S505TY [VISHAY]
暂无描述;型号: | S505TY |
厂家: | VISHAY |
描述: | 暂无描述 电视 |
文件: | 总5页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
S505T/S505TR/S505TRW
Vishay Telefunken
MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
RFC
C block
C block
V
DD
AGC
D
G2
G1
RF out
RF in
C block
S
13650
RG1
V
DD
Features
Easy Gate 1 switch-off with PNP switching
transistors inside PLL
Low noise figure
High gain
High AGC-range with less steep slope
Integrated gate protection diodes
Improved cross modulation at gain reduction
SMD package
2
1
1
2
13 579
94 9279
94 9278
95 10831
4
3
3
4
S505T Marking: 505
S505TR Marking: 55R
Plastic case (SOT 143)
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
S505TRW Marking: W05
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85044
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
S505T/S505TR/S505TRW
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Test Conditions
Symbol
Value
8
Unit
V
V
DS
Drain current
I
30
10
6
200
150
mA
mA
V
mW
C
D
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
±I
±V
G1/G2SM
G1/G2SM
T
amb
≤ 60 C
P
tot
T
Ch
Storage temperature range
T
stg
–55 to +150
C
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
3
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35 m Cu
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min Typ Max Unit
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
I = 10 A, V
= V
= 0
V
15
V
D
G2S
G1S
(BR)DSS
(BR)G1SS
(BR)G2SS
±I
G1S
±I
G2S
= 10 mA, V
= 10 mA, V
= V = 0
±V
±V
7
10
10
20
20
V
G2S
G1S
DS
= V = 0
7
V
DS
+V
= 5 V, V
= V = 0
+I
nA
nA
G1S
G2S
DS
G1SS
G2SS
DSO
±V
= 5 V, V
= V = 0
±I
G2S
G1S
DS
V
DS
V
DS
V
DS
= V
= 5 V, V
= 4 V, R = 220 k
I
10
13
18 mA
RG1
G2S
G1
= 5 V, V
= 4, I = 20 A
V
V
0.4
1.2
V
V
G2S
D
G1S(OFF)
G2S(OFF)
= V
= 5 V, R = 220 k , I = 20 A
1.0
RG1
G1
D
Remark on improving intermodulation behavior:
By setting R smaller than 220 k , e.g., 180 k , typical value of I
will raise and improved intermodulation
G1
DSO
behavior will be performed.
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85044
Rev. 3, 20-Jan-99
2 (5)
S505T/S505TR/S505TRW
Vishay Telefunken
Electrical AC Characteristics
V
DS
= 5 V, V
= 4 V, I = 13 mA, f = 1 MHz , T = 25 C, unless otherwise specified
amb
G2S
D
Parameter
Test Conditions
Symbol Min Typ Max Unit
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
y
28
35 mS
2.3 2.7 pF
21s
C
issg1
C
C
G
G
G
ps
25
1.1
28
21
fF
rss
pF
dB
dB
dB
dB
dB
oss
G = 2 mS, G = 0.5 mS, f = 200 MHz
S
L
ps
G = 3,3 mS, G = 1 mS, f = 800 MHz
17
45
S
L
ps
AGC range
Noise figure
V
DS
= 5 V, V
= 1 to 4 V, f = 800 MHz
G2S
G = 2 mS, G = 0.5 mS, f = 200 MHz
F
F
1
1.3
S
L
G = 3,3 mS, G = 1 mS, f = 800 MHz
S
L
Dimensions of S505T in mm
96 12240
Document Number 85044
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
S505T/S505TR/S505TRW
Vishay Telefunken
Dimensions of S505TR in mm
96 12239
Dimensions of S505TRW in mm
96 12238
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85044
Rev. 3, 20-Jan-99
4 (5)
S505T/S505TR/S505TRW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85044
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
5 (5)
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