SI1411DH-T1-E3 [VISHAY]
P-Channel 150-V (D-S) MOSFET; P沟道150 -V （D -S ）的MOSFET
| 型号： | SI1411DH-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 150-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1411DH
Vishay Siliconix
New Product
P-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
D Small, Thermally Enhanced SC-70 Package
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
Product Is
Completely
Pb-free
D Ultra Low On-Resistance
APPLICATIONS
2.6 @ V = −10 V
−0.52
−0.51
GS
−150
4.2 nC
2.7 @ V = −6
V
GS
D Active Clamp Circuits in DC/DC Power
Supplies
SOT-363
SC-70 (6-LEADS)
S
D
D
G
1
2
3
6
D
D
S
Marking Code
BG XX
G
5
4
Lot Traceability
and Date Code
Part # Code
D
Top View
P-Channel MOSFET
Ordering Information: Si1411DH-T1—E3
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−150
DS
V
V
GS
"20
T
= 25_C
= 85_C
−0.42
−0.3
−0.52
−0.38
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
−0.8
DM
a
Continuous Diode Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pluse Avalanch Energy
I
−1.3
−0.83
S
I
AS
−2.1
L = 0.1 mH
E
AS
0.22
mJ
T
= 25_C
= 85_C
1.56
0.81
1.0
A
a
Maximum Power Dissipation
P
D
W
T
A
0.52
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 5 sec
Steady State
Steady State
60
100
34
80
125
45
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
www.vishay.com
1
Si1411DH
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −100 mA
−2.5
−4.5
V
GS(th)
DS
GS
D
I
"100
nA
V
= 0 V, V = "20 V
GS
GSS
DS
V
= −150 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −150 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
= −15 V, V = −10 V
−0.8
A
D(on)
GS
V
= −10 V, I = −0.5 A
2.05
2.14
1.5
2.6
2.7
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −6 V, I = −0.5 A
D
GS
DS
a
Forward Transconductance
g
fs
V
= −10 V, I = −0.5 A
S
V
D
a
Diode Forward Voltage
V
SD
I
= −1.4 A, V = 0 V
−0.80
−1.1
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
4.2
0.9
1.3
8.5
4.5
11
6.3
g
Q
Q
V
= −75 V, V = −10 V, I = −0.5 A
nC
gs
gd
DS
GS
D
R
g
f = 1.0 MHz
W
t
7
17
14
17
55
100
d(on)
t
r
V
= −75 V, R = 75 W
L
GEN g
DD
I
^ −1 A, V
= −4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
9
D
ns
d(off)
t
f
11
Reverse Recovery Time
t
rr
36
65
I
F
= −0.5 A, di/dt = 100 A/ms
Body Diode Reverse Recovery Charge
Q
nC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
GS
= 10 thru 5 V
T
= 125_C
C
25_C
4 V
−55_C
3 V
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
www.vishay.com
2
Si1411DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
250
200
150
100
50
4.0
3.5
3.0
2.5
C
iss
V
GS
= 6 V
2.0
1.5
1.0
0.5
0.0
V
GS
= 10 V
C
rss
C
oss
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
30
60
90
120
150
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.5
2.0
1.5
1.0
0.5
0.0
V
D
= 75 V
V
GS
= 10 V
DS
I
= 0.5 A
I = 0.5 A
D
6
4
2
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
6
5
4
3
2
1
0
2
1
T
= 150_C
J
I
D
= 0.5 A
T
= 25_C
J
0.1
0.01
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
www.vishay.com
3
Si1411DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1.3
35
28
I
D
= 250 mA
1.0
0.7
T
= 25_C
A
Single Pulse
21
0.4
14
7
0.1
−0.2
−0.5
0
−50 −25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (sec)
T
− Temperature (_C)
J
Safe Operating Area
1
10 ms
100 ms
* Limited by
r
DS(on)
1 ms
0.1
10 ms
100 ms
1 s, 10 s
100 s, dc
0.01
T
= 25_C
A
Single Pulse
0.001
0.1
1
10
100
1000
V
− Drain-to-Source Voltage (V)
DS
*V u minimum V at which r is specified
DS(on)
GS
GS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
www.vishay.com
4
Si1411DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73242.
Document Number: 73242
S-50461—Rev. B, 14-Mar-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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