首页 > 二极管 > 整流二极管 > SD1053C18S30L

SD1053C18S30L

更新时间：2025-06-29 07:52:59
品牌：VISHAY
描述：Fast Recovery Diodes (Hockey PUK Version), 920/1050 A

PDF下载

中文翻译

免费 PCB/SMT

SD1053C18S30L 概述

Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 快恢复二极管（曲棍球PUK版） ，一千〇五十零分之九百二一 整流二极管

SD1053C18S30L 规格参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DO-200AB
包装说明：ROHS COMPLIANT, CERAMIC, BPUK-2针数：2
Reach Compliance Code：compliantHTS代码：8541.10.00.80
风险等级：5.59Is Samacsys：N
其他特性：FREE WHEELING DIODE, SNUBBER DIODE应用：HIGH VOLTAGE HIGH POWER FAST SOFT RECOVERY
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：2.26 V
JEDEC-95代码：DO-200ABJESD-30 代码：O-CEDB-N2
最大非重复峰值正向电流：13610 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-40 °C
最大输出电流：920 A封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：ROUND封装形式：DISK BUTTON
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：1800 V最大反向恢复时间：3 µs
子类别：Rectifier Diodes表面贴装：YES
端子面层：Nickel (Ni)端子形式：NO LEAD
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SD1053C18S30L 数据手册

