SI1431DH-T1-GE3 [VISHAY]
TRANSISTOR 1700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal;
| 型号： | SI1431DH-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 1700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1431DH
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 2.0
- 1.6
Definition
0.200 at VGS = - 10 V
0.355 at VGS = - 4.5 V
•
•
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
- 30
APPLICATIONS
•
Load Switch
- Notebook PC
- Servers
SOT-363
SC-70 (6-LEADS)
D
D
G
1
2
3
6
D
D
S
Marking Code
5
4
BF XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1431DH-T1-E3 (Lead (Pb)-free)
Si1431DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
- 30
20
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TA = 25 °C
TA = 85 °C
- 2.0
- 1.5
- 1.7
- 1.2
Continuous Drain Current (TJ = 150 °C)a
ID
A
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
IDM
IS
- 8
- 1.2
1.45
0.75
- 0.8
0.95
0.5
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 85 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
65
Maximum
Unit
t ≤ 5 s
85
130
50
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
105
40
°C/W
RthJF
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
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1
Si1431DH
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = - 100 µA
- 1
- 3
V
VDS = 0 V, VGS
=
8 V
100
- 1
nA
VDS = - 30 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 85 °C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 10 V, ID = - 2.0 A
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
µA
A
V
- 5
- 4
0.160
0.285
2
0.200
0.355
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = - 4.5 V, ID = - 1.6 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 10 V, ID = - 2.0 A
IS = - 1.2 A, VGS = 0 V
S
V
VSD
- 0.85
- 1.2
4
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
Rg
2.4
0.8
1.3
9
VDS = - 15 V, VGS = - 4.5 V, ID = - 2.0 A
f = 1.0 MHz
nC
Ω
td(on)
tr
td(off)
tf
55
40
10
10
80
60
20
20
V
DD = - 15 V, RL = 15 Ω
ns
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
8
T
= - 55 °C
25 °C
C
V
GS
= 10 V thru 6 V
8
5 V
6
6
125 °C
4
4
4 V
3 V
2
2
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
)
10
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V
GS
DS
Transfer Characteristics
Output Characteristics
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Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
Si1431DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
300
250
200
150
100
50
0.80
0.70
0.60
C
iss
V
GS
= 4.5 V
0.50
0.40
0.30
0.20
0.10
0.00
V
GS
= 10 V
C
oss
C
rss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
I
D - Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 2.0 A
I
D
= 2.0 A
V
GS
= 10 V
V
DS
= 15 V
6
4
2
0
0
1
2
3
4
5
- 50 - 25
0
25
50
75
100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Q
- Total Gate Charge (nC)
g
Gate Charge
1.00
0.80
0.60
0.40
0.20
0.00
10
T
= 150 °C
J
1
I
D
= 2.0 A
T
= 25 °C
J
0.1
0
2
4
6
8
10
0.00
0.3
V
0.6
0.9
1.2
1.5
V
- Gate-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
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3
Si1431DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.9
35
28
0.6
I
D
= 250 µA
21
0.3
0.0
14
7
T
A
= 25 °C
- 0.3
- 0.6
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
T - Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
10 µs
Limited by
R
*
(DS)on
100 µs
1
1 ms
10 ms
0.1
100 ms
T
= 25 °C
A
Single Pulse
1 s, 10 s
100 s, DC
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V > minimum V at which R is specified
GS
GS
DS(on)
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 105°C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
Si1431DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72694.
Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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