SI1472DH-T1-GE3 [VISHAY]
TRANSISTOR 4200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal;
| 型号： | SI1472DH-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 4200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1472DH
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
5.6a
4.7
Qg (Typ.)
Definition
0.057 at VGS = 10 V
0.082 at VGS = 4.5 V
•
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
30
5.5
Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
Load Switch for Portable Devices
•
D
D
G
1
6
5
D
D
S
Marking Code
AL XX
2
3
Lot Traceability
and Date Code
4
Part # Code
Top View
Ordering Information: Si1472DH-T1-E3 (Lead (Pb-free)
Si1472DH-T1-GE3 (Lead (Pb-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
5.6
4.5
Continuous Drain Current (TJ = 150 °C)a
ID
4.2b, c
3.4b, c
15
A
Pulsed Drain Current
Avalanche Current
IDM
IAS
10
L = 0.1 mH
TC = 25 °C
Repetitive Avalanche Energy
EAS
5
mJ
A
2.3
1.3b, c
Continuous Source-Drain Diode Current
IS
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
2.8
1.8
Maximum Power Dissipationa
PD
W
1.5b, c
1.0b, c
- 55 to 150
Operating Junction and Storage Temperature Range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
60
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 5 s
80
45
°C/W
Steady
RthJF
34
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
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1
Si1472DH
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
30
V
25.15
5.6
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = 250 µA
1
3
V
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
nA
µA
A
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
VDS = ≥ 5 V, VGS = 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
RDS(on)
gfs
10
15
VGS = 10 V, ID = 4.2 A
0.046
0.065
8.5
0.057
0.082
Drain-Source On-State Resistancea
Ω
V
GS = 4.5 V, ID = 3.5 A
Forward Transconductance
Dynamicb
VDS = 15 V, ID = 4.2 A
S
Input Capacitance
Ciss
Coss
Crss
380
75
45
7
Output Capacitance
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 4.2 A
pF
11
5
Total Gate Charge
Qg
3.3
1.2
1.0
7.1
7.0
56
18
5.5
15
95
12
7
nC
Ω
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
V
DS = 24V, VGS = 4.5 V, ID = 4.2 A
f = 1 MHz
10.6
11
84
27
9
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
V
DD = 15 V, RL = 4.4 Ω
ns
ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
23
143
18
11
V
DD = 15 V, RL = 5.4 Ω
ns
ID ≅ 2.8 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 1.8 A
2.3
15
A
Body Diode Voltage
0.8
12.3
5
1.2
19
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
nC
Qrr
ta
7.5
IF = 2.3 A, dI/dt = 100 A/µs
7.6
4.7
ns
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
Si1472DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
15
12
9
3
2
1
0
V
= 10 V thru 5 V
GS
V
GS
= 4 V
6
T
= 125 °C
C
3
T
C
= 25 °C
= 3 V
V
GS
- 55 °C
4
T
C
=
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
5
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics Curves vs. Temperature
0.10
0.08
0.06
0.04
0.02
0.00
500
400
300
200
100
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
3
6
9
12
15
0
6
12
18
24
30
V
- Drain-to-Source Voltage (V)
DS
I
- Drain Current (A)
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.5
1.2
0.9
0.6
I
D
= 4.2 A
V
DS
= 15 V
V
GS
= 10 V
6
I
D
= 4.2 A
V
= 24 V
GS
V
GS
= 4.5 V
I
D
= 3.4 A
4
2
0
0
2
4
6
8
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
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Si1472DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
0.10
0.08
0.06
0.04
0.02
10
I
= 4.2 A
D
T
= 125 °C
A
1
T
J
= 150 °C
T
J
T = 25 °C
A
= 25 °C
0.1
0.01
0
2
4
6
8
10
0
0.4
0.6
0.8
1.0
0.2
V
GS
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
SD
RDS(on) vs. VGS vs. Temperature
Source-Drain Diode Forward Voltage
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
30
25
I
D
= 250 µA
20
15
10
5
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
1
10
100
600
0.1
T
J
- Temperature (°C)
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
P(t) = 10 ms
P(t) = 100 ms
P(t) = 1 s
P(t) = 10 s
DC
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V
> minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
Si1472DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
- Case Temperature (°C)
T
C
- Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
www.vishay.com
5
Si1472DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 100 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73891.
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Document Number: 73891
S10-0646-Rev. C, 22-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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