通过下载SD1053C18S30L数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
SD1053C..L Series  
Vishay High Power Products  
Fast Recovery Diodes  
(Hockey PUK Version), 920/1050 A  
FEATURES  
• High power FAST recovery diode series  
• 2.0 to 3.0 µs recovery time  
• High voltage ratings up to 3000 V  
• High current capability  
RoHS  
COMPLIANT  
• Optimized turn-on and turn-off characteristics  
• Low forward recovery  
• Fast and soft reverse recovery  
• Press PUK encapsulation  
DO-200AB (B-PUK)  
• Case style conform to JEDEC DO-200AB (B-PUK)  
• Maximum junction temperature 150 °C  
• RoHS compliant  
• Lead (Pb)-free  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
IF(AV)  
920/1050 A  
TYPICAL APPLICATIONS  
• Snubber diode for GTO  
• High voltage freewheeling diode  
• Fast recovery rectifier applications  
MAJOR RATINGS AND CHARACTERISTICS  
SD1053C..L  
UNITS  
PARAMETER  
TEST CONDITIONS  
S20  
S30  
1050  
920  
55  
A
IF(AV)  
Ths  
55  
°C  
IF(RMS)  
IFSM  
VRRM  
trr  
1940  
15 000  
1700  
13 000  
50 Hz  
60 Hz  
Range  
A
15 700  
13 610  
1800 to 2500  
2.0  
1800 to 3000  
3.0  
V
µs  
TJ  
25  
°C  
TJ  
- 40 to 150  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
V
RRM, MAXIMUM REPETITIVE  
VRSM, MAXIMUM NON-REPETITIVE  
IRRM MAXIMUM  
AT TJ = TJ MAXIMUM  
mA  
VOLTAGE  
CODE  
TYPE NUMBER  
PEAK REVERSE VOLTAGE  
PEAK REVERSE VOLTAGE  
V
V
18  
22  
25  
18  
22  
25  
28  
30  
1800  
2200  
2500  
1800  
2200  
2500  
2800  
3000  
1900  
2300  
2600  
1900  
2300  
2600  
2900  
3100  
SD1053C..S20L  
50  
SD1053C..S30L  
Document Number: 93167  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
FORWARD CONDUCTION  
SD1053C..L  
S20 S30  
1050 (450) 920 (390)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
A
Maximum average forward current  
at heatsink temperature  
180° conduction, half sine wave  
Double side (single side) cooled  
IF(AV)  
55 (85)  
1940  
55 (85)  
1700  
13 000  
13 610  
10 930  
11 450  
845  
°C  
Maximum RMS forward current  
IF(RMS)  
25 °C heatsink temperature double side cooled  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
15 000  
15 700  
12 620  
13 210  
1125  
No voltage  
reapplied  
A
Maximum peak, one-cycle forward,  
non-repetitive surge current  
IFSM  
100 % VRRM  
reapplied  
Sinusoidal half wave,  
initial TJ = TJ maximum  
No voltage  
reapplied  
1027  
772  
Maximum I2t for fusing  
I2t  
kA2s  
796  
598  
100 % VRRM  
reapplied  
727  
546  
Maximum I2√t for fusing  
I2√t  
t = 0.1 to 10 ms, no voltage reapplied  
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum  
(I > π x IF(AV)), TJ = TJ maximum  
11 250  
1.34  
8450  
1.51  
kA2√s  
Low level value of threshold voltage  
High level value of threshold voltage  
VF(TO)1  
VF(TO)2  
V
1.48  
1.67  
Low level value of forward  
slope resistance  
rf1  
rf2  
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum  
(I > π x IF(AV)), TJ = TJ maximum  
0.37  
0.33  
1.90  
0.50  
0.45  
2.26  
mΩ  
High level value of forward  
slope resistance  
Ipk = 1500 A, TJ = TJ maximum,  
tp = 10 ms sinusoidal wave  
Maximum forward voltage drop  
VFM  
V
RECOVERY CHARACTERISTICS  
MAXIMUM VALUE  
AT TJ = 25 °C  
TYPICAL VALUES  
AT TJ = 150 °C  
TEST CONDITIONS  
Ipk  
IFM  
CODE  
trr  
trr AT 25 % IRRM  
(µs)  
SQUARE  
PULSE  
(A)  
dI/dt  
(A/µs)  
Vr  
(V)  
trr AT 25 % IRRM  
Qrr  
(µC)  
Irr  
(A)  
(µs)  
t
dir  
dt  
Qrr  
S20  
S30  
2.0  
3.0  
4.0  
4.5  
400  
550  
180  
230  
IRM(REC)  
1000  
100  
- 50  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction operating  
and storage temperature range  
TJ, TStg  
- 40 to 150  
°C  
DC operation single side cooled  
DC operation double side cooled  
0.073  
0.031  
Maximum thermal resistance,  
case junction to heatsink  
RthJ-hs  
K/W  
14 700  
(1500)  
N
(kg)  
Mounting force, 10 %  
Approximate weight  
Case style  
255  
g
See dimensions - link at the end of datasheet  
DO-200AB (B-PUK)  
www.vishay.com  
2
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93167  
Revision: 14-May-08  
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
ΔRthJ-hs CONDUCTION  
SINUSOIDAL CONDUCTION  
RECTANGULAR CONDUCTION  
CONDUCTION ANGLE  
TEST CONDITIONS  
UNITS  
SINGLE SIDE  
0.009  
