SD0520LS/E9 [VISHAY]
Rectifier Diode,;
VISHAY 
SD0520LS
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Schottky Diode
TO-236AB (SOT-23)
Mounting Pad Layout
.122 (3.1)
.110 (2.8)
0.031 (0.8)
.016 (0.4)
Top View
3
0.035 (0.9)
0.079 (2.0)
Dimensions in inches
and (millimeters)
1
2
0.037 (0.95)
0.037 (0.95)
.037(0.95)
.037(0.95)
Schematic
Top View
T
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Mechanical Data
Features
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: S20
• Low forward voltage drop
• Ultrafast switching
• Ideal for hard-disk drive applications
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
Unit
V
Continuous Reverse Voltage
Forward Current
VR
20
IF
500
mA
°C/W
°C
Thermal Resistance Junction to Ambient Air
Maximum Junction Temperature
Storage Temperature Range
RΘJA
Tj
500(1)
150
TS
–65 to +150
°C
Electrical Characteristics(T = 25°C unless otherwise noted)
A
Parameter
Symbol
V(BR)R
IR
Value
20
Unit
V
Minimum Reverse Breakdown Voltage at 10µA
Maximum Leakage Current at VR = 10V
20
µA
IF = 50mA
IF = 150mA
400
500
VF
mV
Maximum Forward Voltage at
Typical Diodes Capacitance at VR = 0V, f = 1MHZ
Typ. Reverse Recovery Time at IF = IR = 100mA
Note: (1) Valid provided that electrodes are kept at ambient temperature
CD
trr
370
32
pF
ns
Document Number 88240
15-May-02
www.vishay.com
1
相关型号：
SD05C-7
Trans Voltage Suppressor Diode, 640W, 5.5V V(RWM), Bidirectional, 1 Element, Silicon,
DIODES
©2020 ICPDF网 联系我们和版权申明