SD403C12S15C [VISHAY]
Fast Recovery Diodes (Hockey PUK Version), 430 A; 快恢复二极管（曲棍球PUK版） ， 430
| 型号： | SD403C12S15C |
| 厂家： | 
VISHAY |
| 描述： | Fast Recovery Diodes (Hockey PUK Version), 430 A |
| 文件： | 总8页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD403C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 430 A
FEATURES
• High power FAST recovery diode series
• 1.0 to 1.5 µs recovery time
RoHS
COMPLIANT
• High voltage ratings up to 1600 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
DO-200AA
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC DO-200AA
• Maximum junction temperature 125 °C
• Lead (Pb)-free
PRODUCT SUMMARY
IF(AV)
430 A
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
430
UNITS
A
°C
A
IF(AV)
Ths
Ths
55
675
IF(RMS)
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
Range
6180
IFSM
A
6470
191
I2t
kA2s
175
VRRM
trr
400 to 1600
1.0 to 1.5
25
V
µs
TJ
°C
TJ
- 40 to 125
Document Number: 93175
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD403C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 430 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
04
08
10
12
14
16
400
800
500
900
SD403C..S10C
1000
1200
1400
1600
1100
1300
1500
1700
35
SD403C..S15C
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
430 (210)
55 (75)
675
UNITS
A
Maximum average forward current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
°C
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
6180
6470
5200
5445
191
No voltage
reapplied
A
Maximum peak, one-cycle ,
non-repetitive forward current
IFSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
175
Maximum I2t for fusing
I2t
kA2s
135
100 % VRRM
reapplied
123
Maximum I2√t for fusing
I2√t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
1910
1.00
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
V
1.20
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
0.56
mΩ
rf2
0.70
VFM
Ipk = 1350 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
1.83
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
Ipk
IFM
CODE
trr
t
rr AT 25 % IRRM
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
Qrr
(µC)
Irr
(A)
(µs)
(µs)
t
dir
dt
Qrr
S10
S15
1.0
1.5
2.4
2.9
52
90
33
44
IRM(REC)
750
25
- 30
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93175
Revision: 04-Aug-08
SD403C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 430 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.16
UNITS
Maximum operating temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
K/W
0.08
Mounting force, 10 %
Approximate weight
4900 (500)
70
N (kg)
g
See dimensions - link at the end of
datasheet
Case style
DO-200AA
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.010
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.011
0.013
0.016
0.024
0.042
0.008
0.013
0.018
0.025
0.042
0.008
0.013
0.018
0.025
0.042
0.012
0.016
TJ = TJ maximum
K/W
60°
0.024
30°
0.042
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93175
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD403C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 430 A
Vishay High Power Products
1 3 0
1 2 0
1 3 0
SD 4 03C ..C Se rie s
S D 403C ..C S eries
(S in g le Sid e C oo le d )
(D ou b le Sid e C o ole d )
1 2 0
1 1 0
1 0 0
9 0
R
(D C ) = 0.16 K /W
R
(D C ) = 0.08 K /W
thJ- hs
thJ-h s
1 1 0
1 0 0
9 0
C ondu ction Period
C onduction An gle
8 0
7 0
6 0
1 80°
1 20°
90°
8 0
60°
30°
5 0
90°
60°
1 20°
30 °
2 00
180°
5 00
D C
7 0
4 0
0
50
1 0 0
1 50
2 00
2 50
0
1 0 0
30 0
4 00
6 0 0
7 00
A ve ra g e F orw a r d C u rre n t (A )
A vera g e F orw a r d C u rre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
800
700
600
500
400
300
200
100
0
1 3 0
1 2 0
1 1 0
1 0 0
90
S D 403C ..C Se rie s
(S in gle Sid e C oo led )
180°
120°
90°
R
(D C ) = 0.16 K /W
thJ-h s
60°
30°
RMS Limit
C ondu ction Period
80
70
60
50
30 °
C ondu ction Angle
60°
9 0°
1 20°
SD403C..C Series
= 125°C
T
J
D C
180 °
2 50
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
0
5 0
1 0 0
1 5 0
20 0
30 0
35 0
Ave ra g e F or w a rd C u rr en t (A )
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
1 10 0
130
120
110
100
90
SD403C..C Series
1 00 0
90 0
80 0
70 0
60 0
50 0
40 0
30 0
20 0
10 0
0
D C
180°
120°
90°
(Double Side Cooled)
R
(DC) = 0.08 K/W
th J-hs
60°
30°
C ond uction Angle
RM S Lim it
80
C ondu ction Period
SD 40 3C ..C S er ies
30°
60°
70
90°
120°
180°
60
T
=
125° C
J
50
0
1 00
20 0
3 00
4 0 0
5 00
60 0
7 00
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
A ve ra g e F o rw a rd C u rre n t (A )
Fig. 6 - Forward Power Loss Characteristics
Fig. 3 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93175
Revision: 04-Aug-08
SD403C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 430 A
Vishay High Power Products
6 00 0
5 50 0
5 00 0
4 50 0
4 00 0
3 50 0
3 00 0
2 50 0
2 00 0
A t A n y R a te d Lo a d C on d itio n A n d W ith
R a te d A p p lied Fo llo w in g S u rg e.
