SD453R20S20MSC [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 400A, 2000V V(RRM), Silicon, ROHS COMPLIANT, CERAMIC, B-8, 1 PIN;
| 型号： | SD453R20S20MSC |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 400A, 2000V V(RRM), Silicon, ROHS COMPLIANT, CERAMIC, B-8, 1 PIN 软恢复二极管 快速软恢复二极管 高压大功率快速软恢复电源 高压大电源 高功率电源 |
| 文件： | 总11页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD453N/R Series
Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 400/450 A
FEATURES
• High power fast recovery diode series
• 2.0 to 3.0 µs recovery time
• High voltage ratings up to 2500 V
• High current capability
RoHS
COMPLIANT
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version case style B-8
• Maximum junction temperature 150 °C
• RoHS complaint
B-8
• Lead (Pb)-free
• Designed and qualified for industrial level
PRODUCT SUMMARY
IF(AV)
400/450 A
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
SD453N/R
PARAMETER
TEST CONDITIONS
UNITS
S20
S30
400
450
A
IF(AV)
IF(RMS)
IFSM
VRRM
trr
TC
70
°C
630
9300
9730
710
9600
50 Hz
60 Hz
Range
A
10 050
1200 to 2500
V
2.0
3.0
µs
TJ
25
°C
TJ
- 40 to 150
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
12
16
20
25
1200
1600
2000
2500
1300
1700
2100
2600
SD453N/R
50
Document Number: 93176
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
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1
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Vishay Semiconductors
FORWARD CONDUCTION
SD453N/R
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
UNITS
S20
S30
400
450
A
°C
A
Maximum average forward current
at case temperature
180° conduction, half sine wave
70
630
55
710
52
Maximum RMS forward current at
case temperature
IF(RMS)
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
9300
9730
7820
8190
432
9600
10 050
8070
8450
460
No voltage
reapplied
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
A
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
395
420
Maximum I2t for fusing
I2t
kA2s
306
326
100 % VRRM
reapplied
279
297
Maximum I2t for fusing
I2t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
4320
4600
kA2s
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
Low level value of threshold voltage
1.00
1.09
0.80
0.95
1.04
0.60
V
High level value of threshold voltage
(I > x IF(AV)), TJ = TJ maximum
Low level value of forward
slope resistance
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
m
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.74
2.20
0.54
1.85
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
Maximum forward voltage drop
VFM
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 150 °C
TEST CONDITIONS
Ipk
SQUARE
PULSE
(A)
IFM
CODE
trr
t
rr AT 25 % IRRM
dI/dt
(A/ s)
Vr
(V)
trr AT 25 % IRRM
Qrr
( C)
Irr
(A)
( s)
( s)
t
dir
dt
Qrr
S20
S30
2.0
3.0
3.5
5.0
250
380
120
150
IRM(REC)
1000
50
- 50
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and
storage temperature range
TJ, TStg
- 40 to 150
0.1
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Not-lubricated threads
0.04
Mounting torque 10 %
Approximate weight
Case style
50
Nm
g
454
See dimensions (link at the end of datasheet)
B-8
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Document Number: 93176
Revision: 08-Apr-08
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.010
0.014
0.017
0.025
0.042
0.008
0.014
0.019
0.026
0.042
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
150
140
130
120
110
100
90
150
140
130
120
110
100
90
SD 453 N/ R. . S20 Se r ie s
thJC
SD 453 N / R. . S30 Se r ie s
thJC
R
(DC) = 0.1 K/ W
R
(DC) = 0.1 K/W
Conduction Angle
Conduction Angle
80
80
180°
60°
70
70
90°
90°
30°
120°
60°
120°
30°
180°
60
60
0
100
200
300
400
500
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
150
140
130
120
110
100
90
150
140
130
120
110
100
90
SD 453 N/ R. . S20 Se rie s
thJC
SD 453 N/ R. . S30 Se r ie s
thJC
R
(DC) = 0.1 K/W
R
(DC) = 0.1 K/W
Conduction Period
Conduction Period
80
80
30°
70
60°
90°
120°
180°
70
60
90°
60°
120°
60
50
DC
600
30°
180°
DC
40
50
0
100 200 300 400 500 600 700
0
200
400
800
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Document Number: 93176
Revision: 08-Apr-08
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3
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Vishay Semiconductors
1000
900
800
700
800
DC
180°
120°
90°
700
180°
120°
600
90°
60°
60°
500
30°
RM S Lim it
30°
600
500
400
300
200
100
0
RMS Lim it
400
300
Conduction Period
Conduction Angle
200
100
0
SD 453 N / R. . S30 Se rie s
T = 150° C
SD 453 N / R. . S20 Se rie s
T = 150°C
J
J
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
0
100 200 300 400 500 600 700 800
Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
Fig. 5 - Forward Power Loss Characteristics
1000
9000
8000
7000
6000
5000
4000
3000
2000
At Any Rated Load Condition And With
DC
180°
120°
90°
Rated V
Applied Following Surge.
