SI1865DL [VISHAY]
Load Switch with Level-Shift; 与电平转换负载开关
| 型号： | SI1865DL |
| 厂家： | 
VISHAY |
| 描述： | Load Switch with Level-Shift |
| 文件： | 总5页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1865DL
Vishay Siliconix
New Product
Load Switch with Level-Shift
PRODUCT SUMMARY
VDS2 (V)
rDS(on) (W)
ID (A)
0.215 @ V = 4.5 V
"1.2
"1.0
"0.7
IN
0.300 @ V = 2.5 V
IN
1.8 to 8
0.440 @ V = 1.8 V
IN
1.8ĆV Rated
FEATURES
D 215-mW Low rDS(on) TrenchFETR
D 1.8 to 8-V Input
D Low Profile, Small Footprint SC70-6 Package
D 2000-V ESD Protection On Input Switch, VON/OFF
D Adjustable Slew-Rate
D 1.5 to 8-V Logic Level Control
DESCRIPTION
The Si1865DL includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The n-channel,
with an external resistor, can be used as a level-shift to drive
the p-channel load-switch. The n-channel MOSFET has
internal ESD protection and can be driven by logic signals as
low as 1.5-V. The Si1865DL operates on supply lines from 1.8
to 8 V, and can drive loads up to 1.2 A.
APPLICATION CIRCUITS
Switching Variation
R2 @ V = 2.5 V, R1 = 20 kW
Si1865DL
IN
20
I
L
= 1 A
V
= 3 V
ON/OFF
2, 3
C = 10 mF
C
4
i
o
V
OUT
16
12
8
t
t
= 1 mF
r
V
IN
Q2
R1
C1
6
5
6
f
t
d(off)
ON/OFF
LOAD
C
o
Q1
4
t
d(on)
C
i
0
1
0
2
4
6
8
10
R2
R2 (kW)
GND
R2
Note: For R2 switching variations with other V /R1
IN
combinations See Typical Characteristics
The Si1865DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Typical 10 kW to 1 mW*
Typical 0 to 100 kW*
Typical 1000 pF
Optional Slew-Rate Control
Optional Slew-Rate Control
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 71297
S-02987—Rev. B, 29-Jan-01
www.vishay.com
1
Si1865DL
New Product
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si1865DL
SC70-6
Top View
4
2, 3
6
D2
S2
Q2
R2
D2
D2
R1, C1
ON/OFF
S2
1
2
3
6
5
R1, C1
Q1
5
ON/OFF
4
1
R2
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Input Voltage
V
8
8
IN
V
ON/OFF
V
ON/OFF Voltage
a, b
Continuous
"1.2
"3
Load Current
I
L
b, c
Pulsed
A
a
Continuous Intrinsic Diode Conduction
I
–0.4
0.4
S
a
Maximum Power Dissipation
P
W
_C
kV
D
Operating Junction and Storage Temperature Range
T , T
–55 to 150
2
J
stg
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W)
ESD
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
a
Maximum Junction-to-Ambient (continuous current)
R
260
180
320
220
thJA
thJC
C/W
Maximum Junction-to-Foot (Q2)
R
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
V
IN
= 8 V, V = 0 V
ON/OFF
1
mA
FL
V
I
S
= –0.4 A
0.85
1.1
V
SD
ON Characteristics
Input Voltage Range
V
IN
1.8
8
V
0.180
0.250
0.367
0.215
0.300
0.440
V
= 1.5 V, V = 4.5 V, I = 1.2 A
IN D
ON/OFF
On-Resistance (p-channel) @ 1 A
On-State (p-channel) Drain-Current
r
W
V
= 1.5 V, V = 2.5 V, I = 1.0 A
IN D
DS(on)
ON/OFF
V
= 1.5 V, V = 1.8 V, I = 0.7 A
ON/OFF
IN
D
V
V
v 0.2 V, V = 5 V, V
= 1.5 V
= 1.5 V
1
1
IN-OUT
IN
ON/OFF
I
A
D(on)
v 0.3 V, V = 3 V, V
IN-OUT
IN
ON/OFF
Notes
a. Surface Mounted on FR4 Board.
b.
V
= 8 V, V
= 8 V, T = 25_C.
IN
ON/OFF
A
c. Pulse test: pulse width v300 ms, duty cycle v2%.