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE  
180°  
120°  
90°  
0.008  
0.011  
0.014  
0.021  
0.036  
0.006  
0.011  
0.015  
0.021  
0.036  
0.006  
0.011  
0.015  
0.022  
0.036  
0.011  
0.014  
TJ = TJ maximum  
K/W  
60°  
0.020  
30°  
0.036  
Note  
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
SD1053C..S20L Series  
(Single Side Cooled)  
thJ-hs  
SD1053C..S30LSeries  
(Single Side Cooled)  
thJ-hs  
R
(DC) = 0.073 K/W  
R
(DC) = 0.073 K/W  
Conduction Angle  
Conduction Angle  
60  
30°  
60°  
90°  
60  
180°  
60°  
40  
120°  
180°  
30°  
90°  
120°  
40  
20  
0
100 200 300 400 500 600 700  
Average Forward Current (A)  
0
100 200 300 400 500 600  
Average Forward Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 3 - Current Ratings Characteristics  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
SD 1 053C . . S20L Series  
(Single Side Cooled)  
thJ-hs  
SD 1 053C . . S30 L Se r ie s  
(Single Side Cooled)  
thJ-hs  
R
(DC) = 0.073 K/W  
R
(DC) = 0.073 K/W  
Conduction Period  
Conduction Period  
60  
30°  
30°  
60  
60°  
60°  
90°  
120°  
40  
90°  
120°  
40  
20  
180°  
180°  
DC  
DC  
20  
0
0
200 400 600 800 1000 1200  
Average Forward Current (A)  
0
200  
400  
600  
800  
1000  
Average Forward Current (A)  
Fig. 4 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
Document Number: 93167  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
3
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
160  
160  
140  
120  
100  
80  
SD1053C..S20LSeries  
SD 1053C .. S30L Se rie s  
(Double Side Cooled)  
thJ-hs  
(Double Side Cooled)  
140  
R
(DC) = 0.031 K/W  
thJ-hs  
R
(DC) = 0.031 K/W  
120  
100  
80  
60  
40  
20  
0
Conduction Angle  
90°  
Conduction Period  
30°  
60°  
60  
30°  
60°  
90°  
120°  
180°  
120°  
40  
180°  
20  
DC  
0
0
400  
Average Forward Current (A)  
Fig. 8 - Current Ratings Characteristics  
800  
1200 1600 2000  
0
200 400 600 800 1000 1200 1400  
Average Forward Current (A)  
Fig. 5 - Current Ratings Characteristics  
3500  
3000  
2500  
2000  
1500  
1000  
500  
160  
140  
120  
100  
80  
SD1053C..S20L Series  
(Double Side Cooled)  
thJ-hs  
180°  
120°  
90°  
R
(DC) = 0.031 K/W  
60°  
RM S Lim it  
30°  
Conduction Period  
30°  
60  
60°  
90°  
Conduction Angle  
120°  
40  
180°  
SD 1053C . . S2 0L Se r ie s  
20  
T = 150°C  
J
DC  
1200 1600 2000  
0
0
0
200 400 600 800 1000 1200 1400  
Average Forward Current (A)  
0
400  
800  
Average Forward Current (A)  
Fig. 9 - Forward Power Loss Characteristics  
Fig. 6 - Current Ratings Characteristics  
4500  
160  
140  
120  
100  
80  
SD1053C..S30L Series  
(Double Side Cooled)  
thJ-hs  
DC  
180°  
120°  
90°  
60°  
30°  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
R
(DC) = 0.031 K/W  
Conduction Angle  
RM S Lim it  
60  
Conduction Period  
40  
SD1053C..S20L Series  
T = 150°C  
J
20  
90°  
120°  
60°  
30°  
180°  
0
0
0
400  
800  
1200 1600 2000  
0
200 400 600 800 1000 1200  
Average Forward Current (A)  
Average Forward Current (A)  
Fig. 10 - Forward Power Loss Characteristics  
Fig. 7 - Current Ratings Characteristics  
www.vishay.com  
4
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93167  
Revision: 14-May-08  
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
3200  
2800  
2400  
2000  
1600  
1200  
800  
16000  
Maximum Non Repetitive Surge Current  
VersusPulse Train Duration.  
180°  
120°  
90°  
14000  
12000  
10000  
8000  
Initial T = 150 °C  
J
No Voltage Reapplied  
RM S Lim it  
Rated V  
Reapplied  
60°  
RRM  
30°  
Conduction Angle  
6000  
SD1053C..S30LSeries  
J
SD1053C..S20LSeries  
4000  
400  
T = 150°C  
0
2000  
0
200 400 600 800 1000 1200  
Average Forward Current (A)  
0.01  
0.1  
Pulse Train Duration (s)  
1
Fig. 11 - Forward Power Loss Characteristics  
Fig. 14 - Maximum Non-Repetitive Surge Current  
4500  
12000  
At Any Rated Load Condition And With  
DC  
180°  
120°  
90°  
Rated V  
Applied Following Surge.  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
RRM  
11000  
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
Initial T = 150°C  
J
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
60°  
30°  
RM S Lim it  
Conduction Period  
SD1053C..S30LSeries  
T = 150° C  
J
SD1053C..S30LSeries  
