SD600R08PC [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 600A, 800V V(RRM), Silicon, ROHS COMPLIANT, CERAMIC, B-8, 1 PIN;
| 型号： | SD600R08PC |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 600A, 800V V(RRM), Silicon, ROHS COMPLIANT, CERAMIC, B-8, 1 PIN 高压大电源 高功率电源 二极管 |
| 文件： | 总9页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD600N/R Series
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 600 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC types
RoHS
COMPLIANT
• Compression bonded encapsulations
• RoHS complaint
• Lead (Pb)-free
B-8
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• High power drives
PRODUCT SUMMARY
IF(AV)
600 A
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
SD600N/R
PARAMETER
TEST CONDITIONS
UNITS
04 to 20
22 to 32
600
940
A
IF(AV)
IF(RMS)
IFSM
TC
92
54
°C
50 Hz
60 Hz
50 Hz
60 Hz
Range
13 000
13 600
10 500
11 000
A
845
551
I2t
kA2s
772
503
VRRM
TJ
400 to 2000
- 40 to 180
2200 to 3200
- 40 to 150
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
04
08
12
16
20
22
28
32
400
800
500
900
1200
1600
2000
2200
2800
3200
1300
1700
2100
2300
2900
3300
SD600N/R
35
Document Number: 93551
Revision: 17-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
FORWARD CONDUCTION
SD600N/R
04 to 20 22 to 32
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
600
A
°C
A
92
54
Maximum average forward current
at case temperature
IF(AV)
IF(RMS)
IFSM
180° conduction, half sine wave
570
375
100
940
°C
Maximum RMS forward current
DC at TC = 75 °C (04 to 20), TC = 36 °C (25 to 32)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
13 000
13 600
10 900
11 450
845
10 500
11 000
8830
9250
551
No voltage
reapplied
A
Maximum peak, one-cycle forward,
non-repetitive surge current
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
772
503
Maximum I2t for fusing
I2t
kA2s
598
390
100 % VRRM
reapplied
546
356
Maximum I2t for fusing
I2t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
8450
5510
kA2s
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
Low level value of threshold voltage
0.78
0.87
0.35
0.84
0.88
0.40
V
High level value of threshold voltage
(I > x IF(AV)), TJ = TJ maximum
Low level value of forward
slope resistance
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
m
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.31
1.31
0.38
1.44
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
Maximum forward voltage drop
VFM
V
THERMAL AND MECHANICAL SPECIFICATIONS
SD600N/R
04 to 20 22 to 32
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 180 - 40 to 150
°C
Maximum storage temperature range
TStg
RthJC
- 55 to 200
0.1
Maximum thermal resistance,
junction to case
DC operation
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Not-lubricated threads
0.04
50
Maximum allowed
mounting torque 10 %
Nm
g
Approximate weight
Case style
454
B-8
See dimensions (link at the end of datasheet)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93551
Revision: 17-Apr-08
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
0.012
0.014
0.017
0.025
0.042
0.008
0.014
0.019
0.026
0.042
180°
120°
90°
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
150
140
130
120
110
100
90
180
170
160
150
140
130
120
110
100
90
SD600N/ RSeries(2500V to 3200V)
SD600N/ RSeries(400V to 2000V)
(DC) = 0.1 K/ W
R
(DC) = 0.1 K/W
R
thJC
thJC
Conduction Angle
Conduction Angle
30°
60°
80
90°
70
120°
30°
60°
90°
180°
60
120°
180°
80
50
0
100 200 300 400 500 600 700
0
100 200 300 400 500 600 700
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
180
170
160
150
140
130
120
110
100
90
150
140
130
120
110
100
90
SD 600N / R Se rie s ( 2500V t o 3200V )
SD600N/ RSeries(400V to 2000V)
R
(DC) = 0.1 K/ W
thJC
R
(DC) = 0.1 K/W
thJC
Conduction Period
Conduction Period
80
70
30°
30°
60
50
60°
60°
90°
120°
90°
120°
80
40
30
180°
600
Average Forward Current (A)
180°
600
Average Forward Current (A)
DC
DC
800
70
0
200
400
800
1000
0
200
400
1000
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Document Number: 93551
Revision: 17-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
800
R
t
h
S
A
=
0
700
600
500
400
300
200
100
0
180°
120°
90°
.