Document Number: 71297
S-02987—Rev. B, 29-Jan-01
www.vishay.com
2
Si1865DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
V
vs. I @ V = 4.5 V
V
vs. I @ V = 2.5 V
DROP
L
IN
DROP
L
IN
1.0
0.8
0.6
0.4
0.2
0.0
0.8
0.6
0.4
0.2
0.0
V
= 1.5 to 8 V
ON/OFF
V
= 1.5 to 8 V
ON/OFF
T
= 125_C
J
T
= 125_C
J
T
= 25_C
J
T
= 25_C
J
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
I
L
– (A)
I – (A)
L
V
vs. I @ V = 1.8 V
V
vs. V @ I = 0.7 A
DROP
L
IN
DROP
IN
L
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
V
= 1.5 to 8 V
ON/OFF
V
= 1.5 to 8 V
ON/OFF
T
= 125_C
J
T
= 25_C
J
T
= 125_C
J
T
= 25_C
J
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
– (A)
1.0
1.2
1.4
1.6
I
L
V
(V)
IN
V
DROP
Variance vs. Junction Temperature
On-Resistancevs. Input Voltage
1.0
0.8
0.6
0.4
0.2
0.0
0.10
0.06
I
V
= 0.7 A
ON/OFF
I
V
= 0.7 A
= 1.5 to 8 V
ON/OFF
L
L
= 1.5 to 8 V
V
IN
= 1.8 V
0.02
V
IN
= 4.5 V
–0.02
–0.06
–0.10
T
= 125_C
J
T
= 25_C
J
–50 –25
0
25
50
75
100 125 150
0
1
2
3
4
5
6
T – Junction Temperature (_C)
J
V
IN
(V)
Document Number: 71297
www.vishay.com
S-02987—Rev. B, 29-Jan-01
3
Si1865DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized On-Resistance
Switching Variation
vs. Junction Temperature
R2 @ V = 4.5 V, R1 = 20 kW
IN
1.5
20
16
12
8
I
V
= 1 A
L
I
V
= 0.7 A
ON/OFF
L
= 3 V
ON/OFF
= 1.5 to 8 V
C = 10 mF
i
1.3
1.1
0.9
0.7
0.5
C
= 1 mF
o
t
f
t
d(off)
V
= 1.8 V
IN
V
IN
= 4.5 V
t
r
4
t
d(on)
0
–50 –25
0
25
50
75
100 125 150
0
2
4
6
8
10
T – Junction Temperature (_C)
R2 (kW)
J
Switching Variation
Switching Variation
R2 @ V = 2.5 V, R1 = 20 kW
R2 @ V = 1.8 V, R1 = 20 kW
IN
IN
30
24
18
12
6
20
I
V
= 1 A
ON/OFF
t
r
L
I
V
= 1 A
L
= 3 V
= 3 V
ON/OFF
C = 10 mF
i
o
C = 10 mF
16
12
8
i
o
t
t
r
C
= 1 mF
C
= 1 mF
f
t
d(off)
t
f
4
t
d(off)
t
d(on)
t
d(on)
0
0
0
2
4
6
8
0
2
4
6
8
10
R2 (kW)
R2 (kW)
Switching Variation
R2 @ V = 4.5 V, R1 = 300 kW
Switching Variation
R2 @ V = 2.5 V, R1 = 300 kW
IN
IN
200
160
120
80
150
120
90
60
30
0
t
d(off)
t
f
t
f
t
d(off)
I
V
= 1 A
ON/OFF
I
V
= 1 A
ON/OFF
L
L
= 3 V
= 3 V
C = 10 mF
C = 10 mF
i
o
i
o
C
= 1 mF
C
= 1 mF
t
r
t
d(on)
40
t
r
t
d(on)
0
0
20
40
60
80
100
0
20
40
60
R2 (kW)
80
100
R2 (kW)
Document Number: 71297
www.vishay.com
S-02987—Rev. B, 29-Jan-01
4
Si1865DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Variation
R2 @ V = 1.8 V, R1 = 300 kW
IN
120
90
60
30
0
t
f
t
d(off)
I
V
= 1 A
L
= 3 V
ON/OFF
C = 10 mF
i
C
= 1 mF
o
t
d(on)
t
r
0
20
40
R2 (kW)
60
80
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 320_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Dureation (sec)
Document Number: 71297
www.vishay.com
S-02987—Rev. B, 29-Jan-01
5
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