SI1022R-T1-GE3 [VISHAY]
N-Channel 60-V (D-S) MOSFET; N通道60 -V （D -S ）的MOSFET
| 型号： | SI1022R-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1022R
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
•
•
•
•
Halogen-free Option Available
VDS(min.) (V)
RDS(on) (Ω)
VGS(th) (V)
ID (mA)
TrenchFET® Power MOSFETs
Low On-Resistance: 1.25 Ω
Low Threshold: 2.5 V
1.25 at VGS = 10 V
60
1 to 2.5
330
RoHS
COMPLIANT
Low Input Capacitance: 30 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
Miniature Package
SC-75A
(SOT-416)
ESD Protected: 2000 V
APPLICATIONS
G
S
1
2
•
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
3
D
•
•
Battery Operated Systems
Solid State Relays
Marking Code: E
BENEFITS
•
•
•
•
•
Low Offset Voltage
Ordering Information: Si1022R-T1-E3 (Lead (Pb)-free)
Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Small Board Area
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA = 25 °C
A = 85 °C
330
Continuous Drain Currenta
Pulsed Drain Currenta
Power Dissipationa
ID
T
240
mA
IDM
PD
650
TA = 25 °C
TA = 85 °C
250
mW
130
Thermal Resistance, Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
RthJA
500
°C/W
°C
TJ, Tstg
- 55 to 150
Notes:
a. Surface Mounted on FR4 board, Power Applied for t ≤ 10 s.
Document Number: 71331
S-81543-Rev. B, 07-Jul-08
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1
Si1022R
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS = 0 V, ID = 10 µA
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
60
1
V
VGS(th)
VDS = VGS, ID = 0.25 mA
2.5
150
500
20
VDS = 0 V, VGS
=
10 V
TJ = 85 °C
5 V
VDS = 50 V, VGS = 0 V
TJ = 85 °C
DS = 60 V, VGS = 0 V
DS = 10 V, VGS = 4.5 V
IGSS
Gate-Body Leakage
V
DS = 0 V, VGS =
nA
10
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
100
1
V
µA
V
500
800
ID(on)
mA
VDS = 7.5 V, VGS = 10 V
VGS = 4.5 V, ID = 200 mA
3.0
5.0
TJ = 125 °C
GS = 10 V, ID = 500 mA
TJ = 125 °C
Drain-Source On-State Resistancea
RDS(on)
Ω
V
1.25
2.25
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 10 V, ID = 200 mA
VGS = 0 V, IS = 200 mA
100
mS
V
VSD
1.3
Ciss
Coss
Crss
Qg
Input Capacitance
30
6
pF
nC
VDS = 25 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
2.5
VDS = 10 V, ID = 250 mA, VGS = 4.5 V
0.6
Switchingb, c
Turn-On Time
Turn-Off Time
t(on)
t(off)
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGEN = 10 V, RG = 10 Ω
25
35
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71331
S-81543-Rev. B, 07-Jul-08
Si1022R
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
1200
900
600
300
0
1.0
0.8
0.6
0.4
0.2
0.0
6 V
5 V
T = - 55 °C
J
V
= 10 thru 7 V
GS
25 °C
125 °C
4 V
3 V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 0 V
GS
f = 1 MHz
V
= 4.5 V
GS
C
iss
V
= 10 V
GS
C
oss
C
rss
0
5
10
15
20
25
0
200
400
600
800
1000
I
D
- Drain Current (mA)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
2.0
1.6
1.2
0.8
0.4
0.0
7
6
5
4
3
2
1
0
V
= 10 V at 500 mA
V
= 10 V
= 250 mA
GS
DS
I
D
V
= 4.5 V
GS
at 200 mA
- 50 - 25
0
25
50
75
100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 71331
S-81543-Rev. B, 07-Jul-08
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Si1022R
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
1000
5
4
3
2
1
0
V
= 0 V
GS
100
T = 125 °C
J
I
D
= 500 mA
10
1
T = 25 °C
J
I
D
= 200 mA
T = - 55 °C
J
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
V
- Gate-to-Source Voltage (V)
GS
V
- Source-to-Drain Voltage (V)
SD
On-Resistance vs. Gate-Source Voltage
Source-Drain Diode Forward Voltage
0.4
0.2
3
2.5
I
D
= 250 µA
2
0.0
1.5
- 0.2
- 0.4
- 0.6
- 0.8
1
0.5
0
T
A
= 25 °C
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
Time (s)
T - Junction Temperature (°C)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage Variance Over Temperature
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 500 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
- 1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71331.
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Document Number: 71331
S-81543-Rev. B, 07-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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