SFH610A-1-X001 [VISHAY]
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-4;
| 型号： | SFH610A-1-X001 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-4 输出元件 |
| 文件： | 总3页 (文件大小：421K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH610A/617A
5.3 kV TRIOS Optocoupler
High Reliability
FEATURES
Dimensions in Inches (mm)
• Variety of Current Transfer Ratios at I =10 mA
– SFH610A/617A-1, 40–80%
– SFH610A/617A-2, 63–125%
F
2
1
pin one ID
SFH610A
– SFH610A/617A-3, 100–200%
– SFH610A/617A-4, 160–320%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Withstand Test Voltage, 5300 V
.255 (6.48)
.268 (6.81)
Anode
1
2
Emitter
4
3
Cathode
Collector
3
4
RMS
.179 (4.55)
.190 (4.83)
• High Collector-Emitter Voltage, V
• Low Saturation Voltage
• Fast Switching Times
=70 V
CEO
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
10°
4°
.110 (2.79)
.130 (3.30)
• Low Coupling Capacitance
typ.
.020 (.508 )
.035 (.89)
.050 (1.27)
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54)
SFH617A
• Underwriters Lab File #52744
VE
D
•
VDE 0884 Available with Option 1
Collector
Emitter
Anode 1
4
Cathode
2
3
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
Maximum Ratings
Emitter
Reverse Voltage.........................................................................6.0 V
DC Forward Current.................................................................60 mA
Surge Forward Current (t ≤10 µs) .............................................2.5 A
Total Power Dissipation.........................................................100 mW
Detector
Collector-Emitter Voltage ............................................................70 V
Emitter-Collector Voltage ...........................................................7.0 V
Collector Current .....................................................................50 mA
P
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
Collector Current (t ≤1.0 ms).................................................100 mA
P
tion voltage of 400 V
Specifications subject to change.
or DC.
Total Power Dissipation.........................................................150 mW
Package
RMS
Isolation Test Voltage between Emitter and Detector,
refer to Climate DIN 40046, part 2, Nov. 74................. 5300 V
RMS
Creepage............................................................................ ≥7.0 mm
Clearance ........................................................................... ≥7.0 mm
Insulation Thickness between Emitter and Detector .......... ≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ....................................... ≥175
Isolation Resistance
12
V =500 V, T =25°C......................................................... ≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C....................................................... ≥10
IO
A
Storage Temperature Range ......................................–55 to +150°C
Ambient Temperature Range......................................–55 to +100°C
Junction Temperature..............................................................100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm)....................................260°C
Document Number: 83666
Revision 17-August-01
www.vishay.com
2–228
Characteristics (T =25°C)
A
Description
Symbol
Unit
Condition
Emitter (IR GaAs)
Forward Voltage
V
1.25 (≤1.65)
0.01 (≤10)
13
V
I =60 mA
F
F
Reverse Current
I
µA
pF
K/W
V =6.0 V
R
R
Capacitance
C
V =0 V, f=1.0 MHz
R
0
Thermal Resistance
Detector (Si Phototransistor)
Capacitance
R
750
thJA
C
5.2
pF
V
=5 V, f=1.0 MHz
CE
CE
Thermal Resistance
Package
R
500
K/W
thJA
Collector-Emitter Saturation Voltage
Coupling Capacitance
V
0.25 (≤0.4)
V
I =10 mA, I =2.5 mA
F C
CEsat
C
0.4
pF
C
Current Transfer Ratio (I /I at V =5.0 V) and Collector-Emitter Leakage Current by Dash Number
C
F
CE
Description
I /I (I =10 mA)
-1
-2
-3
-4
40–80
30 (>13)
2.0 (≤50)
63–125
45 (>22)
2.0 (≤50)
100–200
70 (>34)
5.0 (≤100)
160–320
90 (>56)
5.0 (≤100)
%
C
F
F
I /I (I =1.0 mA)
C
F
F
Collector-Emitter Leakage Current, I
nA
CEO
V
=10 V
CE
Figure 1. Switching Times (Typical)
Linear Operation (without saturation)
I =10 mA, V =5.0 V, T =25°C
F
CC
A
Load Resistance
Turn-on Time
Rise Time
R
t
75
Ω
L
3.0
2.0
2.3
2.0
250
µs
ON
R
IF
RL=75 Ω
t
t
t
VCC=5 V
IC
Turn-off Time
Fall Time
OFF
F
47 Ω
Cut-off Frequency
F
kHz
CO
Figure 2. Switching Operation
(with saturation)
Dash No.
-2 and -3 -4
Unit
Parameter
Sym.
-1
IF
1.0 kΩ
I =20 mA I =10 mA I =5.0 mA
F
F
F
VCC=5.0 V
Turn-on Time
Rise Time
t
t
t
t
3.0
4.2
6.0
µs
ON
2.0
18
11
3.0
23
14
4.6
25
15
R
47 Ω
Turn-off Time
Fall Time
OFF
F
Document Number: 83666
Revision 17-August-01
www.vishay.com
2–229
Figure 9. Permissible Diode
Forward Current vs. Ambient
Temperature
Figure 3. Current Transfer Ratio (typ.)
vs. Temperature I =10 mA, V =5.0 V
Figure 6. Transistor capacitance (typ.)
vs. collector-emitter voltage T =25°C,
F
CC
A
f=1.0 MHz
20
pF
15
C
10
5
CCE
0
10-1
10-0
101
102
10-2
V
V
e
Figure 4. Output Characteristics (typ.)
Collector Current vs. Collector-emitter
Figure 7. Permissible Pulse Handling
Capability. Forward Current vs. Pulse
Voltage T =25°C
Width Pulse cycle D=parameter, T =25°C
A
A
Figure 5. Diode Forward Voltage
(typ.) vs. Forward Current
Figure 8. Permissible Power
Dissipation vs. Ambient Temperature
Document Number: 83666
Revision 17-August-01
www.vishay.com
2–230
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