SBYV27-100 [VISHAY]
Soft Recovery Ultrafast Plastic Rectifier; 软恢复超快塑胶整流器
| 型号： | SBYV27-100 |
| 厂家： | 
VISHAY |
| 描述： | Soft Recovery Ultrafast Plastic Rectifier |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBYV27-50 THRU SBYV27-200
Vishay Semiconductors
formerly General Semiconductor
Soft Recovery Ultrafast
Reverse Voltage 50 to 200V
Forward Current 2.0A
DO-204AC (DO-15)
Plastic Rectifier
0.034 (0.86)
0.028 (0.71)
Dia.
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
• Ultrafast recovery time for high efficiency
• Excellent high temperature switching
• Soft recovery characteristics
1.0 (25.4)
min.
• Glass passivated junction
• High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.300 (7.6)
0.230 (5.8)
Mechanical Data
Case: JEDEC DO-204AC molded plastic body over
passivated chip
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Dimensions in inches
and (millimeters)
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbols SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
55
100
70
150
105
150
165
200
140
200
220
V
V
V
V
Maximum DC blocking voltage
Minimum reverse breakdown voltage at 100µA
100
110
VBR
Maximum average forward rectified current
0.375” (9.5mm) lead lengths at TL = 85ºC
IF(AV)
IFSM
2.0
A
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load (JEDEC Method) at TJ = 150ºC
50
45
Typical thermal resistance (NOTE 1)
RΘJA
°C/W
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbols SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 Units
Maximum instantaneous forward
voltage at 3.0A (NOTE 2)
TJ = 25°C
TJ = 150°C
1.07
0.88
VF
IR
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA =100°C
5.0
200
µA
Maximum reverse recovery time at I =0.5A, I =1.0A, I =0.25A
trr
15
15
ns
F
R
rr
Typical junction capacitance at 4.0V, 1MHz
CJ
pF
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length
(2) Pulse test: 300µs pulse width, duty cycle ≤ 2%
Document Number 88736
14-May-03
www.vishay.com
1
SBYV27-50 THRU SBYV27-200
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Derating Curves
60
50
40
30
20
10
0
3.0
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
TL Lead Temperature
10ms Single Half Sine-Wave
TJ = 175°C
2.5
2.0
1.5
1.0
0.5
0
TA, Ambient Temperature
P.C.B. Mounted
0.5" x 0.5" (12 x 12mm)
Copper Pads
0
25
50
75
100
125
150
175
1
10
100
Temperature (°C)
Number of Cycles at 50 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse Leakage
Characteristics
1000
100
100
10
TJ = 100°C
TJ = 100°C
Pulse Width = 300µs
1% Duty Cycle
1
0.1
10
1
TJ = 25°C
TJ = 25°C
0.01
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Reverse Switching
Characteristics
Fig. 6 – Typical Junction Capacitance
60
100
T = 25°C
J
IF = 2.0A
VR=30V
f = 1.0MHZ
Vsig = 50mVp-p
50
40
30
20
di/dt=150A/µs
di/dt=100A/µs
di/dt=20A/µs
di/dt=50A/µs
10
di/dt=100A/µs
di/dt=150A/µs
di/dt=50A/µs
di/dt=20A/µs
10
0
trr
Q
rr
1
0.1
0
25
50
75
100
125
150
175
1
10
100
Junction Temperature (°C)
Reverse Voltage (V)
www.vishay.com
2
Document Number 88736
14-May-03
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