SFH615AAT [VISHAY]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, DIP-4;
| 型号： | SFH615AAT |
| 厂家： | 
VISHAY |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, DIP-4 光电 |
| 文件： | 总9页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFH615A / SFH6156
VISHAY
Vishay Semiconductors
Optocoupler, High Reliability, 5300 VRMS
Features
• Excellent CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 VRMS
• Fast Switching Times
• Low CTR Degradation
1
• Low Coupling Capacitance
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
C
E
A
C
4
3
1
1
2
17448
and WEEE 2002/96/EC
Agency Approvals
Order Information
• UL1577, File No. E52744 System Code H or J,
Double Protection
Part
Remarks
SFH615A-1
CTR 40 - 80 %, DIP-4
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
SFH615A-2
CTR 63 - 125 %, DIP-4
SFH615A-3
CTR 100 - 200 %, DIP-4
SFH615A-4
CTR 160 - 320 %, DIP-4
SFH6156-1
CTR 40 - 80 %, SMD-4
Applications
Switchmode power supply
Telecom
SFH6156-2
CTR 63 - 125 %, SMD-4
SFH6156-3
CTR 100 - 200 %, SMD-4
SFH6156-4
CTR 160 - 320 %, SMD-4
Battery powered equipment
SFH615A-1X006
SFH615A-1X007
SFH615A-2X006
SFH615A-2X007
SFH615A-2X009
SFH615A-3X006
SFH615A-3X007
SFH615A-3X008
SFH615A-3X009
SFH615A-4X006
SFH615A-4X007
SFH615A-4X008
SFH615A-4X009
CTR 40 - 80 %, DIP-4 400 mil (option 6)
CTR 40 - 80 %, SMD-4 (option 7)
CTR 63 - 125 %, DIP-4 400 mil (option 6)
CTR 63 - 125 %, SMD-4 (option 7)
CTR 63 - 125 %, SMD-4 (option 9)
CTR 100 - 200 %, DIP-4 400 mil (option 6)
CTR 100 - 200 %, SMD-4 (option 7)
CTR 100 - 200 %, SMD-4 (option 8)
CTR 100 - 200 %, SMD-4 (option 9)
CTR 160 - 320 %, DIP-4 400 mil (option 6)
CTR 160 - 320 %, SMD-4 (option 7)
CTR 160 - 320 %, SMD-4 (option 8)
CTR 160 - 320 %, SMD-4 (option 9)
Description
The SFH615A (DIP) and SFH6156 (SMD) feature a
variety of transfer ratios, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically cou-
pled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 VRMS or DC.
For additional information on the available options refer to
Option Information.
See TAPE AND REEL Section for 4-pin optocouplers T0 with 90 °
rotation.
Specifications subject to change.
Document Number 83671
Rev. 1.6, 20-Jul-04
www.vishay.com
1
SFH615A / SFH6156
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
6.0
Unit
V
Reverse voltage
V
R
DC Forward current
Surge forward current
Power dissipation
I
60
2.5
100
mA
A
F
t
≤ 10 µs
I
FSM
p
P
mW
diss
Output
Parameter
Test condition
Symbol
Value
70
Unit
V
Collector-emitter voltage
V
CE
Emitter-collector voltage
Collector current
V
7.0
50
V
CEO
I
I
mA
mA
mW
C
t
≤ 1.0 ms
100
150
p
C
Power dissipation
P
diss
Coupler
Parameter
Test condition
Symbol
Value
5300
Unit
Isolation test voltage (between t = 1.0 s
emitter and detector, refered to
climate DIN 40046, part 2,
Nov. 74
V
V
RMS
ISO
Creepage
Clearance
≥ 7.0
≥ 7.0
≥ 0.4
mm
mm
mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
≥ 175
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
Ω
Ω
IO
IO
amb
amb
IO
IO
≥ 10
11
= 500 V, T
= 100 °C
R
≥ 10
Storage temperature range
Ambient temperature range
Junction temperature
T
- 55 to + 150
- 55 to + 100
100
°C
°C
°C
°C
stg
T
amb
T
j
Soldering temperature
max. 10 s, Dip soldering
distance to seating plane
≥ 1.5 mm
T
260
sld
www.vishay.com
2
Document Number 83671
Rev. 1.6, 20-Jul-04
SFH615A / SFH6156
VISHAY
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
200
150
100
50
Phototransistor
Diode
25
0
0
50
75
100 125 150
T
amb
– Ambient Temperature ( qC )
18483
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
1.25
Max
1.65
Unit
V
Forward voltage
I = 60mA
V
I
F
F
Reverse current
Capacitance
V
= 6.0 V
0.01
13
10
µA
pF
R
R
V
= 0 V, f = 1.0 MHz
C
R
O
Thermal resistance
R
750
K/W
thja
Output
Parameter
Test condition
Part
Symbol
Min
Typ.
