SFH6751-X006 [VISHAY]
High Speed Optocoupler, 10 Mbd;型号: | SFH6751-X006 |
厂家: | VISHAY |
描述: | High Speed Optocoupler, 10 Mbd |
文件: | 总13页 (文件大小:153K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
High Speed Optocoupler, 10 Mbd
Features
• Choice of CMR performance of 10 kV/µs, 5 kV/µs,
and 100 V/µs
• High speed: 10 Mbd typical
• + 5 V CMOS compatibility
Dual channel
Single channel
1
2
3
4
8
7
6
5
A1
C1
C2
A2
V
CC
V
O1
V
O2
GND
1
2
3
4
8
• Guaranteed AC and DC performance over tem-
perature: - 40 to + 100 °C Temp. Range
V
CC
NC
7
A
V
E
6
5
V
C
• Pure tin leads
O
NC
GND
• Meets IEC60068-2-42 (SO2) and
IEC60068-2-43 (H2S) requirements
SFH6755T, SFH6756T, SFH6757T
18921-3
SFH6745T, SFH6746T, SFH6747T
• Low input current capability: 5 mA
• Lead-free component
sistor output, providing less leakage compared to an
open collector Schottky clamped transistor output.
For the single channel type, an enable function on pin
7 allows the detector to be strobed. The internal shield
provides a guaranteed common mode transient
immunity of 5 kV/µs for the SFH6741 and SFH6751
and 10 kV/µs for the SFH6742 and SFH6752. The
use of a 0.1 µF bypass capacitor connected between
pin 5 and 8 is recommended.
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CUL - File No. E52744, equivalent to CSA bulletin
5A
• DIN EN 60747-5-2 (VDE0884)
Order Information
• Reinforced insulation rating
per IEC60950 2.10.5.1
Part
Remarks
6N137
100 V/µs, Single channel, DIP-8
• VDE available with Option 1
6N137-X006
100 V/µs, Single channel, DIP-8 400 mil
(option 6)
Applications
6N137-X007
SFH6741
100 V/µs, Single channel, SMD-8 (option 7)
5 kV/µs, Single channel, DIP-8
Microprocessor System Interface
PLC, ATE input/output isolation
Computer peripheral interface
SFH6741-X006 5 kV/µs, Single channel, DIP-8 400 mil (option
6)
Digital Fieldbus Isolation: CC-Link, DeviceNet,
Profibus, SDS
SFH6741-X007 5 kV/µs, Single channel, SMD-8 (option 7)
SFH6742
10 kV/µs, Single channel, DIP-8
High speed A/D and D/A conversion
AC Plasma Display Panel Level Shifting
Multiplexed Data Transmission
Digital control power supply
SFH6742-X006 10 kV/µs, Single channel, DIP-8 400 mil
(option 6)
SFH6742-X007 10 kV/µs, Single channel, SMD-8 (option 7)
SFH6750
100 V/µs, Dual channel, DIP-8
SFH6750-X006 100 V/µs, Dual channel, DIP-8 400 mil (option
Ground loop elimination
6)
SFH6750-X007 100 V/µs, Dual channel, SMD-8 (option 7)
Description
SFH6751
5 kV/µs, Dual channel, DIP-8
The 6N137, SFH674x and SFH675x are single chan-
nel 10 Mbd optocouplers utilizing a high efficient input
LED coupled with an integrated optical photodiode IC
detector. The detector has an open drain NMOS-tran-
Document Number 82584
Rev. 1.8, 13-Aug-04
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1
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Part
Remarks
SFH6751-X006 5 kV/µs, Dual channel, DIP-8 400 mil (option
Truth Table (Positive Logic)
6)
LED
ENABLE
OUTPUT
SFH6751-X007 5 kV/µs, Dual channel, SMD-8 (option 7)
ON
H
H
L
H
H
H
L
SFH6752
10 kV/µs, Dual channel, DIP-8
OFF
ON
SFH6752-X006 10 kV/µs, Dual channel, DIP-8 400 mil (option
L
6)
OFF
ON
L
SFH6752-X007 10 kV/µs, Dual channel, SMD-8 (option 7)
NC
NC
OFF
H
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
mA
1)
I
20
Average forward current
F
F
2)
I
15
5
mA
V
Average forward current
Reverse input voltage
V
V
R
1)
V
+ 0.5 V
V
E
CC
Enable input voltage
1)
I
5
mA
mA
Enable input current
E
Surge current
t = 100 µs
I
200
FSM
1)
Package: Single DIP-8
Package: Dual DIP-8
2)
Output
Parameter
Test condition
1 minute max.
