SA60BA60 [VISHAY]
Single Phase Fast Recovery Bridge (Power Modules), 60 A; 单相快速恢复大桥（功率模块） ， 60 A
| 型号： | SA60BA60 |
| 厂家： | 
VISHAY |
| 描述： | Single Phase Fast Recovery Bridge (Power Modules), 60 A |
| 文件： | 总8页 (文件大小：1001K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SA60BA60
Vishay Semiconductors
Single Phase Fast Recovery Bridge (Power Modules), 60 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Simplified mechanical designs, rapid assembly
• UL pending
• Excellent power/volume ratio
SOT-227
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial and consumer level
PRODUCT SUMMARY
DESCRIPTION
IT(AV)
60 A
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
Type
Modules - Bridge, Fast
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
60
UNITS
A
IO
TC
59
°C
50 Hz
60 Hz
50 Hz
60 Hz
300
IFSM
A
310
442
I2t
A2s
402
VRRM
TJ
600
V
- 55 to 150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM MAXIMUM
VOLTAGE
TYPE NUMBER
AT TJ MAXIMUM
CODE
SA60BA60
60
600
700
5
Document Number: 93050
Revision: 10-May-11
For technical questions within your region, please contact one of the following:
indmodules@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA60BA60
Vishay Semiconductors
Single Phase Fast Recovery Bridge
(Power Modules), 60 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
IO
TEST CONDITIONS
VALUES
60
UNITS
A
Resistive or inductive load
Maximum DC output current
at case temperature
59
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
300
No voltage
reapplied
310
Maximum peak, one-cycle
non-repetitive forward current
IFSM
A
250
100 % VRRM
reapplied
260
Initial TJ =
TJ maximum
442
No voltage
reapplied
402
Maximum I2t for fusing
I2t
A2s
313
100 % VRRM
reapplied
284
Maximum I2t for fusing
Value of threshold voltage
Forward slope resistance
I2t
VF(TO)
rt
I2t for time tx = I2t x tx0.1 tx 10 ms, VRRM = 0 V
4.4
kA2s
V
0.914
10.5
1.33
1.23
3000
TJ maximum
m
TJ = 25 °C, IFM = 30 Apk
tp = 400 μs
Maximum forward voltage drop
RMS isolation voltage base plate
VFM
VINS
TJ = TJ maximum, IFM = 30 Apk
V
f = 50 Hz, t = 1 s
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = 25 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
160
Reverse recovery time
trr
ns
TJ = 125 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
250
10
TJ = 25 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
IFM
trr
Reverse recovery current
Irr
A
TJ = 125 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
t
15
dIR
dt
Qrr
TJ = 25 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
IRM(REC)
1.20
Reverse recovery charge
Snap factor, typical
Qrr
S
nC
-
TJ = 125 °C, IF = 20 A, VR = 30 V,
dIF/dt = 100 A/μs
2.90
0.6
TJ = 25 °C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction and storage
temperature range
TJ, TStg
- 55 to 150
0.30
°C
Maximum thermal resistance
junction to case per bridge
RthJC
RthCS
°C/W
Typical thermal resistance,
case to heatsink per module
Mounting surface, smooth, flat and greased
Bridge to heatsink
0.05
Approximate weight
Mounting torque 10 %
Case style
30
g
1.3
Nm
SOT-227
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2
For technical questions within your region, please contact one of the following:
indmodules@vishay.com
Document Number: 93050
Revision: 10-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA60BA60
Vishay Semiconductors
Single Phase Fast Recovery Bridge
(Power Modules), 60 A
150
140
130
120
110
1000
100
10
180˚
(Rect)
T
T
= 150˚C
100
90
80
70
60
50
40
J
J
=
25˚C
180˚
(Sine)
0
10
20
30
40
50
60
70
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
220
200
180
160
140
120
100
80
180˚
(Sine)
180˚
(Rect)
60
40
20
1
0
1
2
3
4
5
6
7
0
0
10
20
30
40
50
60
Forward Voltage Drop-VF (V)
Average Forward Current - IF(AV) (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
P
DM
t
1
D = 0.02
D = 0.01
0.1
t
2
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1,Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Document Number: 93050
Revision: 10-May-11
For technical questions within your region, please contact one of the following:
indmodules@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA60BA60
Vishay Semiconductors
Single Phase Fast Recovery Bridge
(Power Modules), 60 A
0.2
100
Tj = 150 °C
Tj = 25 ˚C
I fm = 30 A
0.15
Ifm = 30 A
80
60
40
20
0
20 A
10 A
20 A
0.1
5 A
10 A
1 A
5 A
0.05
0
1 A
0
200
400
600
800 1000
0
200
400
600
800 1000
RateOfFallOfForwardCurrent-dI/dt(A/μs)
RateOfFallOfForwardCurrent-dI/dt(A/μs)
Fig. 5 - Recovery Time Characteristics, TJ = 25 °C
Fig. 8 - Recovery Charge Characteristics, TJ = 150 °C
0.5
4
Tj = 150 ˚C
Tj = 25 ˚C
3.5
Ifm = 30 A
0.4
3
20 A
2.5
0.3
Ifm = 30 A
2
1.5
1
10 A
0.2
20 A
5 A
1 A
10 A
0.1
5 A
0.5
0
1 A
0
0
200
400
600
800 1000
0
200
400
600
800 1000
RateOfFallOfForwardCurrent-dI/dt(A/μs)
RateOfFallOfForwardCurrent-dI/dt(A/μs)
Fig. 6 - Recovery Time Characteristics, TJ = 150 °C
Fig. 9 - Recovery Current Characteristics, TJ = 25 °C
70
10
Ifm = 30 A
20 A
Tj = 25 ˚C
Tj = 150 ˚C
9
8
7
6
5
4
3
2
1
0
Ifm = 30 A
20 A
60
50
40
30
20
10
0
10 A
5 A
10 A
5 A
1 A
1 A
0
200
400
600
800 1000
0
200
400
600
800 1000
RateOfFallOfForwardCurrent-dI/dt(A/μs)
RateOfFallOfForwardCurrent-dI/dt(A/μs)
Fig. 7 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 10 - Recovery Current Characteristics, TJ = 150 °C
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For technical questions within your region, please contact one of the following:
Document Number: 93050
Revision: 10-May-11
indmodules@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA60BA60
Vishay Semiconductors
Single Phase Fast Recovery Bridge
(Power Modules), 60 A
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 93050
Revision: 10-May-11
For technical questions within your region, please contact one of the following:
indmodules@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA60BA60
Vishay Semiconductors
Single Phase Fast Recovery Bridge
(Power Modules), 60 A
ORDERING INFORMATION TABLE
Device code
S
A
60
B
A
60
1
2
3
4
5
6
-
-
-
-
S = Fast recovery diode
1
2
3
4
A = Present Silicon Generation
Current rating (60 = 60 A)
Circuit configuration:
B = Single phase bridge
Package indicator:
-
-
5
6
A = SOT-227, standard insulated base
Voltage rating (60 = 600 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
1
+
2
4
~
Single phase bridge
B
-
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
www.vishay.com
6
For technical questions within your region, please contact one of the following:
indmodules@vishay.com
Document Number: 93050
Revision: 10-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A-
4
1
3
2
25.70 (1.012)
25.20 (0.992)
6.25 (0.246)
12.50 (0.492)
7.50 (0.295)
-B-
R full
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
M
M
M
B
0.25 (0.010)
C A
8.10 (0.319)
4 x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
-C-
0.12 (0.005)
Notes
•
•
Dimensioning and tolerancing per ANSI Y14.5M-1982
Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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