0
2
K
/
W
0
.
1
-
D
K
/
e
W
l
t
60°
a
R
RM S Lim it
30°
0
.
4
K
/
W
Conduction Angle
SD600N/ RSeries
(400V to 2000V)
T = 180°C
J
0
100 200 300 400 500
Average Forward Current (A)
6
0
0
40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
1100
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
0
60°
.
0
8
K
/
30°
W
RM S Lim it
Conduction Period
0
.
4
K
/
W
SD600N/ RSeries
(400V to 2000V)
T = 180°C
J
0
200
400
600
800
1
0
00 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Average Forward Current (A)
900
800
700
600
500
400
300
200
100
0
180°
120°
90°
60°
30°
RM S Lim it
0
.
2
K
/
W
W
Conduction Angle
0
.
4
K
/
SD600N/ RSeries
(2500V to 3200V)
T = 150°C
J
50
75
100
125
150
0
100 200 300 400 500 600
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
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4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93551
Revision: 17-Apr-08
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
1100
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
t
h
S
A
60°
0
.
0
4
30°
K
/
0
W
.
0
6
K
/
W
0
RMS Lim it
.
1
K
/
W
Conduction Period
0
.
4
SD600N/ RSeries
(2500V to 3200V)
T = 150°C
J
K
/
W
2
50
75
100
125
150
0
100 200 300 400 500 600 700 800 900
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
12000
10000
8000
6000
4000
2000
10000
8000
6000
4000
2000
At Any Rated Load Condition And With
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Rated V
RRM
Applied Following Surge.
Initial T = 180°C
Initial T = 150°C
J
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
@60 Hz 0.0083 s
@50 Hz 0.0100 s
SD 6 00N / R Se r ie s
(2500V to 3200V)
SD600N/ RSeries
(400V to 2000V)
1
10
100
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 11 - Maximum Non-Repetitive Surge Current
14000
12000
Maximum Non Repetitive Surge Current
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Initial T = 180 °C
VersusPulse Train Duration.
Initial T = 150 °C
12000
10000
8000
6000
4000
2000
J
J
10000
No Voltage Reapplied
No Voltage Reapplied
Rated V
Reapplied
Rated V
Reapplied
RRM
RRM
8000
6000
4000
2000
SD 600N / R Se r ie s
(400V to 2000V)
SD 600N / R Se r ie s
(2500V to 3200V)
0.01
0.1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
1
0.01
0.1
Pulse Train Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
1
Document Number: 93551
Revision: 17-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
10000
10000
T = 25° C
J
T = 25°C
J
T = 180°C
J
T = 150°C
J
1000
1000
100
SD600N/ R Se r ie s
(400V to 2000V)
SD 6 00N / R Se r ie s
(2500V to 3200V)
100
0
1
2
3
4
0
1
2
3
4
5
InstantaneousForward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
InstantaneousForward Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
1
St e a d y St a t e V a lu e :
R
= 0.1 K/ W
thJC
(DC Operation)
0.1
0.01
SD 600N/ R Se ri e s
0.001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 15 - Thermal Impedance ZthJC Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93551
Revision: 17-Apr-08
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
SD
60
0
N
32
P
C
1
2
3
4
5
6
7
1
-
-
-
-
Diode
2
3
4
Essential part number
0 = Standard recovery
N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5
6
7
-
-
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
P = Stud base B-8 3/4" 16UNF-2A
C = Ceramic cap
For metric device M24 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95303
Document Number: 93551
Revision: 17-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
Outline Dimensions
Vishay Semiconductors
B-8
DIMENSIONS in millimeters (inches)
Ceramic housing
26 (1.023) MAX.
5 (0.20) 0.3 (0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
C.S. 70 mm2
245 (9.645)
255 (10.04)
38 (1.5)
DIA. MAX.
80 (3.15)
MAX.
115 (4.52) MIN.
47 (1.85)
MAX.
21 (0.83) MAX.
SW 45
27.5 (1.08)
MAX.
3/4"-16UNF-2A *
*For metric device: M24 x 1.5 - length 21 (0.83) MAX.
contact factory
Document Number: 95303
Revision: 11-Apr-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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