SD603C12S10C [VISHAY]
SD603C04S10C;
| 型号： | SD603C12S10C |
| 厂家： | 
VISHAY |
| 描述： | SD603C04S10C 整流二极管 快速恢复二极管 |
| 文件： | 总10页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD603C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 600 A
FEATURES
• High power FAST recovery diode series
• 1.0 to 2.0 µs recovery time
RoHS
COMPLIANT
• High voltage ratings up to 2200 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
B-43
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC B-43
• Maximum junction temperature 125 °C
• Lead (Pb)-free
PRODUCT SUMMARY
• Designed and qualified for industrial level
IF(AV)
600 A
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
600
UNITS
A
°C
A
IF(AV)
Ths
Ths
55
942
IF(RMS)
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
Range
8320
IFSM
A
8715
346
I2t
kA2s
316
VRRM
trr
400 to 2200
1.0 to 2.0
25
V
µs
TJ
°C
TJ
- 40 to 125
Document Number: 93178
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD603C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 600 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
04
08
10
12
14
16
20
22
400
800
500
900
SD603C..S10C
1000
1200
1400
1600
2000
2200
1100
1300
1500
1700
2100
2300
45
SD603C..S15C
SD603C..S20C
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
600 (300)
55 (75)
942
UNITS
A
Maximum average forward current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
°C
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
8320
8715
7000
7330
346
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive forward current
IFSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
316
Maximum I2t for fusing
I2t
kA2s
245
100 % VRRM
reapplied
224
Maximum I2√t for fusing
I2√t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
3460
1.36
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
V
1.81
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
0.87
mΩ
rf2
0.67
VFM
Ipk = 1885 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
2.97
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
Ipk
CODE
IFM
t
rr AT 25 % IRRM
(µs)
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
Qrr
(µC)
Irr
(A)
trr
(µs)
t
dir
dt
Qrr
S10
S15
1.0
1.5
2.0
3.2
45
87
34
51
IRM(REC)
1000
25
- 30
S20
2.0
3.5
97
55
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93178
Revision: 04-Aug-08
SD603C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 600 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
0.076
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
K/W
0.038
Mounting force, 10 %
Approximate weight
Case style
9800 (1000)
83
N (kg)
g
See dimensions - link at the end of datasheet
B-43
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.006
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.007
0.008
0.010
0.015
0.025
0.005
0.008
0.011
0.016
0.026
0.005
0.008
0.011
0.015
0.025
0.008
0.010
TJ = TJ maximum
K/W
60°
0.015
30°
0.026
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93178
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD603C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 600 A
Vishay High Power Products
130
130
120
SD 603C . . C Se r ie s
SD603C..C Series
(Single Side Cooled)
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.076 K/W
R
(DC) = 0.038 K/W
thJ-hs
thJ-hs
110
100
90
Conduction Period
Conduction Angle
80
30°
70
60°
90°
120°
180°
60
80
60°
180°
90°
30°
50
120°
DC
70
40
0
50 100 150 200 250 300 350
Average Forward Current (A)
0
200
400
600
800
1000
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1800
1600
1400
1200
1000
800
130
120
110
100
90
SD 60 3C . . C Se r ie s
180°
120°
90°
(Single Side Cooled)
R
(DC) = 0.076 K/ W
thJ-hs
60°
30°
RMS Lim it
Conduction Period
600
30°
80
Conduction Angle
SD603C..C Series
60°
400
90°
120°
70
200
T = 125°C
J
180°
DC
400
0
60
0
100 200 300 400 500 600
Average Forward Current (A)
0
100
200
300
500
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
2500
130
120
110
100
90
DC
180°
120°
90°
SD 603 C . . C Se rie s
(Double Side Cooled)
R
(DC) = 0.038 K/W
2000
1500
1000
500
0
thJ-hs
60°
30°
Conduction Angle
RM S Lim it
80
Conduction Period
SD603C .. C Se rie s
70
30°
60°
90°
T = 125°C
J
120°
60
180°
50
0
200
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
400
600
800
1000
0
100 200 300 400 500 600 700
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93178
Revision: 04-Aug-08
SD603C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 600 A
Vishay High Power Products
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
10000
1000
100
At Any Rated Load Condition and With
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
T = 25 °C
J
T = 125 °C
J
SD603C..C Series
SD603C..C Series
10
.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5
InstantaneousForward Voltage (V)
1
10
100
Number of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
9000
