SFH608-3-X001 [VISHAY]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6;
| 型号： | SFH608-3-X001 |
| 厂家： | 
VISHAY |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6 输出元件 光电 |
| 文件： | 总3页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH608
5.3 KV, TRIOS, Low Current
Phototransistor Optocoupler
FEATURES
• Very High CTR at I =1.0 mA, V =0.5 V
Dimensions in inches (mm)
F
CE
– SFH608-2, 63-125%
pin one ID
2
1
3
– SFH608-3, 100-200%
– SFH608-4, 160-320%
– SFH608-5, 250-500%
6
5
4
Anode
Cathode
NC
Base
1
2
3
.248 (6.30)
.256 (6.50)
Collector
Emitter
• Specified Minimum CTR at I =0.5 mA,
F
V
=1.5 V: ≥ 32% (typ. 120%)
CE
4
5
6
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• High Collector-Emitter Voltage V
• Isolation Test Voltage: 5300 V
• Low Current Input
• Low Coupling Capacitance
.335 (8.50)
.343 (8.70)
=55 V
CEO
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
RMS
.130 (3.30)
.150 (3.81)
• High Common Mode Transient Immunity
• Phototransistor Optocoupler in 6 Pin DIP
Package
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.300–.347
.031 (0.80)
.035 (0.90)
• Field Effect Stable byTRIOS (TRansparent IOn
Shield)
.018 (0.45)
.022 (0.55)
.100 (2.54) typ.
(7.62–8.81)
VE
D
•
VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
Maximum Ratings (T =25°C)
Emitter
A
APPLICATIONS
• Telecommunications
• Industrial Controls
• Office Machines
Reverse Voltage ................................................................................... 6.0 V
DC Forward Current ...........................................................................50 mA
Surge Forward Current (tp≤10 µs) .......................................................2.5 A
Total Power Dissipation .................................................................... 70 mW
Detector
• Microprocessor System Interfaces
Collector-Emitter Voltage ...................................................................... 55 V
Collector-Base Voltage.......................................................................... 55 V
Emitter-Base Voltage ........................................................................... 7.0 V
Collector Current............................................................................... 50 mA
Surge Collector Current (tp≤1.0 ms)................................................100 mA
Total Power Dissipation .................................................................. 150 mW
Isolation Test Voltage (between emitter and detector, refer
DESCRIPTION
The SFH 608 is an optocoupler designed for high
current transfer ratio at low input currents with the
output transistor saturated. This makes the device
ideal for low current switching applications. The
SFH608 is packaged in a six pin plastic DIP.
to climate DIN 40046 part 2 Nov. 74) (t=1.0 s)........................5300 V
RMS
Creepage ...................................................................................... ≥7.0 mm
Clearance...................................................................................... ≥7.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1...................................................... 175
Isolation Resistance
12
V =500 V, T =25°C .................................................................... ≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C ................................................................. ≥10
IO
A
Storage Temperature Range.............................................–55°C to +150°C
Operating Temperature Range .........................................–55°C to +100°C
Junction Temperature......................................................................... 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane≥1.5 mm)................................................ 260°C
Document Number: 83664
Revision 17-August-01
www.vishay.com
2–225
Table 1. Characteristics (T =25°C, unless otherwise specified)
Figure 2. Switching Times T =25°C,
A
A
I =1.0 mA, V =5.0 V, t , t , t
, t , =f(R )
F
CC
ON
R
OFF
F L
Symbol
Typ
Unit
Condition
Emitter
Forward Voltage
Reverse Voltage
Reverse Current
Capacitance
V
1.1 (≤1.5)
(≥ 6)
V
I =5.0 mA
F
F
I
V
I = 10 µA
R
R
I
0.01 (≤10)
25
µA
pF
K/W
V =6.0 V
R
R
C
V =0 V, f=1.0 MHz
O
R
Thermal Resistance
Detector
R
1070
—
thJA
Voltage, Collector-Emitter
Voltage, Emitter-Base
Capacitance
V
V
≥55
≥7.0
10
V
I
I
=10 µA
=10 µA
CEO
EBO
CE
V
EB
C
C
C
pF
pF
pF
K/W
V
V
V
=5.0 V, f=1.0 MHz
=5.0 V, f=1.0 MHz
=5.0 V, f=1.0 MHz
CE
CB
EB
CE
CE
CE
Capacitance
16
Capacitance
10
Thermal Resistance
Package
R
500
—
thJA
Figure 3. Current Transfer Ratio (typ.)
