SBL10L30 [VISHAY]
Schottky Barrier Rectifier; 肖特基势垒整流器
| 型号： | SBL10L30 |
| 厂家： | 
VISHAY |
| 描述： | Schottky Barrier Rectifier |
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBL10L30, SBLF10L30 & SBLB10L30
New Product
Vishay Semiconductors
formerly General Semiconductor
Schottky Barrier Rectifier
Reverse Voltage 30V
Forward Current 10A
ITO-220AC (SBLF10L30)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AC (SBL10L30)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
DIA.
DIA.
0.154 (3.91)
0.148 (3.74)
DIA.
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.113 (2.87)
0.103 (2.62)
0.350 (8.89)
0.330 (8.38)
0.145 (3.68)
0.135 (3.43)
PIN
1
2
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
PIN
0.060 (1.52)
PIN 1
1
2
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
PIN 2
0.037 (0.94)
0.027 (0.69)
0.560 (14.22)
0.022 (0.55)
0.014 (0.36)
PIN 1
PIN 2
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
CASE
0.105 (2.67)
TO-263AB (SBLB10L30)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.190 (4.83)
0.160 (4.06)
0.411 (10.45)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout TO-263AB
0.245 (6.22)
MIN
K
0.42
(10.66)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.33
(8.38)
0.624 (15.85)
0.591 (15.00)
K
1
2
0.63
(17.02)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
Dimensions in inches
and (millimeters)
0.027 (0.686)
0.037 (0.940)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.08
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
(2.032)
0.12
0.205 (5.20)
0.195 (4.95)
(3.05)
0.24
(6.096)
Features
Mechanical Data
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Document Number 88724
14-Nov-02
www.vishay.com
1
SBL10L30, SBLF10L30 & SBLB10L30
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
30
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
21
V
30
V
Maximum average forward rectified current
at TC = 140 °C
10
IF(AV)
A
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
200
Peak repetitive reverse current at tp = 2µs, 1kHz
Voltage rate of change (rated VR)
IRRM
dv / dt
1.0
A
V / µs
°C
10,000
Operating junction and storage temperature range
TJ, TSTG
–65 to +150
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (SBLF type only) from terminals
to heatsink with t = 1 second, RH ≤ 30%
VISOL
V
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous
forward voltage (4)
at IF = 10A, TJ = 25°C
at IF = 10A, TJ = 125°C
0.52
0.43
VF
V
Maximum instantaneous reverse
current at DC blocking voltage(4)
TJ = 25°C
TJ = 125°C
1.0
100
IR
mA
Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
SBL
SBLF
SBLB
Unit
Typical thermal resistance from junction to case per leg
RθJC
4.3
4.8
4.3
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 2% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
SBL10L30
SBLF10L30
TO-220AC
ITO-220AC
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
SBLB10L30
TO-263AB
www.vishay.com
2
Document Number 88724
14-Nov-02
SBL10L30, SBLF10L30 & SBLB10L30
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Forward Current
Derating Curve
Fig. 2 - Typical Instantaneous
Forward Characteristics
12.5
100
Resistive or Inductive Load
10
10
TJ = 150°C
7.5
5
1.0
TJ = 125°C
TJ = 100°C
0.1
TJ = 25°C
2.5
0
0.01
50
150
100
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (V)
Case Temperature (°C)
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Typical Junction Capacitance
1000
100
10
10,000
1,000
TJ = 150°C
125°C
100°C
1
0.1
100
10
0.01
75°C
0.001
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 - Typical Thermal Impedance
100
10
1
0.1
0.1
1
10
0.01
t — Pulse Duration (sec.)
Document Number 88724
14-Nov-02
www.vishay.com
3
相关型号：
SBL10L30-45
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2
VISHAY
SBL10L30-HE3/45
DIODE 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
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