SI1046R [VISHAY]

N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET


型号：	SI1046R
厂家：	VISHAY
描述：	N-Channel 20-V (D-S) MOSFET N通道20 -V （D -S ）的MOSFET
文件：	总5页 (文件大小：110K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

New Product

Si1046R

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

TrenchFET^®Power MOSFET: 1.8 V Rated

ESD Protected: 2000 V

_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

0.420 at V_GS= 4.5 V

0.501 at V_GS= 2.5 V

0.660 at V_GS= 1.8 V

0.606

0.505

0.15

RoHS

COMPLIANT

0.92

APPLICATIONS

•

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

•

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

SC75-3L

Marking Code

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1046R-T1-E3 (Lead (Pb)-free)

Si1046R-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

0.606^{b, c}

0.485^{b, c}

2.5

0.21^{b, c}

0.25^{b, c}

0.16^{b, c}

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source-Drain Diode Current

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

530

Unit

t ≤ 5 s

440

540

Maximum Junction-to-Ambient^{b, d}

°C/W

Steady State

650

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 650 °C/W.

Document Number: 74595

S-81543-Rev. B, 07-Jul-08

www.vishay.com

New Product

Si1046R

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

V_DS

ΔV_DS/T_J

ΔV_GS(th)/T_J

V_GS(th)

V_GS= 0 V, I_D= 250 µA

I_D= 250 µA

Drain-Source Breakdown Voltage

_DSTemperature Coefficient

20.5

mV/°C

V_GS(th)Temperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

- 2.12

V_DS= V_GS, I_D= 250 µA

0.35

2.5

0.95

I_GSS

V_DS= 0 V, V_GS

8 V

V_DS= 20 V, V_GS= 0 V

I_DSS

Zero Gate Voltage Drain Current

On-State Drain Current^a

µA

V_DS= 20 V, V_GS= 0 V, T_J= 85 °C

I_D(on)

_DS= ≥ 5 V, V_GS= 4.5 V

V_GS= 4.5 V, I_D= 0.606 A

V_GS= 2.5 V, I_D= 0.505 A

0.336

0.395

0.438

2.1

0.420

0.501

0.660

Drain-Source On-State Resistance^a

R_DS(on)

g_fs

_GS= 1.8 V, I_D= 0.150 A

V_DS= 10 V, I_D= 0.606 A

Forward Transconductance

Dynamic^b

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_DS= 10 V, V_GS= 0 V, f = 1 MHz

_DS= 10 V, V_GS= 5 V, I_D= 0.606 A

0.99

0.92

0.15

0.30

212

1.49

1.38

Q_g

Total Gate Charge

Q_gs

Q_gd

R_g

V_DS= 10 V, V_GS= 4.5 V, I_D= 0.606 A

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

28.5

114

V_DD= 10 V, R_L= 20.8 Ω

I_D≅ 0.48 A, V_GEN= 4.5 V, R_g= 1 Ω

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Pulse Diode Forward Current^a

Body Diode Voltage

I_SM

V_SD

t_rr

2.5

1.2

I_S= 0.48 A

0.8

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Q_rr

t_a

4.8

12.3

3.7

7.2

I_F= 1.0 A, dI/dt = 100 A/µs

t_b

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 74595

S-81543-Rev. B, 07-Jul-08

New Product

Si1046R

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

0.8

0.6

0.4

0.2

0.0

2.5

2.0

1.5

1.0

0.5

0.0

= 5 V thru 2 V

= 1.5 V

= 25 °C

= 125 °C

= 1.0 V

= - 55 °C

1.6

0.0

0.4

0.8

1.2

2.0

0.0

0.5

1.0

1.5

2.0

2.5

- Gate-to-Source Voltage (V)

- Drain-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

1.0

0.8

0.6

0.4

0.2

0.0

100

= 1.8 V

iss

= 2.5 V

oss

= 4.5 V

rss

0.0

0.6

1.2

1.8

2.4

3.0

- Drain Current (A)

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

1.8

1.6

1.4

1.2

1.0

0.8

0.6

= 0.606 A

= 4.5 V, I = 0.606 A

= 2.5 V, I = 0.505 A

= 10 V

= 16 V

= 1.8 V, I = 0.15 A

0.00

0.25

0.50

0.75

1.00

- 50 - 25

100 125 150

- Total Gate Charge (nC)

T - Junction Temperature (°C)

Gate Charge

On-Resistance vs. Junction Temperature

Document Number: 74595

S-81543-Rev. B, 07-Jul-08

www.vishay.com

New Product

Si1046R

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

1.0

0.8

0.6

0.4

0.2

0.0

= 0.606 A

= 150 °C

= 125 °C

0.1

= 25 °C

0.01

= 25 °C

0.001

0.3

0.6

0.9

1.2

- Gate-to-Source Voltage (V)

- Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

R_DS(on)vs. V_GSvs Temperature

1.0

0.8

0.6

0.4

0.2

Limited by R

DS(on)

1 ms

10 ms

= 250 µA

100 ms

0.1

1 s

10 s

0.01

= 25 °C

Single Pulse

0.001

- 50 - 25

100 125 150

0.1

100

- Drain-to-Source Voltage (V)

- Temperature (°C)

* V

> minimum V at which R

is specified

DS(on)

Threshold Voltage

Safe Operating Area, Junction-to-Ambient

Duty Cycle = 0.5

0.2

0.1

Notes:

0.1

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = R

= 540 °C/W

thJA

(t)

3. T - T = P

DM thJA

Single Pulse

4. Surface Mounted

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

100

600

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?74595.

www.vishay.com

Document Number: 74595

S-81543-Rev. B, 07-Jul-08

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

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