SI1070X [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI1070X |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1070X
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free Option Available
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
1.2a
1.0
0.099 at VGS = 4.5 V
0.140 at VGS = 2.5 V
RoHS
30
3.5
COMPLIANT
APPLICATIONS
Load Switch for Portable Devices
•
SC-89 (6-LEADS)
D
D
G
1
2
3
6
D
D
S
Marking Code
XX
5
4
U
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1070X-T1-E3 (Lead (Pb)-free)
Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
12
1.2b, c
1b, c
6
TA = 25 °C
A = 70 °C
Continuous Drain Current (TJ = 150 °C)a
ID
T
A
IDM
IAS
EAS
IS
Pulsed Drain Current
Avalanche Current
9
L = 0.1 mH
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
4.01
0.2b, c
0.236b, c
0.151b, c
mJ
A
TA = 25 °C
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
440
Maximum
Unit
t ≤ 5 s
530
650
Maximum Junction-to-Ambientb, d
RthJA
°C/W
Steady State
540
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 650 °C/W.
Document Number: 73893
S-81528-Rev. C, 30-Jun-08
www.vishay.com
1
Si1070X
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
24.5
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 3.81
VDS = VGS, ID = 250 µA
0.7
6
1.55
100
1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
nA
µA
A
VDS = 30 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
V
DS = 30 V, VGS = 0 V, TJ = 85 °C
10
On-State Drain Currenta
V
DS = ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.2 A
VGS = 2.5 V, ID = 1.0 A
VDS = 15 V, ID = 1.2 A
0.082
0.116
5
0.099
0.140
Drain-Source On-State Resistancea
Ω
Forward Transconductance
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
385
55
VDS = 15 V, VGS = 0 V, f = 1 MHz
DS = 15 V, VGS = 5 V, ID = 1.2 A
pF
30
V
3.8
3.5
1.1
0.98
4.7
10
8.3
4.1
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
V
DS = 15 V, VGS = 4.5 V, ID = 4.6 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
6.2
15
33
21
9
td(on)
tr
td(off)
tf
VDD = 15 V, RL = 15 Ω
22
ns
I
D ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
14
6
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
VSD
trr
6
A
V
IS = 1.2 A
0.8
19.4
18.43
16.4
3
1.2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
29.5
27.5
nC
Qrr
ta
IF = 3.8 A, dI/dt = 100 A/µs
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73893
S-81528-Rev. C, 30-Jun-08
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
6
5
4
3
2
1
0
3.0
2.4
1.8
1.2
0.6
0.0
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
T
= 125 °C
C
V
GS
= 2 V
T
= 25 °C
C
T
=
- 55 °C
2.4
C
V
GS
= 1.5 V
0.0
0.6
1.2
1.8
2.4
0.0
0.6
1.2
1.8
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics curves vs. Temp
0.30
0.25
0.20
0.15
0.10
0.05
0.00
500
400
300
200
100
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
1
2
3
4
5
6
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 4.5 V
GS
= 1.2 A
I
D
= 1.2 A
I
V
DS
= 15 V
V
GS
= 24 V
V
= 2.5 V
GS
= 1 A
I
D
0
1
2
3
4
5
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Qg - Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73893
S-81528-Rev. C, 30-Jun-08
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3
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
10
0.24
0.18
0.12
0.06
0.00
I
D
= 1.2 A
1
T
A
= 125 °C
T
= 150 °C
J
0.1
0.01
T
= 25 °C
J
T
A
= 25 °C
0.001
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
- Gate-to-Source Voltage (V)
V
GS
Source-Drain Diode Forward Voltage
RDS(on) vs. VGS vs. Temperature
1.5
1.4
5.0
4.0
3.0
2.0
1.0
0.0
I
D
= 250 µA
1.2
1.0
0.8
0.6
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
Time (s)
Single Pulse Power
100
1000
T
- Temperature (°C)
J
Threshold Voltage
10
100 µs
Limited by R
DS(on)*
1 ms
1
10 ms
100 ms
0.1
1 s
10 s
0.01
DC
BVDSS Limited
T
A
= 25 °C
Single Pulse
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
> minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 73893
S-81528-Rev. C, 30-Jun-08
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
1
Duty Cycle = 0.5
0.2
-1
10
0.1
0.05
Notes:
0.02
-2
10
P
DM
t
1
t
2
t
t
1
-3
10
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 540 °C/W
thJA
(t)
Single Pulse
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
-4
10
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73893.
Document Number: 73893
S-81528-Rev. C, 30-Jun-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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