SI2311DS-T1-GE3 [VISHAY]
Small Signal Field-Effect Transistor,;
| 型号： | SI2311DS-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si2311DS
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free Option Available
VDS (V)
RDS(on) (Ω)
ID (A)
- 3.5
- 2.8
- 2.0
• TrenchFET® Power MOSFET
0.045 at VGS = - 4.5 V
0.072 at VGS = - 2.5 V
0.120 at VGS = - 1.8 V
RoHS
- 8
COMPLIANT
APPLICATIONS
•
Load Switch
TO-236
(SOT-23)
G
S
1
2
3
D
Top View
Si2311DS (C1)*
* Marking Code
Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free)
Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 8
8
V
VGS
TA = 25 °C
TA = 70 °C
- 3.5
- 2.8
- 3.0
- 2.4
Continuous Drain Current (TJ = 150 °C)a, b
ID
A
IDM
IS
Pulsed Drain Current
- 10
Continuous Source Current (Diode Conduction)a, b
- 0.8
0.96
0.62
- 0.6
0.71
0.46
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa, b
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
100
Maximum
130
Unit
t ≤ 5 s
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
140
175
°C/W
RthJF
60
75
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71813
S-80642-Rev. B, 24-Mar-08
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1
Si2311DS
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Limits
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = - 10 µA
VDS = VGS, ID = - 250 µA
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
- 8
V
- 0.45
- 0.8
100
- 1
VDS = 0 V, VGS
=
8 V
nA
µA
VDS = - 6.4 V, VGS = 0 V
DS = - 6.4 V, VGS = 0 V, TJ = 55 °C
VDS ≤ - 5 V, VGS = - 4.5 V
VDS ≤ - 5 V, VGS = - 2.5 V
VGS = - 4.5 V, ID = - 3.5 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
- 10
- 6
- 3
ID(on)
A
0.036
0.058
0.096
9.0
0.045
0.072
0.120
Drain-Source On-Resistancea
RDS(on)
V
GS = - 2.5 V, ID = - 3 A
Ω
V
GS = - 1.8 V, ID = - 0.7 A
Forward Transconductancea
Diode Forward Voltage
gfs
VDS = - 5 V, ID = - 3.5 A
IS = - 0.8 A, VGS = 0 V
S
V
VSD
- 1.2
12
Dynamicb
Qg
Qgs
Qgd
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
8.5
1.5
V
DS = - 4 V, VGS = - 4.5 V
nC
pF
ID ≅ - 3.5 A
2.1
970
485
160
VDS = - 4 V, VGS = 0 V, f = 1 MHz
Switchingb
td(on)
tr
td(off)
tf
18
45
40
45
25
65
60
65
Turn-On Time
V
DD = - 4 V, RL = 4 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
ns
Turn-Off Time
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71813
S-80642-Rev. B, 24-Mar-08
Si2311DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
12
10
8
V
GS
= 4.5 thru 2.5 V
T
= - 55 °C
C
10
8
25 °C
2 V
125 °C
6
6
1.5 V
4
4
2
2
1 V, 0.5 V
0
0
0.0
0.5
V
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
1500
1250
1000
750
500
250
0
0.30
0.25
0.20
0.15
0.10
0.05
0.00
C
iss
V
GS
= 1.8 V
C
oss
V
= 2.5 V
GS
C
rss
V
= 4.5 V
GS
0
2
4
6
8
0
2
4
I
6
8
10
12
V
- Drain-to-Source Voltage (V)
- Drain Current (A)
DS
D
On-Resistance vs. Drain Current
Capacitance
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
V
D
= 4 V
V
I
= 4.5 V
DS
= 3.5 A
GS
I
= 3.5 A
D
0
2
4
6
8
10
12
14
- 50 - 25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71813
S-80642-Rev. B, 24-Mar-08
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3
Si2311DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
0.4
0.3
0.2
0.1
0.0
20
10
T
= 150 °C
J
1
T
= 25 °C
J
0.1
I
D
= 3.5 A
0.01
0
2
4
6
8
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.3
10
I
D
= 250 µA
8
0.2
6
4
2
0.1
0.0
T
A
= 25 °C
- 0.1
- 0.2
0
0.01
- 50 - 25
0
25
50
75
100 125 150
0.1
1
10
100
1000
Time (s)
T
-Temperature (°C)
J
Threshold Voltage
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
0.05
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 140 °C/W
thJA
(t)
3. T
- T = P
A
Z
JM
DM thJA
4. Surface Mounted
Single Pulse
0.01
- 4
- 3
- 2
- 1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
500
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71813.
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Document Number: 71813
S-80642-Rev. B, 24-Mar-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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VISHAY
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