900
800
700
600
500
400
300
200
100
0
RRM
Initial T = 150 °C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
60°
30°
RM S Lim it
Conduction Period
SD 453N / R. . S20 Se r ie s
T = 150°C
SD453N/ R..S20 Series
10
J
0
100 200 300 400 500 600 700
Average Forward Current (A)
1
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 6 - Forward Power Loss Characteristics
800
700
600
500
400
300
200
100
0
10000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
9000
180°
120°
90°
Initial T = 150 °C
J
No Voltage Reapplied
8000
7000
6000
5000
4000
3000
2000
Rated V
Reapplied
RRM
60°
RM S Lim it
30°
Conduction Angle
SD 453N / R. . S30 Se rie s
T = 15 0° C
J
SD453N/ R..S20 Series
0.01
0.1
Pulse Tra in Dura t ion (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
1
0
100
200
300
400
500
Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
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Document Number: 93176
Revision: 08-Apr-08
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Vishay Semiconductors
10000
1000
100
9000
8000
7000
6000
5000
4000
3000
2000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 150 °C
J
SD453N/ R..S20 Series
@60 Hz 0.0083 s
@50 Hz 0.0100 s
T = 25° C
J
T = 150°C
J
SD 453 N / R. . S30 Se rie s
10
0.5
1
1.5
InstantaneousForward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
2
2.5
3
3.5
1
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 11 - Maximum Non-Repetitive Surge Current
10000
10000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
9000
SD453N/ R..S30 Series
Initial T = 150 °C
J
No Voltage Reapplied
8000
7000
6000
5000
4000
3000
2000
Rated V
Reapplied
RRM
1000
T = 25°C
J
T = 150°C
J
SD453N/ R..S30 Series
100
0.5
1
1.5
InstantaneousForward Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
2
2.5
3
3.5
4
0.01
0.1
Pulse Train Duration (s)
1
Fig. 12 - Maximum Non-Repetitive Surge Current
1
Steady State Value:
R
= 0.1 K/W
thJC
(DC Operation)
0.1
0.01
SD453N/ R..S20/ S30 Series
0.001
0.001
0.01
0.1
Sq u a re Wa v e Pu l se D u ra t io n ( s)
1
10
Fig. 15 - Thermal Impedance ZthJC Characteristic
Document Number: 93176
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
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5
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Vishay Semiconductors
100
800
700
600
500
400
300
200
100
0
V
I
= 1000 A
FM
Sin e Pu lse
FP
T = 150°C
J
I
80
500 A
60
40
20
150 A
T = 25° C
J
SD 453N/ R. . S20 Se r ie s
T = 150 °C; V > 100V
SD 453 N/ R. . S20 Se rie s
800 1200 1600 2000
J
r
0
0
400
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Rise Of Forward Current - di/dt (A/us)
Fig. 16 - Typical Forward Recovery Characteristics
Fig. 19 - Recovery Charge Characteristics
100
450
I
= 1000 A
V
FM
FP
T = 150 ° C
J
400
350
300
250
200
150
100
50
Sine Pulse
I
80
60
40
20
0
500 A
150 A
T = 25 ° C
J
SD 453 N/ R. . S20 Se r ie s
T = 150 °C; V > 100V
SD 453 N / R. . S30 Se rie s
1200 1600 2000