1
V
RR M
In itia l T
= 125° C
J
SD 403 C ..C S eries
@
@
60 H z 0.0 083
s
s
50 H z 0.0 100
0 .1
S te a d y Sta te V a lu e
0.16 K /W
(S in g le Sid e C oo le d )
0.08 K /W
R
=
thJ-hs
0. 01
0 .0 01
R
=
thJ- hs
S D 403 C ..C S eries
(D o ub le S id e C o ole d )
(D C O p e ra tio n )
1
1 0
1 00
0 .0 01
0 .01
0 .1
1
10
10 0
Num ber Of Equ al Amplitud e Ha lf Cycle C urrent Pulses (N)
S q u a re W a ve P u lse D u ra tion (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
2.8
7000
Maximum Non Repetitive Surge Current
SD 4 03C ..S10C Se ries
Versus Pulse Train D uration.
T
=
1 25 ° C ; V
= 30 V
r
J
2.6
2.4
2.2
6000
5000
4000
3000
2000
1000
Initial T = 125°C
J
No Voltage Reapplied
I
= 750 A
FM
Rated V
Reapplied
RR M
Squa re Pulse
400 A
200 A
2
1.8
1.6
SD 403C..C Series
10
100
0.01
0.1
Pulse Train Duration (s)
1
Rate Of Fall Of Forw ard Current - d i/dt (A/µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Recovery Time Characteristics
10000
14 0
13 0
12 0
11 0
10 0
9 0
I
= 7 50 A
T
= 25 °C
FM
Squa re Pulse
J
T
= 125 °C
J
400 A
1000
100
10
8 0
200 A
7 0
6 0
SD403C ..C Ser ie s
5 0
4 0
SD 40 3C ..S10 C Se rie s
125 ° C ; 3 0V
3 0
T
=
V
=
r
J
2 0
1 0
0
1
2
3
4
5
6
7
0
20
40
6 0
80
100
In stan ta n eo us Forw ar d V o lta ge (V )
R ate Of Fa ll Of Forw ard C urrent - di/dt (A/µs)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 12 - Recovery Charge Characteristics
Document Number: 93175
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
SD403C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 430 A
Vishay High Power Products
90
170
I
= 75 0 A
FM
I
= 750 A
FM
160
150
140
130
120
110
100
90
Sq uare Pulse
80
Squa re Pu lse
400 A
200 A
70
60
50
400 A
200 A
40
30
80
70
SD403C..S10C Series
SD 40 3C ..S15C Se rie s
20
10
T
= 125°C; V = 30V
r
60
T
=
12 5 ° C ; V
=
30V
J
r
J
50
0
2 0
40
60
8 0
10 0
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forw ard C urrent - d i/dt (A/µs)
Rate Of Fall Of Forw ard C urrent - di/dt (A/µs)
Fig. 13 - Recovery Current Characteristics
Fig. 15 - Recovery Charge Characteristics
3.5
130
S D 403C ..S1 5C S erie s
I
=
750 A
120
110
100
90
FM
T
=
125 °C ; V
= 30V
r
J
Squ are Pu lse
3
2.5
2
I
=
750 A
FM
400 A
Sq uare Pulse
80
70
200 A
60
400 A
200 A
50
40
30
SD 4 03C ..S15 C S erie s
T
=
12 5 °C ; V
= 30V
J
r
20
10
1.5
1 0 20 3 0 40 5 0 60 70 80 9 0 10 0
1 0
10 0
R ate O f Fa ll Of Forw ard C urrent - di/dt (A/µs)
Rate Of Fall Of Forw ard C urren t - di/d t (A/µs)
Fig. 14 - Recovery Time Characteristics
Fig. 16 - Recovery Current Characteristics
1E 4
1E 3
1E 2
1E 1
20 jou les p er p ulse
20 joules p er pulse
10
10
4
4
2
1
2
1
0.4
0.4
0.2
0.2
0.1
0.04
0.02
0.01
0.1
0.04
SD403C..S10C Series
Trapezoidal Pulse
TJ = 1 25°C, VRRM= 800V
SD403C ..S10C S eries
Sinu soidal Pulse
TJ = 125°C , VRRM= 800V
d v/d t = 10 00V /µs
tp
d v/dt = 1000V/µs ; d i/dt= 50A/µs
tp
1E1
1 E2
1E3
1E4
1E 1
1 E2
1E3
1E 4
P ulse B a sew id th (µ s)
P u lse B a se w id th (µ s)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
For technical questions, contact: ind-modules@vishay.com
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Document Number: 93175
Revision: 04-Aug-08
SD403C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 430 A
Vishay High Power Products
1E4
1E3
1E2
1E1
20 joules per pu lse
20 joules per pulse
10
10
4
4
2
2
1
1
0.4
0.4
0.2
0.2
0.1
0.04
0.02
0.1
SD403C..S15C Series
Trapezoid al Pulse
SD403. .S15C Series
Sinu soidal Pu lse
TJ
= 125°C, V RRM= 11 20V
TJ = 125°C , VRRM= 1120V
tp
d v/dt = 1000V/µs ; di/dt= 50A/µ s
tp
dv/d t = 1000V/µ s
1 E1
1 E 2
1 E 3
1 E4
1E1
1 E2
1 E3
1 E4
P u lse Ba sew id th (µ s)
Pu lse Ba se w id th (µ s)
Fig. 18 - Maximum Total Energy Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
SD
40
3
C
16 S15
C
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
C = PUK case DO-200AA
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95248
Document Number: 93175
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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