S595TR [VISHAY]
MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage; MOSMIC的电视调谐器预安排与5 V电源电压
| 型号： | S595TR |
| 厂家： | 
VISHAY |
| 描述： | MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage |
| 文件： | 总9页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S595T/S595TR/S595TRW
Vishay Telefunken
MOSMIC for TV–Tuner Prestage with 5 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
RFC
C block
V
DD
AGC
RF in
D
G2
G1
RF out
C block
S
C block
94 9296
Features
Integrated gate protection diodes
Low noise figure
Improved cross modulation at gain reduction
High AGC-range
High gain
SMD package
Biasing network on chip
2
1
1
2
13 579
94 9279
94 9278
95 10831
4
3
3
4
S595T Marking: 595
S595TR Marking: 59R
Plastic case (SOT 143)
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
S595TRW Marking: W59
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85049
Rev. 4, 20-Jan-99
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1 (9)
S595T/S595TR/S595TRW
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Test Conditions
Symbol
Value
8
Unit
V
V
DS
Drain current
I
30
10
6
200
150
mA
mA
V
mW
C
D
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
±I
±V
G1/G2SM
G1/G2SM
T
amb
≤ 60 C
P
tot
T
Ch
Storage temperature range
T
stg
–55 to +150
C
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
3
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35 m Cu
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min Typ Max Unit
Gate 1 - source
breakdown voltage
Gate 2 - source
±I
±I
= 10 mA, V
= V = 0
±V
7
10
V
G1S
G2S
DS
(BR)G1SS
±V
(BR)G2SS
= 10 mA, V
= V = 0
7
10
V
G2S
G1S
DS
breakdown voltage
Gate 1 - source
leakage current
+V
–V
±V
= 5 V, V
= 5 V, V
= 5 V, V
= V = 0
+I
G1SS
–I
G1SS
±I
G2SS
50
100
20
A
A
nA
G1S
G1S
G2S
G2S
DS
= V = 0
G2S
DS
Gate 2 - source
leakage current
= V = 0
G1S
DS
Drain current
Self-biased
V
V
= 5 V, V
= 5 V, V
= 0, V
= nc, V
= 4 V
= 4 V
G2S
I
I
50
9
500
18 mA
A
DS
G1S
G1S
G2S
DSS
13
DS
DSP
operating current
Gate 2 - source
cut-off voltage
V
DS
= 5 V, V
= nc, I = 20 A
V
G2S(OFF)
1.0
V
G1S
D
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
< 0.7 V is feasible.
G1S
Using open collector switching transistor (inside of PLL), insert 10 k collector resistor.
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Document Number 85049
Rev. 4, 20-Jan-99
2 (9)
S595T/S595TR/S595TRW
Vishay Telefunken
Electrical AC Characteristics
V
DS
= 5 V, V
= 4 V, f = 1 MHz , T
= 25 C, unless otherwise specified
G2S
amb
Parameter
Test Conditions
Symbol Min Typ Max Unit
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
y
28
30
35 mS
21s
C
issg1
2.3 2.7 pF
C
C
G
G
G
ps
25
1.1
28
21
fF
rss
pF
dB
dB
dB
dB
dB
oss
G = 2 mS, G = 0.5 mS, f = 200 MHz
S
L
ps
ps
G = 3,3 mS, G = 1 mS, f = 800 MHz
17
45
S
L
AGC range
Noise figure
V
DS
= 5 V, V
= 1 to 4 V, f = 800 MHz
G2S
G = 2 mS, G = 0.5 mS, f = 200 MHz
F
F
1
1.3
S
L
G = 3,3 mS, G = 1 mS, f = 800 MHz
S
L
Common Source S–Parameters
V
DS
= 5 V , V
= 4 V , Z0 = 50
T
amb
= 25 C, unless otherwise specified
G2S
S11
S21
S12
S22
LOG
MAG
dB
–0.01
LOG
MAG
dB
LOG
MAG
dB
LOG
MAG
dB
–0.08
f/MHz
ANG
deg
ANG
deg
ANG
deg
ANG
deg
–2.1
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
–4.6
–9.2
9.61
174.3
–63.13
–56.88
–53.46
–51.38
–49.76
–48.70
–47.92
–47.45
–47.23
–47.10
–47.22
–46.92
–46.68
–46.47
–46.45
–45.89
–44.77
–43.51
–41.91
–40.66
–39.81
–38.89
–37.91
–36.76
–35.65
–34.63
88.0
85.3
82.8
80.7
78.3
77.3
76.4
76.2
76.7
78.4
82.3
88.6
92.6
–0.03
–0.11
–0.19
–0.28
–0.40
–0.51
–0.64
–0.78
–0.93
–1.07
–1.22
–1.36
–1.49
–1.65
–1.79
–1.94
–2.04
–2.17
–2.29
–2.42
–2.58
–2.70
–2.78
–2.89
–3.00
9.56
9.44
9.30
9.15
9.00
8.79
8.62
8.35
8.17