0.1
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
8000
Initial T = 125 °C
J
SD 603C . . C Se rie s
No Voltage Reapplied
7000
6000
5000
4000
3000
2000
Rated V
Reapplied
RRM
0.01
St e a d y St a t e V a lu e :
R
= 0.076 K/ W
thJ-hs
(Single Side Cooled)
R
= 0.038 K/ W
SD 603C . . C Se rie s
thJ-hs
(Double Side Cooled)
(DC Operation)
0.001
0.001 0.01
0.01
0.1
Pulse Train Duration (s)
1
0.1
1
10
100
Sq u a r e Wa v e Pu lse D u ra t io n ( s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100
V
FP
I
T = 12 5° C
J
80
60
40
20
0
T = 25° C
J
SD 603C . . S20 C Se ri e s
0
200
400
Ra t e O f f Rise O f Fo rw a rd C urre n t d i/ d t ( A / use c )
Fig. 11 - Typical Forward Recovery Characteristics
600
800
1000
1200
1400
1600
1800
2000
Document Number: 93178
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
SD603C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 600 A
Vishay High Power Products
2.2
4
SD603C..S10C Series
SD603C..S15C Series
T = 125 °C; V = 30V
T = 125 °C; V = 30V
r
J
2.1
2
J
r
I
= 1000 A
FM
3.5
3
Sq u a re Pu lse
I
= 1000 A
FM
Sq u a r e Pu lse
1.9
1.8
1.7
1.6
500 A
500 A
250 A
2.5
250 A
2
10
10
100
100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Recovery Time Characteristics
200
130
I
= 1000 A
FM
120
110
100
90
I
= 1000 A
Sq u a re Pu lse
180
160
140
120
100
80
FM
Sq u a r e Pu lse
500 A
500 A
250 A
80
250 A
70
60
50
40
SD 603C . . S15C Se r ie s
T = 125 °C; V = 30V
SD 603C . . S10C Se rie s
T = 125 °C; V = 30V
60
30
r
J
r
J
20
40
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra t e O f Fa ll Of Fo rw a rd C urre nt - d i/ d t (A/ µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 13 - Recovery Charge Characteristics
Fig. 16 - Recovery Charge Characteristics
120
140
I
= 1000 A
I
= 1000 A
FM
FM
130
120
110
100
90
110
100
90
80
70
60
50
40
30
20
10
Sq u a re Pu lse
Sq u a re Pu lse
500 A
250 A
500 A
250 A
80
70
60
50
SD 603C . . S15C Series
T = 125 °C; V = 30V
40
SD 603C . . S10C Se r ie s
T = 125 ° C ; V = 30V
J
r
J
r
30
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra t e O f Fa ll O f Fo rwa rd C urre n t - d i/ d t (A/ µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 14 - Recovery Current Characteristics
Fig. 17 - Recovery Current Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93178
Revision: 04-Aug-08
SD603C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 600 A
Vishay High Power Products
4.5
4
200
SD603C..S20C Series
I
= 1000 A
FM
180
160
140
120
100
80
T = 125 °C; V = 30V
J
r
Sq u a re Pu lse
I
= 1000 A
FM
3.5
3
500 A
Sq u a re Pu lse
250 A
500 A
250 A
2.5
2
SD 60 3 C . . S2 0C Se r ie s
T = 125 °C; V = 30V
60
J
r
40
10
100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
150
140
130
120
110
100
90
I
= 1000 A
FM
Sq u a re Pu lse
500 A
250 A
80
70
60
50
40
30
SD 603C . . S20C Se r ie s
T = 125 °C; V = 30V
r
J
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 20 - Recovery Current Characteristics
1E4
1E3
1E2
1E1
20 joulesper pulse
20 joulesper pulse
10
10
4
4
2
1
2
1
0.4
0.4
0.2
0.1
0.2
0.04
0.02
0.01
0.1
SD603C..S10C Series
Trapezoidal Pulse
SD603C..S10C Series
Sinusoidal Pulse
T = 125°C, VRRM = 1120V
J
T = 1 2 5 ° C , VRRM = 1 1 2 0 V
J
tp
dv/dt = 1000V/µs; di/dt=50A/µs
tp
dv/dt = 1000V/µs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Ba se w id t h (µs)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
For technical questions, contact: ind-modules@vishay.com
Document Number: 93178
Revision: 04-Aug-08
www.vishay.com
7
SD603C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 600 A
Vishay High Power Products
1E4
20 joulesper pulse
20 joulesper pulse
10
10
4
2
4
1
2
1E3
1E2
1E1
0.4
0.2
1
0.4
0.1
0.04
0.2
0.02
SD603C..S15C Series
Trapezoidal Pulse
J
SD 6 0 3 C . . S1 5 C Se rie s
Sin u so id a l Pu lse
T = 1 25° C , VRRM = 17 60 V
J
dv/dt = 1000V/µs
T = 125°C, VRRM = 1760V
tp
dv/dt = 1000V/µs; di/dt=50A/µs
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basew id th (µs)
Pulse Ba se w id t h (µs)
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
1E1
20 joulesper pulse
10
20 joulesperpulse
10
4
2
4
2
1
1
0.4
0.4
0.2
0.1
0.04
SD 6 0 3 C . . S2 0 C Se r ie s
Trapezoidal Pulse
SD 6 0 3 C . . S20C Series
Sinusoidal Pulse
T = 125°C, VRRM = 1760V
J
T = 125°C, VRRM = 1760V
J
tp
dv/dt = 1000V/µs; di/dt=50A/µs
tp
dv/dt = 1000V/µs
1E1
1E2
Pulse Basew id th (µs)
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93178
Revision: 04-Aug-08
SD603C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 600 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
SD
60
3
C
22 S20
C
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
C = PUK case B-43
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95249
Document Number: 93178
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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