r
J
0
0
400
800
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Rise Of Forward Current - di/dt (A/us)
Fig. 17 - Typical Forward Recovery Characteristics
Fig. 20 - Recovery Current Characteristics
6
7
SD 453 N/ R. . S20 Se rie s
SD453N/ R..S30 Series
6.5
T = 150 °C; V > 100V
5.5
5
T = 150 °C, V > 100V
r
r
J
J
6
5.5
I
= 1000 A
4.5
4
I
= 1000 A
FM
Sin e Pu lse
FM
Sin e Pu lse
5
4.5
4
500 A
150 A
500 A
150 A
3.5
3
3.5
3
2.5
2
2.5
2
10
100
1000
10
100
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 18 - Recovery Time Characteristics
Fig. 21 - Recovery Time Characteristics
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Document Number: 93176
Revision: 08-Apr-08
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Vishay Semiconductors
1E4
1200
1000
800
600
400
200
0
I
= 1000 A
FM
Sin e Pu lse
1000
600
400
1500
2000
3000
4000
200
100
50 Hz
500 A
1E3
SD 453 N/ R.. S20 Se rie s
Sin u so id a l Pu lse
T = 70°C, VRRM = 800V
dCv/dt = 1000V/us
150 A
6000
10000
tp
SD453N/ R..S30 Series
T = 150 °C; V > 100V
r
J
1E2
1E1
1 E2
1E3
1E4
0
50 100 150 200 250 300
Pulse Ba sewid t h (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 22 - Recovery Charge Characteristics
Fig. 25 - Frequency Characteristics
1E4
1E3
1E2
550
I
= 1000 A
500
450
400
350
300
250
200
150
100
50
FM
Sin e Pu lse
10 joulesper pulse
6
4
500 A
2
150 A
1
0.8
0.6
0.4
SD 4 53 N/ R. . S20 Se ri e s
Trapezoidal Pulse
SD 453N / R. . S30 Se r ie s
T = 150 °C; V > 100V
T = 150°C, VRRM = 800V
J
r
J
tp
dv/dt = 1000V/µs; di/dt = 300A/µs
0
1E1
1E2
1E3
1E4
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
Pulse Ba se w id t h ( µs)
Fig. 23 - Recovery Current Characteristics
Fig. 26 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1E2
1E4
1E3
1E2
10 joulesper pulse
6
tp
4
2
1
0.6
0.4
200 100
50 Hz
400
600
0.2
1000
1500
2000
3000
4000
6000
0.1
SD 453 N/ R.. S20 Se rie s
Tra p e zo i d a l Pu l se
T = 70°C, VRRM = 800V
dCv/dt = 1000V/us,
d i/ dt = 300A/us
SD 4 5 3 N / R.. S2 0 Se r ie s
Sinusoidal Pulse
T = 150°C, VRRM = 800V
dv/dt = 1000V/ µs
J
tp
1E1
1E2
1E3
1E4
1E1
1E2
Pulse Ba se w id t h (µs)
Fig. 27 - Frequency Characteristics
1E3
1E4
Pulse Ba se w id t h ( µs)
Fig. 24 - Maximum Total Energy Loss
Per Pulse Characteristics
Document Number: 93176
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
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7
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Vishay Semiconductors
1E4
1E4
SD 4 5 3 N / R.. S2 0 Se r ie s
Trapezoidal Pulse
T = 1 5 0 ° C , V = 8 0 0 V
J
RRM
dv/dt = 1000V/µs
di/ dt = 100A/µs
6000
10 joulesper pulse
400
200
100
6
50 Hz
1000
1500
2000
3000
4
2
1
tp
0.6
1E3
1E3
1E2
0.4
SD 453 N/ R.. S3 0 Se rie s
Sin u so id a l Pu lse
T = 70°C, VRRM = 800V
dCv/dt = 1000V/us
4000
6000
0.2
tp
1E2
1E1
1E2
1E3
1E4
1E1
1E2
Pulse Ba sew id th (µs)
Fig. 31 - Frequency Characteristics
1E3
1E4
Pulse Ba sewid th (µs)
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1E2