10  
0
0
400  
Average Forward Current (A)  
Fig. 12 - Forward Power Loss Characteristics  
800  
1200 1600 2000  
1
100  
Number Of Equal Amplitude Half Cycle Current Pulses(N)  
Fig. 15 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
13000  
14000  
Maximum Non Repetitive Surge Current  
At Any Rated Load Condition And With  
Rated V  
RRM  
Applied Following Surge.  
12000  
11000  
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
VersusPulse Train Duration.  
13000  
12000  
11000  
10000  
9000  
8000  
7000  
6000  
5000  
4000  
Initial T = 150 °C  
Initial T = 150 °C  
J
J
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
No Voltage Reapplied  
Rated V  
Reapplied  
RRM  
SD1053C..S20L Series  
10  
SD1053C..S30LSeries  
0.01  
0.1  
Pulse Train Dura tion (s)  
1
1
100  
Number Of Equal Amplitude Half Cycle Current Pulses(N)  
Fig. 13 - Maximum Non-Repetitive Surge Current  
Fig. 16 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Document Number: 93167  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
5
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
10000  
10000  
T = 25° C  
J
T = 25° C  
J
T = 150° C  
T = 150° C  
J
J
1000  
1000  
SD1053C..S20L Series  
SD1053C .. S30L Se rie s  
100  
100  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5  
InstantaneousForward Voltage (V)  
InstantaneousForward Voltage (V)  
Fig. 17 - Forward Voltage Drop Characteristics  
Fig. 18 - Forward Voltage Drop Characteristics  
0.1  
SD1053C..S20/ S30LSeries  
St e a d y St a t e V a lu e  
= 0.073 K/ W  
0.01  
R
thJ-hs  
(Single Side Cooled)  
= 0.031 K/ W  
R
thJ-hs  
(Double Side Cooled)  
(DC Operation)  
0.001  
0.001  
0.01  
0.1  
1
10  
100  
Square Wave Pulse Duration (s)  
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic  
100  
80  
60  
40  
20  
0
160  
V
V
FP  
FP  
T = 150°C  
J
I
I
T = 150°C  
J
120  
80  
40  
0
T = 25° C  
J
T = 25°C  
J
SD1053C..S30LSeries  
1200 1600 2000  
SD1053C..S20L Series  
800 1200 1600 2000  
0
400  
0
400  
800  
Ra t e O f Rise O f Fo rw a rd C urre n t - d i/ d t ( A/ us)  
Rate Of Rise Of Forward Current - di/dt (A/us)  
Fig. 20 - Typical Forward Recovery Characteristics  
Fig. 21 - Typical Forward Recovery Characteristics  
www.vishay.com  
6
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93167  
Revision: 14-May-08  
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
6.5  
6
9
SD1053C..S30LSeries  
SD1053C..S20L Series  
T = 150 °C; V > 100V  
8.5  
T = 150 °C; V > 100V  
r
J
J
r
8
7.5  
7
5.5  
5
I
= 1500 A  
FM  
6.5  
6
Sin e Pu lse  
1000 A  
500 A  
4.5  
4
I
= 1500 A  
FM  
Sin e Pu lse  
5.5  
5
1000 A  
500 A  
3.5  
3
4.5  
4
3.5  
10  
2.5  
10  
100  
1000  
100  
1000  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Fig. 22 - Recovery Time Characteristics  
Fig. 25 - Recovery Time Characteristics  
1000  
1600  
I
= 1500 A  
I
= 1500 A  
FM  
FM  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
1400  
1200  
1000  
800  
600  
400  
200  
0
Sin e Pu lse  
Sin e Pu lse  
1000 A  
500 A  
1000 A  
500 A  
SD1053C..S20L Series  
T = 150 °C; V > 100V  
SD1053C..S30LSeries  
T = 150°C; V > 100V  
r
J
r
J
0
50 100 150 200 250 300  
0
50 100 150 200 250 300  
Rate Of Fall Of Forward Current - di/ dt (A/ µs)  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Fig. 23 - Recovery Charge Characteristics  
Fig. 26 - Recovery Charge Characteristics  
500  
700  
I
= 1500 A  
I
= 1500 A  
FM  
FM  
450  
400  
350  
300  
250  
200  
150  
100  
50  
Sin e Pu l se  
600  
500  
400  
300  
200  
100  
0
Sin e Pu lse  
1000 A  
1000 A  
500 A  
500 A  
SD1053C..S20LSeries  
T = 1 50 ° C ; V > 100V  
SD1053C..S30LSeries  
T = 150° C ; V > 100V  
r
J
r
J
0
0
50 100 150 200 250 300  
0
50 100 150 200 250 300  
Rate Of Fall Of Forward Current - di/ dt (A/ µs)  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Fig. 24 - Recovery Current Characteristics  
Fig. 27 - Recovery Current Characteristics  
Document Number: 93167  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
7
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
1E4  
1E3  
1E2  
1E4  
10 joulesp er pulse  
6
4
2
50 Hz  
100  
200  
400  
1
600  
1000  
1500  
0.6  
0.4  
0.2  
2000  
3000  
4000  
1E3  
1E2  
0.08  
6000  
SD1053C..S20L Series  
