SI1488DH-T1-E3 [VISHAY]
N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET
| 型号： | SI1488DH-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1488DH
Vishay Siliconix
New Product
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
100 % Rg & UIS Tested
6.1a
5.7
0.049 at VGS = 4.5 V
0.056 at VGS = 2.5 V
0.065 at VGS = 1.8 V
RoHS
APPLICATIONS
COMPLIANT
20
6.0
•
Load Switch for Portable Devices
5.3
SOT-363
SC-70 (6-LEADS)
D
D
D
G
1
2
3
6
5
D
D
S
Marking Code
AG XX
G
Lot Traceability
and Date Code
4
Part # Code
S
Top View
Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
8
TC = 25 °C
TC = 70 °C
6.1
4.9
Continuous Drain Current (TJ = 150 °C)a
ID
4.6b, c
3.7b, c
20
TA = 25 °C
A
TA = 70 °C
IDM
IAS
Pulsed Drain Current
Avalanche Current
10
L = 0.1 mH
EAS
Repetitive Avalanche Energy
5
mJ
A
TC = 25 °C
TA = 25 °C
2.3
1.3b, c
IS
Continuous Source-Drain Diode Current
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
2.8
1.8
Maximum Power Dissipationa
PD
W
1.5b, c
1.0b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 5 sec
60
34
80
45
°C/W
RthJF
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 73788
S-61085–Rev. C, 19-Jun-06
www.vishay.com
1
Si1488DH
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
VGS = 0 V, ID = 250 µA
ID = 250 µA
Min
Typ
Max
Unit
V
Static
VDS
Drain-Source Breakdown Voltage
20
V
DS Temperature Coefficient
ΔVDS/TJ
20.2
ΔVGS(th)
/
mV/°C
VGS(th) Temperature Coefficient
- 2.75
TJ
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.45
20
0.95
100
1
V
VDS = 0 V, VGS
=
8 V
nA
µA
µA
A
VDS = 20 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
DS = 20 V, VGS = 0 V, TJ = 85 °C
10
ID(on)
V
DS = ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 4.6 A
VGS = 2.5 V, ID = 4.3 A
0.041
0.047
0.054
15
0.049
0.056
0.065
Drain-Source On-State Resistancea
rDS(on)
gfs
Ω
V
GS = 1.8 V, ID = 3.9 A
VDS = 10 V, ID = 4.6 A
Forward Transconductance
mS
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
530
100
48
VDS = 10 V, VGS = 0 V, f = 1 MHz
DS = 10 V, VGS = 5 V, ID = 4.6 A
pF
V
6.6
6
10
9
Qg
Total Gate Charge
pC
Ω
Qgs
Qgd
Rg
V
DS = 10 V, VGS = 4.5 V, ID = 4.6 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
1.5
0.9
7.3
8.5
45
Gate Resistance
11
13
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
V
DD = 10 V, RL = 2.7 Ω
68
ns
ID ≅ 3.7 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off DelayTime
35
53
Fall Time
82
123
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
VSD
trr
TC = 25 °C
IS = 2.2 A
2.3
20
A
Body Diode Voltage
0.8
10.6
3.7
1.2
16
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
nC
Qrr
ta
5.7
IF = 3.2 A, di/dt = 100 A/µs
6.2
ns
tb
4.4
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73788
S-61085–Rev. C, 19-Jun-06
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
20
15
10
5
5
4
3
2
1
0
V
= 5 V thru 2.5 V
GS
V
= 2 V
GS
V
GS
= 1.5 V
T
= 25 °C
J
T
J
= 125 °C
0.4
V
GS
= 1 V
T
= - 55 °C
1.6
J
0
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.8
1.2
2.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics curves vs. Temp
0.09
0.08
0.07
0.06
0.05
0.04
0.03
800
600
400
200
0
C
iss
V
GS
= 1.8 V
V
GS
= 2.5 V
C
oss
V
= 4.5 V
GS
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 4.6 A
4
3
2
1
0
V
GS
V
GS
= 2.5 V, I = 4.3 A
D
V
= 10 V
DS
= 1.8 V, I = 3.9 A
D
V
DS
= 16 V
V
GS
= 4.5 V, I = 4.6 A
D
0
2
g
4
6
8
- 50 - 25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (°C)
J
Qg - Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73788
S-61085–Rev. C, 19-Jun-06
www.vishay.com
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Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
0.12
0.09
0.06
0.03
0.00
20
10
I
= 4.6 A
D
1
0.1
T
= 150 °C
T
= 25 °C
J
J
T
A
= 125 °C
T
A
= 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
rDS(on) vs VGS vs Temperature
1.0
0.8
0.6
0.4
0.2
0.0
30
25
I
D
= 250 µA
20
15
10
5
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
1
10
100
600
0.1
T
J
– Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power
100
* Limited by r
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
dc
BVDSS Limited
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V at which r
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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Document Number: 73788
S-61085–Rev. C, 19-Jun-06
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
3.5
2.8
2.1
1.4
0.7
0.0
8
6
4
2
0
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Case Temperature (°C)
T
C
– Case Temperature (°C)
C
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73788
S-61085–Rev. C, 19-Jun-06
www.vishay.com
5
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
0.02
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 100 °C/W
thJA
(t)
3. T – T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73788.
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Document Number: 73788
S-61085–Rev. C, 19-Jun-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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