Symbol
Value
Unit
Supply voltage
Output current
Output voltage
V
7
V
CC
I
50
7
mA
V
O
V
O
1)
P
85
60
mW
mW
Output power dissipation
diss
diss
2)
P
Output power dissipation per channel
1)
Package: Single DIP-8
Package: Dual DIP-8
2)
Coupler
Parameter
Test condition
Symbol
Value
Unit
°C
Storage temperature
T
- 55 to + 150
- 40 to + 100
260
stg
Operating temperature
T
°C
°C
°C
amb
1)
for 10 sec.
for 1 minute
t = 1.0 sec.
Lead solder temperature
2)
260
Solder reflow temperature
Isolation test voltage
V
5300
V
RMS
ISO
1)
2)
Package: DIP-8 through hole
Package: DIP-8 SMD
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Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Recommended Operating Conditions
Parameter
Test condition
Symbol
Min
- 40
Typ.
Max
100
Unit
°C
Operating temperature
T
amb
Supply voltage
V
4.5
0
5.5
250
15
V
µA
mA
V
cc
FL
Input current low level
Input current high level
Logic high enable voltage
Logic low enable voltage
Output pull up resistor
Fanout
I
I
5
FH
V
2.0
0.0
330
V
CC
EH
V
0.8
4 K
5
V
EL
R
Ω
L
R = 1 kΩ
N
-
L
Electrical Characteristics
T
= 25 °C and V = 5.5 V, unless otherwise specified
cc
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
1.1
Typ.
1.4
Max
1.7
Unit
Input forward voltage
I = 10 mA
V
V
F
F
Reverse current
Input capacitance
V
= 4.5 V
I
1
µA
R
R
f = 1 MHz, V = 0 V
C
55
pF
F
I
Output
Parameter
Test condition
Symbol
Min
Typ.
4.1
Max
7.0
Unit
mA
High level supply
current (single
channel)
V
V
= 0.5 V, I = 0 mA
I
E
F
CCH
= V , I = 0 mA
I
I
3.3
8.2
6.0
mA
mA
E
CC
F
CCH
CCH
High level supply
current (dual
channel)
I = 0 mA
14.0
F
Low level supply
current
V
= 0.5 V, I = 10 mA
I
4.0
7.0
mA
E
F
CCL
V
V
= V , I = 10 mA
I
3.3
6.0
1
mA
E
CC
F
CCL
High level output
current
= 2.0 V, V = 5.5 V, I = 250 µA
I
OH
0.002
µA
E
O
F
Low level output
voltage
V
= 2.0 V, I = 5 mA,
V
0.2
2.4
0.6
5.0
V
E
F
OL
TH
EH
I
(sinking) = 13 mA
OL
Input threshold
current
V
= 2.0 V, V = 5.5 V,
I
mA
E
O
I
(sinking) = 13 mA
OL
High level enable
current
V
= 2.0 V
I
- 0.6
- 0.8
- 1.6
- 1.6
mA
mA
V
E
Low level enable
current
V
= 0.5 V
I
EL
E
High level enable
voltage
V
2.0
EH
Low level enable
voltage
V
0.8
V
EL
Document Number 82584
Rev. 1.8, 13-Aug-04
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Switching Characteristics
Over Recommended Temperature (T = - 40 to + 100 °C), V = 5 V, I = 7.5 mA unless otherwise specified.
a
CC
F
All Typicals at T = 25 °C, V = 5 V.
a
CC
Parameter
Test condition
Symbol
Min
20
Typ.
