SI1402DH [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SI1402DH |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1402DH
Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET: 2.5-V Rated
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
Product Is
0.077 @ V = 4.5 V
3.4
2.5
GS
Completely
30
D Load Switch for Portable Applications
Pb-free
0.120 @ V = 2.5
V
GS
SOT-363
SC-70 (6-LEADS)
D
D
G
1
2
3
6
D
D
S
Marking Code
AE XX
5
4
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1402DH-T1—E3
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"12
T
= 25_C
= 70_C
2.7
2.2
3.4
2.7
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
8
DM
a
Continuous Source Current (Diode Conduction)
I
1.2
0.8
0.95
0.6
S
T
= 25_C
= 70_C
1.45
0.94
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
65
87
40
85
130
50
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73328
S-50527—Rev. A, 28-Mar-05
www.vishay.com
1
Si1402DH
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
1.6
"100
1
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "12 V
GS
I
nA
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 30 V, V = 0 V, T = 55_C
5
GS
J
a
On-State Drain Current
I
4
A
V
DS
w 5 V, V = 4.5 V
GS
D(on)
0.064
0.077
0.120
V
= 4.5 V, I = 3.0 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 2.0 A
0.095
10
GS
D
a
Forward Transconductance
g
fs
V
= 5 V, I = 3.0 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 1.05 A, V = 0 V
0.80
1.1
4.5
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
3
g
Q
Q
V
= 15 V, V = 4.5 V, I = 2.0 A
0.6
1.0
2.4
5
nC
gs
gd
DS
GS
D
R
g
W
f = 1.0 MHz
t
8
d(on)
t
r
12
13
7
23
23
12
25
12
V
= 15 V, R = 15 W
L
DD
I
^ 1 A, V
= 10 V, R = 6 W
D
GEN g
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
t
rr
15
7.5
I
= 1.05 A, di/dt = 100 A/ms
F
Q
nC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73328
S-50527—Rev. A, 28-Mar-05
www.vishay.com
2
Si1402DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
8
8
7
6
5
4
3
2
1
0
7
V
= 5 thru 2.5 V
GS
6
5
4
3
2
1
0
2 V
T
= 125_C
C
25_C
−55_C
1.5 V
3
0
1
2
4
5
0.0
0.5
V
1.0
1.5
2.0
2.5
3.0
V
− Drain-to-Source Voltage (V)
− Gate-to-Source Voltage (V)
GS
DS
On-Resistance vs. Drain Current
Capacitance
0.5
0.4
0.3
0.2
0.1
0.0
450
360
270
180
90
C
iss
V
GS
= 2.5 V
C
oss
V
GS
= 4.5 V
C
rss
0
0
2
4
6
8
10
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
GS
= 4.5 V
DS
I
= 2 A
I = 3 A
D
0
1
2
3
4
5
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Document Number: 73328
S-50527—Rev. A, 28-Mar-05
www.vishay.com
3
Si1402DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
0.15
0.10
0.05
0.00
10
I
D
= 3 A
T
= 150_C
J
1
T
= 25_C
J
0.1
0
1
2
3
4
5
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
0.2
8
6
I
D
= 250 mA
−0.0
−0.2
−0.4
−0.6
4
2
0
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
10
1
I
Limited
DM
*r
DS(on)
Limited
100 ms
1 ms
I
D(on)
Limited
10 ms
0.1
100 ms
T
= 25_C
C
Single Pulse
10 s, 1 s
dc
BV
Limited
10
DSS
0.01
0.1
1
100
V
− Drain-to-Source Voltage (V)
DS
*V u minimum V at which r is specified
DS(on)
GS
GS
Document Number: 73328
S-50527—Rev. A, 28-Mar-05
www.vishay.com
4
Si1402DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
0.05
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 105_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73328.
Document Number: 73328
S-50527—Rev. A, 28-Mar-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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