SI1033X [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI1033X |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1033X
Vishay Siliconix
New Product
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
1.5ĆV Rated
VDS (V)
rDS(on) (W)
ID (mA)
8 @ V = –4.5 V
–150
–125
–100
–30
GS
12 @ V = –2.5
V
GS
–20
15 @ V = –1.8 V
GS
20 @ V = –1.5 V
GS
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D Low On-Resistance: 8 W
D Low Threshold: 0.9 V (typ)
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
D Fast Switching Speed: 45 ns (typ) D High-Speed Circuits
D 1.5-V Operation
D Low Battery Voltage Operation
D Gate-Source ESD Protection
SC-89
S
1
1
6
D
1
2
3
5
4
G
D
G
Marking Code: K
1
2
S
2
2
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–20
DS
V
V
GS
"5
T
= 25_C
= 85_C
–155
–110
–145
–105
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
mA
b
Pulsed Drain Current
I
–650
DM
a
Continuous Source Current (diode conduction)
I
–450
280
–380
250
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
mW
D
T
A
145
130
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T , T
–55 to 150
2000
_C
V
J
stg
ESD
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71428
S-03201—Rev. A, 12-Mar-01
www.vishay.com
1
Si1033X
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
V
V
= V , I = –250 mA
–0.40
–1.20
"1
V
GS(th)
DS
GS
D
V
= 0 V, V = "2.8 V
"0.5
DS
DS
GS
Gate-Body Leakage
I
mA
GSS
V
= 0 V, V = "4.5 V
"1
–1
"2
GS
V
= –16 V, V = 0 V
–500
–10
nA
mA
DS
GS
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
= –5 V, V = –4.5 V
–200
mA
D(on)
GS
V
GS
= –4.5 V, I = –150 mA
8
D
V
= –2.5 V, I = –125 m A
12
15
20
GS
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= –1.8 V, I = –100 m A
D
V
= –1.5 V, I = –30 m A
GS
D
a
Forward Transconductance
g
0.4
S
V
V
= –10 V, I = –150 mA
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= –150 mA, V = 0 V
–1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
1500
150
g
Q
Q
V
= –10 V, V = –4.5 V, I = –150 mA
pC
ns
gs
gd
DS
GS
D
450
t
55
30
60
30
d(on)
t
r
V
DD
= –10 V, R = 65 W
L
I
D
^ –150 mA, V
= –4.5 V, R = 10 W
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
Output Characteristics
Transfer Characteristics
0.5
= 5 thru 2.5 V
500
400
300
200
100
0
2 V
V
GS
T
= –55_C
J
25_C
0.4
0.3
0.2
0.1
0.0
1.8 V
125_C
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71428
www.vishay.com
S-03201—Rev. A, 12-Mar-01
2
Si1033X
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
On-Resistance vs. Drain Current
Capacitance
25
20
15
10
5
120
100
80
60
40
20
0
V
= 0 V
GS
V
= 1.8 V
GS
f = 1 MHz
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
0
200
400
600
800
1000
0
4
8
12
16
20
125
6
I
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
5
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 150 mA
DS
I
D
4
3
2
1
0
V
= 4.5 V
= 150 mA
GS
I
D
V
= 1.8 V
= 125 mA
GS
I
D
0.0
0.2
0.4
Q
0.6
0.8
1.0
1.2
1.4
1.6
–50
–25
0
25
50
75
100
– Total Gate Charge (nC)
T – Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
1000
100
10
T
= 125_C
J
40
30
20
10
0
I
= 150 mA
D
T
= 25_C
J
T
= –55_C
J
I
D
= 125 mA
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71428
www.vishay.com
S-03201—Rev. A, 12-Mar-01
3
Si1033X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS NOTED)
A
Threshold Voltage Variance vs. Temperature
I
vs. Temperature
GSS
0.3
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.2
I
D
= 0.25 mA
0.1
V
GS
= 2.8 V
–0.0
–0.1
–0.2
–0.3
–50
–25
0
25
50
75
100
125
–50
–25
0
25
50
75
100
125
T
– Temperature (_C)
T
J
– Temperature (_C)
J
BV
vs. Temperature
GSS
0
–1
–2
–3
–4
–5
–6
–7
–50
–25
0
25
50
75
100
125
T
– Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
=500_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71428
www.vishay.com
S-03201—Rev. A, 12-Mar-01
4
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