5.2
Max
Unit
Collector-emitter capacitance
V
V
= 5.0 V, f = 1.0 MHz
C
pF
K/W
nA
CE
CE
CE
thja
Thermal resistance
R
500
2.0
Collector-emitter leakage
current
= 10 V
SFH615A-1
SFH6156-1
I
I
I
I
50
50
CEO
SFH615A-2
SFH6156-2
2.0
5.0
5.0
nA
nA
nA
CEO
CEO
CEO
SFH615A-3
SFH6156-3
100
100
SFH615A-4
SFH6156-4
Coupler
Parameter
Test condition
Symbol
Min
Typ.
0.25
Max
0.4
Unit
Collector-emitter saturation
voltage
I = 10 mA, I = 2.5 mA
V
CEsat
V
F
C
Coupling capacitance
C
0.4
pF
C
Document Number 83671
Rev. 1.6, 20-Jul-04
www.vishay.com
3
SFH615A / SFH6156
Vishay Semiconductors
VISHAY
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
40
Typ.
Max
Unit
%
I /I
I = 10 mA, V = 5.0 V
SFH615A-1
SFH6156-1
80
C
F
F
CE
SFH615A-2
SFH6156-2
CTR
CTR
CTR
CTR
CTR
CTR
CTR
63
100
160
13
125
200
320
%
%
%
%
%
%
%
SFH615A-3
SFH6156-3
SFH615A-4
SFH6156-4
I = 1.0 mA, V = 5.0 V
SFH615A-1
SFH6156-1
30
45
70
90
F
CE
SFH615A-2
SFH6156-2
22
SFH615A-3
SFH6156-3
34
SFH615A-4
SFH6156-4
56
Switching Characteristics
Switching Non-saturated
Parameter
Rise Time
Test condition
= 10 mA, V = 5.0 V, T = 25 °C, R = 75 Ω
Symbol
Min
Typ.
Max
Unit
I
I
I
I
I
t
2.0
2.0
3.0
2.3
250
µs
µs
F
F
F
F
F
CC
A
L
r
Fall Time
= 10 mA, V = 5.0 V, T = 25 °C, R = 75 Ω
t
CC
A
L
f
Turn-on time
Turn-off time
= 10 mA, V = 5.0 V, T = 25 °C, R = 75 Ω
t
µs
CC
A
L
on
= 10 mA, V = 5.0 V, T = 25 °C, R = 75 Ω
t
µs
CC
A
L
off
Cut-off
= 10 mA, V = 5.0 V, T = 25 °C, R = 75 Ω
f
kHz
CC
A
L
ctr
frequency
Switching Saturated
Parameter
Test condition
Part
Symbol
Min
Typ.
2.0
Max
Unit
Rise time
V
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 20 mA
SFH615A-1
SFH6156-1
t
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
CC
A
L
F
r
V
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 10 mA
SFH615A-2
SFH6156-2
t
3.0
3.0
4.6
11
CC
A
L
F
r
SFH615A-3
SFH6156-3
t
r
V
V
V
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 5.0 mA
SFH615A-4
SFH6156-4
t
CC
CC
CC
A
L
F
r
Fall time
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 20 mA
SFH615A-1
SFH6156-1
t
A
L
F
f
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 10 mA
SFH615A-2
SFH6156-2
t
14
A
L
F
f
SFH615A-3
SFH6156-3
t
14
f
V
V
V
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 5.0 mA
SFH615A-4
SFH6156-4
t
15
CC
CC
CC
A
L
F
f
Turn-on time
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 20 mA
SFH615A-1
SFH6156-1
t
3.0
4.2
4.2
6.0
A
L
F
on
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 10 mA
SFH615A-2
SFH6156-2
t
A
L
F
on
SFH615A-3
SFH6156-3
t
on
V
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 5.0 mA
SFH615A-4
SFH6156-4
t
CC
A
L
F
on
www.vishay.com
4
Document Number 83671
Rev. 1.6, 20-Jul-04
SFH615A / SFH6156
VISHAY
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
Min
Typ.