48
Max
Unit
ns
*
Propagation delay time to high R = 350 Ω, C = 15 pF
output level
t
L
L
PLH
75
t
t
100
ns
ns
PLH
*
Propagation delay time to low
output level
R = 350 Ω, C = 15 pF
25
50
L
L
PHL
75
t
100
35
ns
ns
ns
ns
ns
ns
PHL
Pulse width distortion
R = 350 Ω, C = 15 pF
| t
- t
|
2.9
8
L
L
PHL PLH
Propagation delay skew
Output rise time (10 - 90 %)
Output fall time (90 - 10 %)
R = 350 Ω, C = 15 pF
t
40
L
L
PSK
R = 350 Ω, C = 15 pF
t
23
7
L
L
r
R = 350 Ω, C = 15 pF
t
L
L
f
Propagation delay time of
R = 350 Ω, C = 15 pF,
t
12
L
L
ELH
enable from V to V
V
= 0 V, V = 3 V
EH
EL
EL
EH
Propagation delay time of
R = 350 Ω, C = 15 pF,
t
11
ns
L
L
EHL
enable from V to V
V
= 0 V, V = 3 V
EL
EH
EL
EH
*
75ns applies to the 6N137 only, a JEDEC registered specification
V
CC
5 V
Single Channel
R
Pulse Gen.
= 50 Ω
f
L
V
1
2
3
4
CC 8
Z
t
o
= 7.5 mA
= 3.75 mA
0 mA
I
F
I
I
F
F
V
E
= t = 5 ns
r
Input I
7
6
5
F
0.1 µF
Bypass
Output V
Monitoring
V
OUT
O
Input I
Monitoring
F
V
OL
Node
Output V
O
1.5 V
OH
Node
R
V
C
= 15 pF
M
L
GND
t
PLH
t
PHL
The Probe and Jig Capacitances are included in C
L
18964-1
Figure 1. Single Channel Test Circuit for t
, t
, t and t
PLH PHL r f
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Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Pulse Gen.
Z
t
= 50 Ω
o
f
+ 5 V
= t = 5 ns
r
Dual Channel
I
F
V
1
2
3
4
8
7
6
5
CC
R
L
Output V
O
Input
Monitoring
Monitoring
Node
R
Node
0.1 µF
Bypass
= 15 pF
C
M
L
GND
18963-1
Figure 2. Dual Channel Test Circuit for t
, t
, t and t
f
PLH PHL
r
Input V
Monitoring Node
Pulse Gen.
E
V
CC
Z
t
= 50 Ω
= t = 5 ns
r
5 V
o
Single Channel
f
R
L
V
1
2
3
4
CC 8
3 V
V
E
7.5 mA
Output V
Monitoring
Node
O
1.5 V
Input V
E
7
6
5
0.1 µF
Bypass
I
F
t
EHL
V
OUT
t
ELH
C
= 15 pF
Output V
L
O
1.5 V
GND
The Probe and Jig Capacitances are included in C
L
18975-1
Figure 3. Single Channel Test Circuit for t
and t
ELH
EHL
Document Number 82584
Rev. 1.8, 13-Aug-04
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Common Mode Transient Immunity
Parameter
Test condition
Symbol
Min
100
Typ.
Max
Unit
Common mode
transient immunity
(high)
|V | = 10 V, V = 5 V, I = 0 mA,
| CM
|
V/µs
CM
CC
F
H
1)
V
= 2 V, R = 350 Ω, T
= 25 °C
amb
O(min)
L
|V | = 50 V, V = 5 V, I = 0 mA,
| CM
| CM
|
|
5000
10000
100
10000
15000
V/µs
V/µs
V/µs
V/µs
V/µs
CM
CC
F
H
H
2)
3)
V
= 2 V, R = 350 Ω, T
= 25 °C
amb
O(min)
L
|V | = 1 kV, V = 5 V, I = 0 mA,
CM
CC
F
V
= 2 V, R = 350 Ω, T
= 25 °C
amb
O(min)
L
|V | = 10 V, V = 5 V, I = 7.5 mA,
| CM |
CM
CC
F
L
1)
V
= 0.8 V, R = 350 Ω, T
= 25 °C
O(max)
L
amb
|V | = 50 V, V = 5 V, I = 7.5 mA,
| CM |
5000
10000
10000
15000
CM
CC
F
L
2)
3)
V
= 0.8 V, R = 350 Ω, T
= 25 °C
O(max)
L
amb
|V | = 1 kV, V = 5 V, I = 7.5 mA,
| CM |
CM
CC
F
L
V
= 0.8 V, R = 350 Ω, T
= 25 °C
O(max)
L
amb
1)
For 6N137 and SFH6750
For SFH6741 and SFH6751
For SFH6742 and SFH6752
2)
3)
V
CC
5 V
I
Single Channel
V
F
R
L
1
2
3
4
CC 8
(PEAK)
V
B
A
CM
V
E
Output V
Monitoring
Node
O
V
7
6
5
CM
0 V
5 V
0.1 µF
Bypass
Switch AT A: I = 0 mA
F
V
OUT
V
CM
H
O
(min.)