7.94
7.71
7.50
7.26
7.08
6.86
6.68
6.44
6.27
6.09
5.93
5.67
5.55
5.41
5.38
5.17
167.9
161.3
155.1
148.4
142.7
136.8
130.7
125.3
119.7
114.2
108.7
104.1
99.1
94.1
89.2
84.5
79.3
74.4
70.4
65.8
61.1
–0.10
–0.14
–0.16
–0.22
–0.26
–0.30
–0.38
–0.43
–0.49
–0.55
–0.60
–0.66
–0.70
–0.73
–0.78
–0.80
–0.85
–0.87
–0.89
–0.90
–0.92
–0.93
–0.94
–0.93
–0.92
–4.3
–6.4
–8.6
–13.8
–18.1
–22.6
–26.8
–31.1
–35.2
–39.3
–43.2
–47.1
–50.8
–54.4
–58.2
–61.5
–65.2
–68.6
–72.0
–75.3
–78.7
–82.2
–85.2
–88.4
–91.6
–94.8
–97.7
–11.0
–12.9
–15.1
–17.1
–18.8
–20.6
–22.6
–24.6
–26.1
–27.9
–29.8
–31.7
–33.4
–35.4
–37.2
–39.1
–41.1
–42.6
–44.6
–46.7
–49.1
–51.0
98.8
107.2
116.7
125.9
133.0
137.1
138.5
140.6
143.6
145.8
148.3
149.7
150.1
56.1
51.8
47.1
42.0
Document Number 85049
Rev. 4, 20-Jan-99
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S595T/S595TR/S595TRW
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
250
200
150
40
30
20
10
0
V
=5V
DS
f=200MHz
100
50
0
150
0
25
50
75
100
125
0
1
2
3
4
95 10759
T
amb
– Ambient Temperature ( °C )
95 11159
V
– Gate 2 Source Voltage ( V )
G2S
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Forward Transadmittance vs.
Gate 2 Source Voltage
20
16
12
4.0
V
=5V
DS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
f=200MHz
V
=4V
G2S
3V
8
4
0
2V
1V
1.5V
5
0
1
2
3
4
5
0
1
2
3
4
13634
V
– Gate 2 Source Voltage ( V )
G2S
95 11157
V
– Drain Source Voltage ( V )
DS
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs.
Gate 2 Source Voltage
20
2.0
1.5
1.0
0.5
0
V
=4V
DS
V
=5V
DS
f=200MHz
16
12
8
4
0
3
4
5
6
7
0
1
2
3
4
13635
V
– Drain Source Voltage ( V )
DS
95 11158
V
– Gate 2 Source Voltage ( V )
G2S
Figure 3. Drain Current vs. Gate 2 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
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Document Number 85049
Rev. 4, 20-Jan-99
4 (9)
S595T/S595TR/S595TRW
Vishay Telefunken
20
10
80
V
=5V
DS
V
=5V
70
60
50
40
30
20
10
0
DS
f=800MHz
P =–20dBm
in
f=800MHz
0
–10
–20
–30
–40
–50
–60
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
2
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
13636
V
– Gate 2 Source Voltage ( V )
13637
V
– Gate 2 Source Voltage ( V )
G2S
G2S
Figure 7. Transducer Gain vs. Gate 2 Source Voltage
Figure 8. Cross Modulation vs. Gate 2 Source Voltage
Document Number 85049
Rev. 4, 20-Jan-99
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S595T/S595TR/S595TRW
Vishay Telefunken
VDS = 5 V, VG2S = 4 V , Z0 = 50
S11
S12
j
90°
120°
60°
j0.5
j2
1300MHz
30°
j0.2
j5
1050
800 550
300
0
0.2
0.5
1
2
5
180°
50
0.008
0.016
0°
50
–j0.2
–j5
300
–j2
550
–150°
–30°
1300MHz
1050 800
–j0.5
–120°
–60°
12 944
–j
–90°
12 945
Figure 9. Input reflection coefficient
Figure 11. Reverse transmission coefficient
S21
S22
j
90°
550
800
60°
1050
j0.5
j2
300
30°
j0.2
j5
1300MHz
50
180°
1.0
2.0
0°
0
0.2
0.5
1
2
5
50
300
550
800
1050
–j0.2
–j5
–150°
–30°
1300MHz
–j0.5
–j2
–120°
–60°
12 947
–j
–90°
12 946
Figure 10. Forward transmission coefficient
Figure 12. Output reflection coefficient
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Document Number 85049
Rev. 4, 20-Jan-99
6 (9)
S595T/S595TR/S595TRW
Vishay Telefunken
Dimensions of S595T in mm
96 12240
Dimensions of S595TR in mm
96 12239
Document Number 85049
Rev. 4, 20-Jan-99
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7 (9)
S595T/S595TR/S595TRW
Vishay Telefunken
Dimensions of S595TRW in mm
96 12238
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Document Number 85049
Rev. 4, 20-Jan-99
8 (9)
S595T/S595TR/S595TRW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85049
Rev. 4, 20-Jan-99
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