Tr a p e zo id a l Pu lse  
T = 55°C, VRRM = 800V  
dCv/dt = 1000V/us,  
di/dt = 300A/us  
10000  
15000  
SD1053C..S20L Series  
Si n u so i d a l Pu l se  
T = 150°C, VRRM = 800V  
dJv/dt = 1000V/µs  
tp  
tp  
20000  
1E2  
1E1  
1E2  
1E3  
1E4  
1E1  
1E3  
1E4  
Pulse Ba sew id t h (µs)  
Pulse Basewidth (µs)  
Fig. 31 - Frequency Characteristics  
Fig. 28 - Maximum Total Energy Loss  
Per Pulse Characteristics  
1E4  
1E4  
1E3  
1E2  
50 Hz  
200 100  
400  
1000  
2000  
3000  
10 joules per p ulse  
6
4
4000  
2
6000  
1
0.8  
0.6  
1E3  
10000  
SD 1 0 5 3 C . . S2 0 L Se r ie s  
Sin u so id a l Pu lse  
T = 55°C, VRRM = 800V  
0.4  
15000  
20000  
C
tp  
dv/dt = 1000V/us  
SD1053C ..S20L Se rie s  
Trapezoidal Pulse  
T = 150°C, VRRM = 800V  
J
tp  
d v/dt = 1000V/ µs, di/dt = 100A/µs  
1E2  
1E1  
1E1  
1E2  
1E3  
1E4  
1E2  
1E3  
1E4  
Pulse Basewidth (µs)  
Pulse Basewidth (µs)  
Fig. 29 - Frequency Characteristics  
Fig. 32 - Maximum Total Energy Loss  
Per Pulse Characteristics  
1E4  
1E3  
1E2  
1E4  
1E3  
1E2  
10 joulesper pulse  
50 Hz  
100  
6
200  
400  
600  
4
1000  
2
2000  
4000  
1
6000  
0.8  
0.6  
10000  
0.4  
SD1053C..S20L Series  
Tr a p e zo id a l Pu lse  
T = 55°C, VRRM = 800V  
SD1 0 53 C .. S2 0L Se rie s  
Trapezoidal Pulse  
T = 150°C, VRRM = 800V  
15000  
20000  
C
J
tp  
dv/dt = 1000V/us  
di/dt = 100A/us  
tp  
dv/ dt = 1000V/µs, di/dt = 300A/ µs  
1E1  
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
1E4  
Pulse Basewidth (µs)  
Pulse Ba se w id t h (µs)  
Fig. 30 - Maximum Total Energy Loss  
Per Pulse Characteristics  
Fig. 33 - Frequency Characteristics  
www.vishay.com  
8
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93167  
Revision: 14-May-08  
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
1E4  
1E3  
1E2  
1E4  
10 joulesper pulse  
6
4
2
50 Hz  
100  
1
200  
400  
600  
0.6  
0.4  
1000  
1500  
2000  
3000  
4000  
6000  
1E3  
0.2  
SD1053C..S30LSeries  
Trapezoidal Pulse  
T = 55°C, VRRM = 1000V  
SD1053C..S30L Series  
Sinusoidal Pulse  
C
10000  
15000  
T = 150°C, VRRM = 1000V  
dv/dt = 1000V/us,  
di/ dt = 300A/ us  
J
tp  
tp  
dv/dt = 1000V/µs  
1E2  
1E1  
1E2  
1E3  
1E4  
1E4  
1E4  
1E1  
1E2  
1E3  
1E4  
Pulse Ba se w id t h ( µs)  
Pulse Ba sew id t h (µs)  
Fig. 37 - Frequency Characteristics  
Fig. 34 - Maximum Total Energy Loss  
Per Pulse Characteristics  
1E4  
1E3  
1E2  
1E4  
1E3  
1E2  
200  
50 Hz  
100  
1000  
2000  
3000  
4000  
6000  
400  
10 joules p er pulse  
6
4
2
1
0.8  
0.6  
10000  
SD1053C..S30L Series  
Sinusoidal Pulse  
T = 55°C, VRRM = 1000V  
dCv/dt = 1000V/us  
SD1053C..S30L Series  
Tr a p e zo id a l Pu lse  
15000  
20000  
tp  
T = 150°C, VRRM = 1000V  
J
tp  
dv/dt = 1000V/µs, di/dt = 100A/µs  
1E1  
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
Pulse Basewidth (µs)  
Pulse Ba sew id th (µs)  
Fig. 35 - Frequency Characteristics  
Fig. 38 - Maximum Total Energy Loss  
Per Pulse Characteristics  
1E4  
1E3  
1E2  
1E4  
1E3  
1E2  
10 joules per p ulse  
50 Hz  
6
4
100  
200  
400  
600  
1000  
2000  
3000  
2
4000  
6000  
1
0.8  
0.6  
SD1053C..S30LSeries  
Tr a p e zo id a l Pu lse  
T = 55°C, VRRM = 1000V  
SD1053C..S30LSeries  
Trapezoidal Pulse  
10000  
15000  
C
T = 150°C, VRRM = 1000V  
dv/dt = 1000V/µs, di/dt = 300A/µs  
J
dv/dt = 1000V/us,  
di/ dt = 100A/ us  
tp  
tp  
1E1  
1E2  
1E3  
1E1  
1E2  
1E3  
1E4  
Pulse Ba sew idt h (µs)  
Fig. 39 - Frequency Characteristics  
Pulse Ba sew id th (µs)  
Fig. 36 - Maximum Total Energy Loss  
Per Pulse Characteristics  
Document Number: 93167  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
9
SD1053C..L Series  
Fast Recovery Diodes  
(Hockey PUK Version),  
920/1050 A  
Vishay High Power Products  
ORDERING INFORMATION TABLE  
Device code  
SD 105  
3
C
30 S30  
L
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode  
Essential part number  
3 = Fast recovery  
C = Ceramic PUK  
Voltage code x 100 = VRRM (see Voltage Ratings table)  
trr code  
L = PUK case DO-200AB (B-PUK)  
LINKS TO RELATED DOCUMENTS  
Dimensions  
http://www.vishay.com/doc?95246  
www.vishay.com  
10  
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93167  
Revision: 14-May-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