=0.5 V, C =f(T , I )
V
CE
TR
A
F
Coupling Capacitance
C
0.60
pF
—
C
Coupling Transfer Ratio
SFH 608-2
I /I
63-125
%
%
%
%
%
%
%
%
I =1.0 mA, V =0.5 V
F CE
C
F
F
F
F
75 (≥ 32)
100-200
120 (≥ 50)
160-320
200 (≥ 80)
250-500
300 (≥125)
I =0.5 mA, V =1.5 V
F CE
SFH 608-3
SFH 608-4
SFH 608-5
I /I
I =1.0 mA, V =0.5 V
F CE
C
I =0.5 mA, V =1.5 V
F
F
CE
CEE
CE
I /I
I =1.0 mA, V
=0.5 V
C
I =0.5 mA, V =1.5 V
F
I /I
I =1.0 mA, V =0.5 V
C
F CE
I =0.5 mA, V =1.5 V
F
CE
Saturation Voltage,
Collector-Emitter
SFH 608-2
V
0.25 (≤0.4)
0.25 (≤0.4)
0.25 (≤0.4)
0.25 (≤0.4)
V
V
V
V
I =0.32 mA, I =1.0 mA
C F
CEsat
CEsat
CEsat
CEsat
SFH 608-3
V
V
V
I = 0.5 mA, I =1.0 mA
C F
SFH 608-4
SFH 608-5
I = 0.8 mA, I =1.0 mA
C F
I =1.25 mA, I =1.0 mA
C F
Leakage Current,
Collector-Emitter
I
10 (≤200)
nA
V
=10 V
CE
CEO
Figure 1. Schematic
Figure 4. Current Transfer Ratio (typ.)
=1.5 V, C =f(T , I )
V
CE
TR
A
F
RL
IC
IF
VCC
47 Ω
Table 2. Switching Times
I =2.0 mA (to adjust by I ), R =100 Ω, T =25°C, V =5.0 V
C
F
L
A
CC
Description
Symbol
Values
8.0
Unit
µs
Turn-On Time
Rise Time
t
t
t
t
ON
R
5.0
µs
Turn-Off Time
Fall Time
7.5
µs
OFF
F
7.0
µs
Document Number: 83664
Revision 17-August-01
www.vishay.com
2–226
Figure 11. Transistor Capacitance
Figure 5. Diode Forward Voltage (typ.)
Figure 8. Output cHaracteristics (typ.)
(typ.) T =25°C, f=1.0 MHz, C =f(V )
T =25°C, V =f(I )
T =25°C, I =f(V , I )
A
CE
CE
A
F
F
A
CE
CE
F
C
=f (V ), C =f(V
)
CB
CB
EB
EB
Figure 9. Permissible Forward Cur-
Figure 12. Collector-emitter Leakage
Current I =0, V =10 V, I =f(T )
Figure 6. Diode Forward Voltage (typ.)
rent Diode I =f(T )
I =1.0 mA, V =f(T )
F
A
F
CE
CEO
A
F
F
A
Figure 10. Permissible Power Dissipa-
Figure 7. Output Characteristics (typ.)
tion P =f(T )
T =25°C, I =f(V , I )
tot
A
A
CE
CE
B
Document Number: 83664
Revision 17-August-01
www.vishay.com
2–227
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