V
V
O
FF
Switch AT A: I = 7.5 mA
F
(max.)
V
O
CM
V
O
V
0.5
L
GND
V
CM
+
-
Pulse Generator
= 50 Ω
18976-1
Z
O
Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity
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Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
I
F
Dual Channel
B
A
+ 5 V
V
8
7
6
5
1
2
3
4
CC
R
L
Output V
O
Monitoring
Node
0.1 µF
Bypass
V
FF
GND
V
CM
+
-
Pulse Generator
= 50 Ω
18977
Z
O
Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Climatic Classification (according to
IEC 68 part 1)
55/110/21
Comparative Tracking Index
CTI
175
399
V
V
P
8000
V
V
IOTM
IORM
SI
630
500
300
175
mW
mA
°C
I
SI
T
SI
Creepage
Clearance
Creepage
Clearance
standard DIP-8
7
7
mm
mm
mm
mm
mm
standard DIP-8
400mil DIP-8
400mil DIP-8
8
8
Insulation thickness, reinforced rated per IEC60950 2.10.5.1
0.2
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.7
1.60
I
= 50 mA
F
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.6
1.5
1.4
1.3
1.2
1.1
1.0
I
F
= 20 mA
I
= 10 mA
F
I
= 1 mA
40
F
–40 –20
T
0
20
60
80 100
0
5
10 15 20 25 30 35 40 45 50
17610
– Ambient Temperature ( °C )
amb
17611
I – Forward Current ( mA )
F
Figure 6. Forward Voltage vs. Ambient Temperature
Figure 7. Forward Voltage vs. Forward Current
Document Number 82584
Rev. 1.8, 13-Aug-04
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
7
6
5
4
3
2
1
0
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
R
= 350
L
R
= 4 k
L
R
= 1 k
L
–40 –20
0
20
40
60
80 100
–40 –20
0
20
40
60
80 100
17613-1
T
amb
– Ambient Temperature ( C )
17616
T
amb
– Ambient Temperature ( C )
Figure 8. Reverse Current vs. Ambient Temperature
Figure 11. Input Threshold ON Current vs. Ambient Temperature
2.6
2.5
2.4
4.0
3.5
3.0
V
= 7 V
= 10 mA
CC
V
= 5 V
= 10 mA
CC
I
F
R
L
= 350
2.5
2.0
1.5
1.0
0.5
0.0
I
F
2.3
2.2
2.1
2.0
R
L
= 4 k
R
L
= 1 k
–40 –20
0
20
40
60
80 100
–40 –20
0
20
40
60
80 100
17617
T
amb
– Ambient Temperature ( C )
17614
T
amb
– Ambient Temperature ( C )
Figure 9. Low Level Supply Current vs. Ambient Temperature
Figure 12. Input Threshold OFF Current vs. Ambient Temperature
0.30
3.5
V
I
= 5.5 V
= 5 mA
CC
I
L
= 16 mA
V
= 7 V
CC
F
3.4
3.3
3.2
3.1
3.0
2.9
2.8
I
L
= 13 mA
0.25
0.20
0.15
0.10
0.05
0.00
I
= 0.25 mA
F
V
= 5 V
CC
I
= 0.25 mA
F
I
= 10 mA
= 6 mA
L
I
L
–40 –20
T
0
20
40
60
80 100
–40 –20
0
20
40
60
80 100
17618
– Ambient Temperature ( C )
17615
T
amb
– Ambient Temperature ( C )
amb
Figure 10. High Level Supply Current vs. Ambient Temperature
Figure 13. Low Level Output Voltage vs. Ambient Temperature
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Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
