SE10DG-M3/I [VISHAY]
DIODE GEN PURP 400V 3A TO263AC;
| 型号： | SE10DG-M3/I |
| 厂家： | 
VISHAY |
| 描述： | DIODE GEN PURP 400V 3A TO263AC |
| 文件： | 总5页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SE10DB, SE10DD, SE10DG, SE10DJ
www.vishay.com
Vishay General Semiconductor
Surface-Mount ESD Capability Rectifiers
FEATURES
eSMP® Series
SMPD (TO-263AC)
Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• ESD capability
K
• AEC-Q101 qualified
1
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
2
Top View
Bottom View
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SE10DX
Anode 1
K
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
Anode 2
Cathode
ADDITIONAL RESOURCES
MECHANICAL DATA
3
D
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
3D Models
Base P/N-M3
-
halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3
PRIMARY CHARACTERISTICS
- halogen-free, RoHS-compliant, and
AEC-Q101 qualified
IF(AV)
10 A
VRRM
100 V, 200 V, 400 V, 600 V
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
IFSM
VF at IF = 10 A (TA = 125 °C)
IR
110 A
0.96 V
15 μA
Polarity: as marked
TJ max.
175 °C
Package
SMPD (TO-263AC)
Single
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SE10DB
SE10DD
SE10DG
SE10DJ
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
200
400
600
V
(1)
IF
10
Maximum DC forward current
A
(2)
IF
3.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
110
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
°C
Notes
(1)
(2)
With heatsink
Free air, mounted on recommended copper pad area
Revision: 26-Feb-2020
Document Number: 89983
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE10DB, SE10DD, SE10DG, SE10DJ
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.95
1.04
0.85
0.96
-
MAX.
UNIT
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
-
1.15
-
TA = 25 °C
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
1.10
15
150
-
TA = 25 °C
(2)
Reverse current
Rated VR
IR
μA
TA = 125 °C
22
Typical reverse recovery time
Typical junction capacitance
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
4.0 V, 1 MHz
trr
3000
67
ns
CJ
-
pF
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
SE10DB
SE10DD
SE10DG
SE10DJ
UNIT
(1)(2)
RθJA
60
Typical thermal resistance
°C/W
(3)
RθJC
1.6
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RθJA - junction to ambient
With infinite heatsink
(2)
(3)
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
VALUE
AEC-Q101-001
Human body model (contact mode) C = 100 pF, R = 1.5 kΩ
VC
H3B
> 8 kV
ORDERING INFORMATION (Example)
UNIT WEIGHT PREFERRED PACKAGE
BASE
QUANTITY
STANDARD
PREFERRED P/N
DELIVERY MODE
(g)
CODE
SMPD (TO-263AC)
SMPD (TO-263AC)
SE10DJ-M3/I
0.54
0.54
I
I
2000/reel
2000/reel
13" diameter plastic tape and reel
13" diameter plastic tape and reel
SE10DJHM3/I (1)
Note
(1)
AEC-Q101 qualified
Revision: 26-Feb-2020
Document Number: 89983
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE10DB, SE10DD, SE10DG, SE10DJ
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
11
RthJC= 1.6oC/W
TJ = 175 °C
10
9
8
7
6
5
4
3
2
1
0
100
10
TJ = 125 °C
TJ = 150 °C
1
TJ = 75 °C
0.1
Free air, TA, RthJA= 60oC/W
TJ = 25 °C
TJ = -40 °C
0.01
0.001
0.0001
0
25
50
75
100
125
150
175
10 20 30 40 50 60 70 80 90 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
1000
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
TJ = 25 °C
f = 1.0 MHz
D = 0.8
D = 0.5
Vsig = 50 mVp-p
D = 0.3
D = 0.2
D = 1.0
D = 0.1
100
5.0
4.0
T
3.0
2.0
1.0
D = tp/T
tp
10
0.0
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10 11 12
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
100
10
Junction to Ambient
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
10
1
TJ = 75 °C
TJ = 25 °C
TJ = -40 °C
0.1
0.01
1
0.01
0.1
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 26-Feb-2020
Document Number: 89983
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE10DB, SE10DD, SE10DG, SE10DJ
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPD (TO-263AC)
0.402 (10.20)
0.386 (9.80)
0.059 (1.50) REF.
0.071 (1.80)
0.063 (1.60)
0.020 (0.52)
0.011 (0.27)
0.048 (1.21)
0.032 (0.81)
0.354 (8.99)
0.338 (8.59)
0.509 (12.93)
0.485 (12.33)
0 to 0.01
(0 to 0.254)
0.069 (1.74)
0.053 (1.34)
0.063 (1.60)
0.047 (1.20)
0.020 (0.52)
0.011 (0.27)
0.052 (1.23)
0.028 (0.72)
0.200
(5.08)
NOM.
Mounting Pad Layout
0.420 (10.66) MIN.
0.339 (8.60)
0.323 (8.20)
0.276 (7.00)
0.260 (6.60)
0.330
(8.38)
REF.
0.194
(4.93)
NOM.
0.604 (15.33)
0.525 (13.33)
0.120 (3.05) REF.
0.105 (2.67)
0.095 (2.41)
0.080 (2.03) MIN.
Revision: 26-Feb-2020
Document Number: 89983
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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