SI1050X [VISHAY]

N-Channel 8-V (D-S) MOSFET; N通道8 -V （D -S ）的MOSFET


型号：	SI1050X
厂家：	VISHAY
描述：	N-Channel 8-V (D-S) MOSFET N通道8 -V （D -S ）的MOSFET
文件：	总6页 (文件大小：123K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Si1050X

Vishay Siliconix

N-Channel 8-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

TrenchFET^®Power MOSFET

100 % R_gTested

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

1.34^a

1.29

1.23

0.7

0.086 at V_GS= 4.5 V

0.093 at V_GS= 2.5 V

0.102 at V_GS= 1.8 V

0.120 at V_GS= 1.5 V

RoHS

COMPLIANT

7.1

APPLICATIONS

•

Load Switch for Portable Devices

SC-89 (6-LEADS)

Marking Code

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1050X-T1-E3 (Lead (Pb)-free)

Si1050X-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

1.34^{b, c}

1.07^{b, c}

0.2^{b, c}

0.236^{b, c}

0.151^{b, c}

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source-Drain Diode Current

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

440

540

530

650

Maximum Junction-to-Ambient^{b, d}

°C/W

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 650 °C/W.

Document Number: 73896

S-80641-Rev. B, 24-Mar-08

www.vishay.com

Si1050X

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

V_DS

ΔV_DS/T_J

ΔV_GS(th)/T_J

V_GS(th)

V_GS= 0 V, I_D= 250 µA

I_D= 250 µA

Drain-Source Breakdown Voltage

_DSTemperature Coefficient

18.2

mV/°C

V_GS(th)Temperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

- 2.55

V_DS= V_GS, I_D= 250 µA

0.35

0.9

100

I_GSS

V_DS= 0 V, V_GS

5 V

µA

V_DS= 8 V, V_GS= 0 V

I_DSS

Zero Gate Voltage Drain Current

On-State Drain Current^a

_DS= 8 V, V_GS= 0 V, T_J= 85 °C

I_D(on)

_DS= ≥ 5 V, V_GS= 4.5 V

V_GS= 4.5 V, I_D= 1.34 A

0.071

0.078

0.085

0.092

4.12

0.086

0.093

0.102

0.120

_GS= 2.5 V, I_D= 1.29 A

_GS= 1.8 V, I_D= 1.23 A

_GS= 1.5 V, I_D= 0.76 A

Drain-Source On-State Resistance^a

R_DS(on)

g_fs

V_DS= 4 V, I_D= 1.34 A

Forward Transconductance

Dynamic^b

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

585

190

130

7.7

7.1

1.14

1.69

3.5

6.8

V_DS= 4 V, V_GS= 0 V, f = 1 MHz

_DS= 4 V, V_GS= 5 V, I_D= 1.34 A

_DS= 4 V, V_GS= 4.5 V, I_D= 1.34 A

f = 1 MHz

11.6

10.7

Q_g

Total Gate Charge

Q_gs

Q_gd

R_g

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

4.6

10.2

t_d(on)

t_r

t_d(off)

t_f

_DD= 4 V, R_L= 3.6 Ω

I_D≅ 1.1 A, V_GEN= 4.5 V, R_g= 1 Ω

Turn-Off DelayTime

Fall Time

37.5

Drain-Source Body Diode Characteristics

Pulse Diode Forward Current^a

Body Diode Voltage

I_SM

V_SD

t_rr

I_S= 1.0 A

0.8

18.5

3.7

1.2

5.7

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Q_rr

t_a

I_F= 1.0 A, di/dt = 100 A/µs

6.7

t_b

11.8

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 73896

S-80641-Rev. B, 24-Mar-08

Si1050X

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= 5 thru 2 V

= 1.5 V

= 125 °C

= 25 °C

= 1.0 V

= - 55 °C

1.6

0.0

0.6

1.2

1.8

2.4

0.0

0.4

0.8

1.2

2.0

- Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics curves vs. Temp.

0.15

0.12

0.09

0.06

0.03

1000

800

600

400

200

= 1.8 V

iss

= 1.5 V

= 2.5 V

= 4.5 V

oss

rss

- Drain Current (A)

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

1.6

1.4

1.2

1.0

0.8

0.6

= 1.34 A

= 4.5 V, I = 1.34 A

= 4 V

= 1.5 V, I = 0.76 A

= 6.4 V

= 2.5 V, I = 1.30 A

= 1.8 V, I = 1.23 A

- 50 - 25

100 125 150

- Total Gate Charge (nC)

T - Junction Temperature (°C)

Q_g- Gate Charge

On-Resistance vs. Junction Temperature

Document Number: 73896

S-80641-Rev. B, 24-Mar-08

www.vishay.com

Si1050X

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

0.16

0.12

0.08

0.04

0.00

= 1.34 A

= 125 °C

= 25 °C

= 150 °C

0.1

0.01

= 25 °C

0.001

0.0

0.2

0.6

- Source-to-Drain Voltage (V)

0.8

1.0

0.4

- Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

R_DS(on)vs V_GSvs Temperature

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

5.0

4.0

3.0

2.0

= 250 µA

1.0

- 50 - 25

100 125 150

0.001

0.01

0.1

1000

100

- Temperature (°C)

Time (s)

Threshold Voltage

Single Pulse Power

Limited by R

1 ms

DS(on)*

10 ms

100 ms

1 s

0.1

10 s

0.01

= 25 °C

Single Pulse

BVDSS Limited

0.001

0.1

100

- Drain-to-Source Voltage (V)

* V

minimum V at which R

is specified

DS(on)

Safe Operating Area, Junction-to-Ambient

www.vishay.com

Document Number: 73896

S-80641-Rev. B, 24-Mar-08

Si1050X

Vishay Siliconix

TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Notes:

0.01

0.001

1. Duty Cycle, D =

2. Per Unit Base = R

= 540 °C/W

thJA

(t)

3. T - T = P

JM DM thJA

Single Pulse

4. Surface Mounted

0.0001

-4

-3

-2

-1

1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

100

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?73896.

Document Number: 73896

S-80641-Rev. B, 24-Mar-08

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

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