1E4
1E3
1E2
10 joulesper pulse
tp
6
4
2
1000
600
400
200
100
50 Hz
1
1500
2000
3000
4000
0.8
0.6
SD453N/R..S20 Series
Tr a p e zo id a l Pu lse
SD453N/R..S30 Series
Trapezoidal Pulse
T = 150°C, VRRM = 800V
T = 70°C, VRRM = 800V
C
6000
dv/dt = 1000V/us,
di/ dt = 100A/us
J
tp
dv/dt = 1000V/µs; di/dt = 300A/µs
1E1
1E2
Pu lse Ba se w id t h (µs)
Fig. 29 - Frequency Characteristics
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id th (µs)
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1E2
1E4
1E3
1E2
10 joules per pulse
6
4
tp
2
1
0.8
0.6
0.4
100
200
50 Hz
400
0.2
600
1000
0.1
2000
3000
4000
SD 4 5 3N / R. . S30 Se rie s
Tr a p e zo id a l Pu lse
T = 70°C, VRRM = 800V
dv/dt = 1000V/us,
di/dt = 300A/us
SD453N/ R...S30 Series
Sinusoidal Pulse
T = 150°C, VRRM = 800V
dJv/dt = 1000V/µs
tp
1E1
1E2
1E3
1E4
1E1
1E2
Pulse Ba sew id th (µs)
Fig. 33 - Frequency Characteristics
1E3
1E4
Pulse Ba sew id t h (µs)
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
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Document Number: 93176
Revision: 08-Apr-08
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Vishay Semiconductors
1E4
1E3
1E2
1E4
10 joulesper pulse
tp
6
4
2
50 Hz
200 100
400
1
600
1000
0.8
1E3
0.6
1500
2000
3000
4000
0.4
SD453N/ R. . S30 Series
Tra p e zo i d a l Pu l se
T = 70°C, VRRM = 800V
dv/dt = 1000V/us,
di/ dt = 100A/ us
SD 4 5 3 N / R. . S3 0 Se r ie s
Trapezoidal Pulse
C
T = 1 5 0 ° C , V RRM = 8 0 0 V
J
tp
dv/ dt = 1000V/µs; di/dt = 100A/ µs
1E2
1E1
1E2
Pulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id t h (µs)
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
SD
45
2
3
N
25 S30
P
S
C
1
3
4
5
6
7
8
9
-
Diode
1
2
3
4
-
-
-
Essential part number
3 = Fast recovery
N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
-
-
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 x 1.5
5
6
7
-7
8
S = Isolated lead with silicon sleeve
(red = Reverse polarity; blue = Normal polarity)
None = Not isolated lead
T = Threaded top terminal 3/8" 24UNF-2A
C = Ceramic housing
-
9
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95303
Document Number: 93176
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
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9
Outline Dimensions
Vishay Semiconductors
B-8
DIMENSIONS in millimeters (inches)
Ceramic housing
26 (1.023) MAX.
5 (0.20) 0.3 (0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
C.S. 70 mm2
245 (9.645)
255 (10.04)
38 (1.5)
DIA. MAX.
80 (3.15)
MAX.
115 (4.52) MIN.
47 (1.85)
MAX.
21 (0.83) MAX.
SW 45
27.5 (1.08)
MAX.
3/4"-16UNF-2A *
*For metric device: M24 x 1.5 - length 21 (0.83) MAX.
contact factory
Document Number: 95303
Revision: 11-Apr-08
For technical questions, contact: indmodules@vishay.com
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1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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