SI1469DH-T1-E3 [VISHAY]
P-Channel 20-V (G-S) MOSFET; P通道20 -V （G -S ）的MOSFET
| 型号： | SI1469DH-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (G-S) MOSFET |
| 文件： | 总7页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1469DH
Vishay Siliconix
New Product
P-Channel 20-V (G-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
I
D (A)c
VDS (V)
rDS(on) (Ω)
Qg (Typ)
0.080 at VGS = - 10 V
0.100 at VGS = - 4.5 V
0.155 at VGS = - 2.5 V
- 1.6
- 1.6
- 1.6
APPLICATIONS
RoHS
- 20
5.5 nC
COMPLIANT
•
Load Switch for Portable Devices
SOT-363
SC-70 (6-LEADS)
S
D
D
G
1
2
3
6
D
D
S
Marking Code
BL XX
5
4
Lot Traceability
and Date Code
G
Part #
Code
Top View
Ordering Information: Si1469DH-T1-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 20
12
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
-1.6c
- 1.6c
- 1.6a, b, c
- 1.6a, b, c
- 6.5c
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)a, b
ID
TA = 25 °C
TA = 70 °C
A
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Currenta, b
- 1.6c
- 1.6a, b, c
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
2.78
1.78
Maximum Power Dissipationa, b
PD
W
2.5a, b
TA = 25 °C
1a, b
- 55 to 150
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, d
RthJA
t ≤ 5 sec
60
34
80
45
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 sec.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 74441
S-70195-Rev. A, 29-Jan-07
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1
Si1469DH
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
- 21
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.4
VDS = VGS, ID = - 250 µA
- 0.6
- 1.5
- 100
- 1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≤ 5 V, VGS = - 4.5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
ID(on)
- 3
VGS = - 10 V, ID = - 2.0 A
0.065
0.081
0.126
6
0.080
0.100
0.155
Drain-Source On-State Resistancea
rDS(on)
V
GS = - 4.5 V, ID = - 1.8 A
GS = - 2.5 V, ID = - 1.5 A
Ω
V
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 2.0 A
S
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
470
105
80
5.5
0.8
1.7
10
27
48
27
15
5
VDS = - 10 V, VGS = 0 V, f = 1 MHz
pF
8.5
Qgs
Qgd
Rg
VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A
f = 1 MHz
nC
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
41
72
41
23
10
30
33
18
V
DD = - 10 V, RL = 5 Ω
ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
20
22
9
V
DD = - 10 V, RL = 5 Ω
ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
IS
ISM
VSD
trr
TC = 25 °C
- 1.6
- 6.5
- 1.2
30
A
IS = - 2 A, VGS = 0 V
Body Diode Voltage
- 0.83
20
8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
15
IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C
7
ns
tb
Reverse Recovery Rise Time
13
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74441
S-70195-Rev. A, 29-Jan-07
Si1469DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= 10 thru 3 V
8
6
4
2
0
T
= 125 °C
C
2 V
T
= 25 °C
1.0
C
= - 55 °C
2.0
T
C
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.5
1.5
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
800
640
480
320
160
0
0.20
0.16
0.12
0.08
0.04
0.00
C
iss
V
= 2.5 V
GS
V
GS
= 4.5 V
= 10 V
V
GS
C
oss
C
rss
0.0
1.4
2.8
4.2
5.6
7.0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 2.5 A
I
D
= 2 A
V
GS
= 2.5 V
V
DS
= 5 V
V
= 10 V
DS
6
V
GS
= 10 V
V
DS
= 15 V
4
2
0
0
3
6
9
12
15
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74441
S-70195-Rev. A, 29-Jan-07
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Si1469DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
0.4
0.3
0.2
0.1
0.0
10
I
D
= 2 A
T
J
= 150 °C
1
T
J
= 25 °C
0.1
125 °C
25 °C
0.01
0
2
4
6
8
10
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.3
30
24
18
12
6
I
D
= 5 mA
0.2
I
D
= 250 µA
0.1
0.0
- 0.1
- 0.2
0
- 50 - 25
0
25
50
75
100 125 150
0.1
0.001
0.01
1
10
T
- Temperature (°C)
Time (sec)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
Limited by r
DS(on)
1
1 ms
10 ms
100 ms
0.1
1 s
10 s
dc
T
= 25 °C
C
Single Pulse
0.01
0.01
10
- Drain-to-Source Voltage (V)
100
0.1
1
V
DS
*V
GS
minimum V at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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Document Number: 74441
S-70195-Rev. A, 29-Jan-07
Si1469DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.5
2.8
2.1
1.4
0.7
0.0
5
4
3
2
1
0
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
- Case Temperature (°C)
C
C
Power Derating, Junction-to-Foot
Current Derating*
1.20
0.96
0.72
0.48
0.24
0.00
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74441
S-70195-Rev. A, 29-Jan-07
www.vishay.com
5
Si1469DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 125 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74441.
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Document Number: 74441
S-70195-Rev. A, 29-Jan-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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