SD1053C18S30L 相关器件

型号 制造商 描述 价格 文档
SD1053C20S20L VISHAY Rectifier Diode, 1 Phase, 1 Element, 1050A, 2000V V(RRM), Silicon, 获取价格
SD1053C22S20L VISHAY Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 获取价格
SD1053C22S20L INFINEON Rectifier Diode, 1 Phase, 1 Element, 1050A, 2200V V(RRM), Silicon, DO-200AB, ROHS COMPLIANT, CERAMIC, BPUK-2 获取价格
SD1053C22S20LPBF INFINEON Rectifier Diode, 1 Phase, 1 Element, 1050A, 2200V V(RRM), Silicon, DO-200AB, BPUK-2 获取价格
SD1053C22S30L VISHAY Fast Recovery Diodes (Hockey PUK Version), 920/1050 A 获取价格
SD1053C22S30L INFINEON Rectifier Diode, 1 Phase, 1 Element, 920A, 2200V V(RRM), Silicon, DO-200AB, ROHS COMPLIANT, CERAMIC, BPUK-2 获取价格
SD1053C22S30LPBF INFINEON Rectifier Diode, 1 Phase, 1 Element, 920A, 2200V V(RRM), Silicon, DO-200AB, BPUK-2 获取价格
SD1053C24S20L VISHAY DIODE 1050 A, 2400 V, SILICON, RECTIFIER DIODE, Rectifier Diode 获取价格
SD1053C24S20LPBF VISHAY Rectifier Diode, 1 Phase, 1 Element, 1050A, 2400V V(RRM), Silicon, 获取价格
SD1053C24S30LPBF VISHAY Rectifier Diode, 1 Phase, 1 Element, 920A, 2400V V(RRM), Silicon, 获取价格

SD1053C18S30L 相关文章

  • 2025 年内存行业：关键战役打响，谁能脱颖而出
    2025-07-02
    6
  • 突破光刻限制：更大光罩引领半导体制造新变革
    2025-07-01
    49
  • 台积电、三星逐鹿 1nm 工艺，半导体产业风云变幻
    2025-07-01
    24
  • 防反接、防倒灌与过流保护电路：设计方法大揭秘
    2025-07-01
    20

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 规格参数
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286