18
Max
Unit
Turn-off time
V
V
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 20 mA
SFH615A-1
SFH6156-1
t
µs
CC
CC
A
L
F
off
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 10 mA
SFH615A-2
SFH6156-2
t
23
23
25
µs
µs
µs
A
L
F
off
SFH615A-3
SFH6156-3
t
off
V
= 5.0 V, T = 25 °C, R = 1 kΩ, I = 5.0 mA
SFH615A-4
SFH6156-4
t
CC
A
L
F
off
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
103
%
5
I
= 10 mA, V
= 5.0 V
4
F
CE
I
I
C
F
IF
RL = 75 Ω
3
2
VCC = 5 V
102
5
IC
1
47 Ω
101
–25
0
25
50
°C
75
T
A
isfh615a_01
isfh615a_01
Figure 2. Linear Operation ( without Saturation)
Figure 4. Current Transfer Ratio (typical) vs. Temperature
30
I
=14 mA
F
mA
12 mA
10 mA
I
20
C
IF
1 Ω
VCC = 5 V
8.0 mA
6.0 mA
10
0
4.0 mA
2.0 mA
47 Ω
1.0 mA
10
0
5
V
15
V
CE
isfh615a_02
isfh615a_04
Figure 3. Switching Operation (with Saturation)
Figure 5. Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
Document Number 83671
Rev. 1.6, 20-Jul-04
www.vishay.com
5
SFH615A / SFH6156
Vishay Semiconductors
VISHAY
1.2
V
25°
50°
75°
1.1
V
F
1.0
0.9
–1
0
1
2
10
10
10
mA
10
I
F
isfh615a_05
Figure 6. Diode Forward Voltage (typ.) vs. Forward Current
20
pF
f = 1.0 MHz
15
10
C
C
CE
5
0
10
–2
–1
–0
1
2
10
10
10
V
10
V
e
isfh615a_06
Figure 7. Transistor Capacitance (typ.) vs. Collector-Emitter
Voltage
4
10
D=
0
mA
5
t
0.005
0.01
0.02
0.05
0.1
p
t
p
I
D=
F
T
T
3
10
I
F
5
2
10
5
0.2
0.5
DC
Pulse cycle D = parameter
1
10
–5
–4
–3
–2
t
–1
0
1
10
10
10
10
10
10
s 10
p
isfh615a_07
Figure 8. Permissible Pulse Handling Capability Forward Current
vs. Pulse Width
www.vishay.com
6
Document Number 83671
Rev. 1.6, 20-Jul-04
SFH615A / SFH6156
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
ISO Method A
3
4
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
10°
4°
typ.
.110 (2.79)
.130 (3.30)
.020 (.508 )
.035 (.89)
.050 (1.27)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
i178027
.100 (2.54)
Package Dimensions in Inches (mm)
SMD
.030 (.76)
pin one ID
R .010 (.25)
.100 (2.54)
.070 (1.78)
.255 (6.48)
.268 (6.81)
.060 (1.52)
.315 (8.00) min
.435 (11.05)
3
4
.375 (9.52)
.305 (10.03)
.179 (4.55)
.190 (4.83)
.296 (7.52)
.312 (7.90)
.030 (.76)
.045 (1.14)
.031 (.79)
typ.
10°
.010 (.25)
typ.
.130 (3.30)
.150 (3.81)
ISO Method A
.315 (8.00)
min.
.020 (.508)
.040 (1.02)
4° typ.
.0098 (.249)
.035 (.102)
3°–7°
1.00 (2.54)typ.
Lead
.050 (1.27)
typ.
coplanarity
.004 max.
i178029
Document Number 83671
Rev. 1.6, 20-Jul-04
www.vishay.com
7
SFH615A / SFH6156
Vishay Semiconductors
VISHAY
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)ref.
0040 (.102)
0098 (.249)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
15° max.
18486
min.
www.vishay.com
8
Document Number 83671
Rev. 1.6, 20-Jul-04
SFH615A / SFH6156
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83671
Rev. 1.6, 20-Jul-04
www.vishay.com
9
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