S5G-M3 [VISHAY]

Surface Mount Glass Passivated Rectifier;


型号：	S5G-M3
厂家：	VISHAY
描述：	Surface Mount Glass Passivated Rectifier
文件：	总4页 (文件大小：88K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

S5A-M3, S5B-M3, S5D-M3, S5G-M3, S5J-M3, S5K-M3, S5M-M3

www.vishay.com

Vishay General Semiconductor

Surface Mount Glass Passivated Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated pellet chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AB (SMC)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

5.0 A

MECHANICAL DATA

Case: DO-214AB (SMC)

Molding compound meets UL 94 V-0 flammability rating

50V,100V,200V,400V,600V,

800 V, 1000 V

V_RRM

I_FSM

I_R

100 A

10 μA

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

V_F

1.15 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

Package

Diode variations

150 °C

DO-214AB (SMC)

Single die

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

S5A

S5B

S5D

S5G

S5J

S5K

S5M UNIT

Device marking code

Max. repetitive peak reverse voltage

Max. RMS voltage

V_RRM

V_RMS

100

200

140

200

400

280

600

420

600

800

560

800

1000

700

Max. DC blocking voltage

V_DC

100

400

5.0

1000

Max. average forward rectified current at T_L= 75 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

100

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Revision: 19-Feb-16

Document Number: 89921

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

S5A-M3, S5B-M3, S5D-M3, S5G-M3, S5J-M3, S5K-M3, S5M-M3

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL S5A

S5B

S5D

S5G

S5J

S5K

S5M UNIT

Max. instantaneous

forward voltage

5.0 A

V_F

1.15

T_A= 25 °C

Max. DC reverse current at rated

DC blocking voltage

I_R

μA

T_A= 125 °C

250

I_F= 0.5 A, I_R= 1.0 A,

Typical reverse recovery time

Typical junction capacitance

t_rr

2.5

μs

I_rr= 0.25 A

4.0 V, 1 MHz

C_J

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL S5A

S5B

S5D

S5G

S5J

S5K

S5M UNIT

Typical thermal resistance ⁽¹⁾

R_JL

°C/W

Note

(1)

Thermal resistance from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

S5J-M3/57T

0.211

57T

9AT

850

7" diameter plastic tape and reel

13" diameter plastic tape and reel

S5J-M3/9AT

0.211

3500

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

1000

100

T_L= 75 °C

8.3 ms Single Half Sine-Wave

100

125

150

100

Lead Temperature (°C)

Number of Cycles at 60 Hz

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current

Revision: 19-Feb-16

Document Number: 89921

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

S5A-M3, S5B-M3, S5D-M3, S5G-M3, S5J-M3, S5K-M3, S5M-M3

www.vishay.com

Vishay General Semiconductor

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_J= 150 °C

T_J= 125 °C

T_J= 25 °C

0.1

Pulse Width = 300 µs

1 % Duty Cycle

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 5 - Typical Junction Capacitance



1000

T_J= 150 °C

100

T_J= 125 °C

T_J= 25 °C

0.1

0.01

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214AB (SMC)

Cathode Band

Mounting Pad Layout

0.185 (4.69) MAX.

0.246 (6.22)

0.220 (5.59)

0.126 (3.20)

0.114 (2.90)

0.126 (3.20) MIN.

0.060 (1.52) MIN.

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.320 (8.13) REF.

0.103 (2.62)

0.079 (2.06)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

Revision: 19-Feb-16

Document Number: 89921

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com

Vishay

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

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Revision: 08-Feb-17

Document Number: 91000

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