]
Rectifier Diode, 1 Element, 1A, 400V V(RRM),;![S1GA-E3/61T](http://pdffile.icpdf.com/pdf2/p00258/img/icpdf/S1GA-E3-61T_1561121_icpdf.jpg)
型号: | S1GA-E3/61T |
厂家: | ![]() |
描述: | Rectifier Diode, 1 Element, 1A, 400V V(RRM), 二极管 |
文件: | 总5页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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New Product
S1BA thru S1MA
Vishay General Semiconductor
Surface Mount Glass-Passivated Recitifiers
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
DO-214AC (SMA)
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power
supplies, inverters, converters, and freewheeling
diodes for consumer and telecommunication.
(Note: These devices are not Q101 qualified.)
PRIMARY CHARACTERISTICS
IF(AV)
1 A
VRRM
IFSM
100 V to 1000 V
30 A
IR
3.0 µA
MECHANICAL DATA
Case: DO-214AC (SMA)
VF at IF = 1.0 A
TJ max.
0.861 V
150 °C
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
S1BA
S1DA
DA
S1GA
GA
S1JA
JA
S1KA
KA
S1MA
MA
UNIT
Device marking code
BA
Maximum repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
100
200
400
600
800
1000
V
A
1.0
30
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number: 88968
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
S1BA thru S1MA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 1.0 A
IF = 1.0 A
TJ = 25 °C
TJ = 125 °C
0.960
0.861
1.1
-
Instantaneous forward voltage (1)
VF
V
TJ = 25 °C
TJ = 125 °C
0.09
20
3
80
Reverse current (2)
rated VR
IR
µA
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical reverse recovery time
Typical junction capacitance
trr
1.0
8
-
-
µs
pF
4.0 V, 1 MHz
CJ
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
S1BA
S1DA
S1GA
S1JA
S1KA
S1MA
UNIT
RθJA
RθJL
95
22
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1JA-E3/61T
0.064
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
S1JA-E3/5AT
0.064
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
1.50
1.25
1.2
1.0
0.8
0.6
0.4
0.2
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
Lead temperature
1.00
0.75
0.50
0.25
0
D = 1.0
D = 0.1
Ambient temperature
T
Resistive or Inductive Load
P. C. B. M o unted on 0.2 x 0.2"
(5.0 x 5.0 mm) Copper Pad Areas
D = tp/T
tp
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
0
0.2
Average Forward Current (A)
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88968
Revision: 26-May-08
New Product
S1BA thru S1MA
Vishay General Semiconductor
35
30
25
20
15
10
5
100
10
1
0.1
0
1
10
1
10
100
100
Number of Cycles at 50 Hz
Reverse Voltage (V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 6. Typical Junction Capacitance
100
100
10
1
Junction to Ambient
TJ = 150 °C
TJ = 125 °C
10
TJ = 25 °C
1
0.1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.01
0.1
1
10
100
1000
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 7. Typical Transient Thermal Impedance
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Leakage Characteristics
Document Number: 88968
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
S1BA thru S1MA
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
0.012 (0.305)
0.006 (0.152)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88968
Revision: 26-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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S1GB-G
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
SENSITRON
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