60
50
40
30
20
10
0
120
t
4 kΩ
PLH,
I
= 5 mA
= 10 mA
F
I
F
100
80
60
40
20
0
t
1 kΩ
PLH,
t
350 Ω
350 Ω
PLH,
t
PHL,
t
1 kΩ
PHL,
t
4 kΩ
PHL,
–40 –20
0
20
40
60
80 100
–40 –20
T
0
20
40
60
80 100
17619
T
amb
– Ambient Temperature ( _C )
17622
– Ambient Temperature ( °C )
amb
Figure 14. Low Level Output Current vs. Ambient Temperature
Figure 17. Propagation Delay vs. Ambient Temperature
120
50
45
40
35
30
25
20
15
10
5
t
4 kΩ
PLH,
100
80
60
40
20
0
t
1 kΩ
PLH,
t
350 Ω
PLH,
t
350 Ω
PHL,
t
1 kΩ
PHL,
t
4 kΩ
PHL,
0
5
7
9
11
13
15
–40 –20
T
0
20
40
60
80 100
17623
I – Forward Current ( mA )
F
17620
– Ambient Temperature ( C )
amb
Figure 15. High Level Output Current vs. Ambient Temperature
Figure 18. Propagation Delay vs. Forward Current
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
50
R
= 4 kΩ
L
40
30
20
10
0
R
3
= 350 W
R
L
= 1 kΩ
L
1.5
1.0
0.5
0.0
R
L
= 1 kW
R
L
= 350 Ω
R
L
= 4 kW
0
1
2
4
5
–40 –20
0
20
40
60
80 100
17621
I
F
– Forward Input Current ( mA )
17624
T
amb
– Ambient Temperature ( °C )
Figure 16. Output Voltage vs. Forward Input Current
Figure 19. Pulse Width Distortion vs. Ambient Temperature
Document Number 82584
Rev. 1.8, 13-Aug-04
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
60
50
60
50
R
R
= 4 kΩ
= 1 kΩ
L
t
= 4 kΩ
eLH
40
30
20
10
0
40
30
20
10
0
t
= 350 Ω
eLH
t
= 350 Ω
eHL
L
t
= 1 kΩ
eLH
t
= 1 kΩ
R
L
= 350 Ω
eHL
t
= 4 kΩ
eHL
5
7
9
11
13
15
–40 –20
T
0
20
40
60
80 100
17625
I – Forward Current ( mA )
F
17628
– Ambient Temperature ( °C )
amb
Figure 20. Pulse Width Distortion vs. Forward Current
Figure 23. Enable Propagation Delay vs. Ambient Temperature
300
t , R = 4 kΩ
r
L
250
200
150
100
50
t , R = 350 Ω
f
L
t , R = 1 kΩ
f
L
t , R = 4 kΩ
f
L
t , R = 1 kΩ
r
L
t , R = 350 Ω
r
L
0
–40 –20
T
0
20
40
60
80 100
17626
– Ambient Temperature ( °C )
amb
Figure 21. Rise and Fall Time vs. Ambient Temperature
300
t , R = 4 kΩ
r
L
250
200
150
100
50
t , R = 350 Ω
f
L
t , R = 1 kΩ
f
L
t , R = 4 kΩ
f
L
t , R = 1 kΩ
r
L
t , R = 350 Ω
r
L
0
5
7
9
11
13
15
17627
I – Forward Current ( mA )
F
Figure 22. Rise and Fall Time vs. Forward Current
www.vishay.com
10
Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
5
3
1
2
7
.255 (6.48)
.268 (6.81)
6
8
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.331 (8.4)
MIN.
15° max.
.315 (8.00)
min.
.406 (10.3)
18450
MAX.
Document Number 82584
Rev. 1.8, 13-Aug-04
www.vishay.com
11
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
12
Document Number 82584
Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Document Number 82584
Rev. 1.8, 13-Aug-04
www.vishay.com
13
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