S852TW [VISHAY]

Silicon NPN Planar RF Transistor; 硅NPN平面RF晶体管


型号：	S852TW
厂家：	VISHAY
描述：	Silicon NPN Planar RF Transistor 硅NPN平面RF晶体管晶体晶体管
文件：	总7页 (文件大小：122K)
中文：	中文翻译
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S852T/S852TW

Vishay Telefunken

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For low noise and high gain broadband amplifiers at

collector currents from 0.2 mA to 5 mA.

Features

Low supply voltage

Low noise figure

High power gain

Low current consumption

50 input impedance at 945 MHz

13 652

13 570

13 581

94 9280

S852T Marking: 852

S852TW Marking: W52

Plastic case (SOT 323)

1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

CBO

CEO

EBO

≤ 125 C

tot

150

–65 to +150

amb

stg

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thJA

Value

450

Unit

K/W

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85052

Rev. 3, 20-Jan-99

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Electrical DC Characteristics

amb

= 25 C, unless otherwise specified

Parameter

Collector cut-off current

Collector-base cut-off current

Emitter-base cut-off current

Test Conditions

= 12 V, V = 0

Symbol Min Typ Max Unit

100

CES

= 8 V, I = 0

100 nA

CBO

= 1 V, I = 0

EBO

Collector-emitter breakdown voltage I = 1 mA, I = 0

(BR)CEO

Collector-emitter saturation voltage I = 5 mA, I = 0.5 mA

CEsat

0.1 0.4

90 150

DC forward current transfer ratio

= 3 V, I = 1 mA

Electrical AC Characteristics

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min Typ Max Unit

Transition frequency

= 3 V, I = 1 mA, f = 500 MHz

4.7

5.2

0.25

1.1

GHz

= 2 V, I = 1.5 mA, f = 500 MHz

Collector-base capacitance

Noise figure

= 1 V, f = 1 MHz

Z = Z

, f = 450 MHz, V = 2 V,

Sopt

opt

I = 0.5 mA

Z = Z

, f = 945 MHz, V = 3 V,

1.8

Sopt

opt

I = 1 mA

Z = Z

, f = 945 MHz, V = 2 V,

Sopt

I = 1.5 mA

Power gain

= 2 V, I = 0.5 mA, f = 450MHz

11.5

10.5

opt

= 3 V, I = 1 mA, f = 945 MHz

= 2 V, I = 1.5 mA, f = 945 MHz

Collector current for f max

Real part of input

impedance

= 2 V, f = 500 MHz

= 3 V, I = 1 mA, f = 945 MHz

(h11e)

= 2 V, I = 1.5 mA, f = 945 MHz

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Common Emitter S–Parameters

Z₀= 50

amb

= 25 C, unless otherwise specified

S11

LIN

MAG

S21

S12

S22

LIN

MAG

LIN

MAG

LIN

MAG

V /V

I /mA

f/MHz

ANG

deg

ANG

deg

ANG

deg

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

9.976

0.969

0.955

0.939

0.920

0.901

0.881

0.861

0.838

0.818

0.793

0.772

0.746

0.972

0.898

0.858

0.811

0.762

0.710

0.662

0.617

0.576

0.540

0.502

0.470

0.439

–3.8

1.71

174.9

168.9

163.3

157.7

151.9

147.2

142.2

137.6

133.1

129.4

125.1

121.3

117.2

170.9

161.7

153.1

145.1

137.8

131.3

125.3

120.0

115.1

110.7

106.5

102.8

99.0

0.015

0.029

0.044

0.058

0.070

0.082

0.093

0.104

0.114

0.121

0.130

0.138

0.148

0.016

0.031

0.045

0.057

0.067

0.077

0.085

0.093

0.099

0.106

0.113

0.118

0.123

86.8

0.998

0.993

0.984

0.974

0.959

0.948

0.935

0.922

0.909

0.898

0.884

0.873

0.859

0.990

0.972

0.944

0.913

0.880

0.849

0.820

0.796

0.775

0.756

0.740

0.724

0.710

–2.3

–4.7

–6.7

–7.9

–11.7

–15.5

–18.9

–22.4

–25.8

–28.9

–32.3

–35.4

–38.8

–41.5

–45.1

–7.5

–14.5

–21.0

–27.0

–32.2

–36.8

–40.3

–43.8

–46.9

–50.0

–52.4

–54.8

–57.6

1.71

1.70

1.68

1.64

1.62

1.58

1.56

1.53

1.50

1.49

1.46

1.44

4.84

4.69

4.49

4.27

4.01

3.77

3.55

3.33

3.15

2.98

2.82

2.69

2.56

83.4

80.0

76.8

73.6

71.5

69.0

66.7

65.0

63.5

61.8

60.4

58.6

84.8

79.8

75.1

71.5

68.3

65.9

63.6

62.1

61.2

60.3

59.5

59.3

58.7

–8.7

–10.6

–12.4

–13.9

–15.5

–17.2

–18.6

–19.7

–21.3

–22.6

–3.9

0.5

–7.4

–10.6

–13.1

–15.3

–16.8

–17.8

–18.7

–19.5

–20.3

–20.8

–21.4

–21.7

1.5

Document Number 85052

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Typical Characteristics (T_amb= 25 C unless otherwise specified)

0.5

0.4

0.3

0.2

0.1

100

125

150

13619

amb

– Ambient Temperature ( °C )

13622

– Collector Base Voltage ( V )

Figure 3. Collector Base Capacitance vs.

Collector Base Voltage

Figure 1. Total Power Dissipation vs.

Ambient Temperature

7000

6000

5000

4000

3000

2000

1000

f=500MHz

=1V

13620

I – Collector Current ( mA )

Figure 2. Transition Frequency vs. Collector Current

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Document Number 85052

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V_CE= 2 V, I_C= 1.5 mA , Z₀= 50

S₁₁

S₁₂

90°

1300MHz

120°

900

j0.5

500

150°

30°

j0.2

100

0.2

0.5

180°

0.04

0.08

0°

100

1300MHz

900

–j0.2

–j5

500

–j2

–150°

–30°

–j0.5

–120°

–60°

13 562

–j

–90°

13 563

Figure 4. Input reflection coefficient

Figure 6. Reverse transmission coefficient

S₂₁

S₂₂

90°

120°

60°

j0.5

900

500

150°

30°

j0.2

1300MHz

100

180°

0°

0.2

0.5

100

1300MHz

–j0.2

–j5

–150°

–30°

–j0.5

–j2

–120°

–60°

13 565

–j

–90°

13 564

Figure 5. Forward transmission coefficient

Figure 7. Output reflection coefficient

Document Number 85052

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Dimensions of S852T in mm

95 11346

Dimensions of S852TW in mm

96 12236

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 85052

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