S505TY [VISHAY]

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S505TY
型号: S505TY
厂家: VISHAY    VISHAY
描述:

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S505T/S505TR/S505TRW  
Vishay Telefunken  
MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage  
MOSMIC - MOS Monolithic Integrated Circuit  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
Low noise gain controlled input stages in UHF-and  
VHF- tuner with 5 V supply voltage.  
RFC  
C block  
C block  
V
DD  
AGC  
D
G2  
G1  
RF out  
RF in  
C block  
S
13650  
RG1  
V
DD  
Features  
Easy Gate 1 switch-off with PNP switching  
transistors inside PLL  
Low noise figure  
High gain  
High AGC-range with less steep slope  
Integrated gate protection diodes  
Improved cross modulation at gain reduction  
SMD package  
2
1
1
2
13 579  
94 9279  
94 9278  
95 10831  
4
3
3
4
S505T Marking: 505  
S505TR Marking: 55R  
Plastic case (SOT 143)  
Plastic case (SOT 143R)  
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1  
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1  
1
2
13 654  
13 566  
4
3
S505TRW Marking: W05  
Plastic case (SOT 343R)  
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1  
Document Number 85044  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  
S505T/S505TR/S505TRW  
Vishay Telefunken  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Drain - source voltage  
Test Conditions  
Symbol  
Value  
8
Unit  
V
V
DS  
Drain current  
I
30  
10  
6
200  
150  
mA  
mA  
V
mW  
C
D
Gate 1/Gate 2 - source peak current  
Gate 1/Gate 2 - source voltage  
Total power dissipation  
Channel temperature  
±I  
±V  
G1/G2SM  
G1/G2SM  
T
amb  
60 C  
P
tot  
T
Ch  
Storage temperature range  
T
stg  
–55 to +150  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thChA  
Value  
450  
Unit  
K/W  
3
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm  
plated with 35 m Cu  
Electrical DC Characteristics  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
Min Typ Max Unit  
Drain - source  
breakdown voltage  
Gate 1 - source  
breakdown voltage  
Gate 2 - source  
breakdown voltage  
Gate 1 - source  
leakage current  
Gate 2 - source  
leakage current  
Drain - source  
operating current  
Gate 1 - source  
cut-off voltage  
Gate 2 - source  
cut-off voltage  
I = 10 A, V  
= V  
= 0  
V
15  
V
D
G2S  
G1S  
(BR)DSS  
(BR)G1SS  
(BR)G2SS  
±I  
G1S  
±I  
G2S  
= 10 mA, V  
= 10 mA, V  
= V = 0  
±V  
±V  
7
10  
10  
20  
20  
V
G2S  
G1S  
DS  
= V = 0  
7
V
DS  
+V  
= 5 V, V  
= V = 0  
+I  
nA  
nA  
G1S  
G2S  
DS  
G1SS  
G2SS  
DSO  
±V  
= 5 V, V  
= V = 0  
±I  
G2S  
G1S  
DS  
V
DS  
V
DS  
V
DS  
= V  
= 5 V, V  
= 4 V, R = 220 k  
I
10  
13  
18 mA  
RG1  
G2S  
G1  
= 5 V, V  
= 4, I = 20 A  
V
V
0.4  
1.2  
V
V
G2S  
D
G1S(OFF)  
G2S(OFF)  
= V  
= 5 V, R = 220 k , I = 20 A  
1.0  
RG1  
G1  
D
Remark on improving intermodulation behavior:  
By setting R smaller than 220 k , e.g., 180 k , typical value of I  
will raise and improved intermodulation  
G1  
DSO  
behavior will be performed.  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85044  
Rev. 3, 20-Jan-99  
2 (5)  
S505T/S505TR/S505TRW  
Vishay Telefunken  
Electrical AC Characteristics  
V
DS  
= 5 V, V  
= 4 V, I = 13 mA, f = 1 MHz , T = 25 C, unless otherwise specified  
amb  
G2S  
D
Parameter  
Test Conditions  
Symbol Min Typ Max Unit  
Forward transadmittance  
Gate 1 input capacitance  
Feedback capacitance  
Output capacitance  
Power gain  
y
28  
35 mS  
2.3 2.7 pF  
21s  
C
issg1  
C
C
G
G
G
ps  
25  
1.1  
28  
21  
fF  
rss  
pF  
dB  
dB  
dB  
dB  
dB  
oss  
G = 2 mS, G = 0.5 mS, f = 200 MHz  
S
L
ps  
G = 3,3 mS, G = 1 mS, f = 800 MHz  
17  
45  
S
L
ps  
AGC range  
Noise figure  
V
DS  
= 5 V, V  
= 1 to 4 V, f = 800 MHz  
G2S  
G = 2 mS, G = 0.5 mS, f = 200 MHz  
F
F
1
1.3  
S
L
G = 3,3 mS, G = 1 mS, f = 800 MHz  
S
L
Dimensions of S505T in mm  
96 12240  
Document Number 85044  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
3 (5)  
S505T/S505TR/S505TRW  
Vishay Telefunken  
Dimensions of S505TR in mm  
96 12239  
Dimensions of S505TRW in mm  
96 12238  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85044  
Rev. 3, 20-Jan-99  
4 (5)  
S505T/S505TR/S505TRW  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as their  
impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85044  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
5 (5)  

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