SI2325DS-T1-E3 [VISHAY]
P-Channel 150-V (D-S) MOSFET; P沟道150 -V （D -S ）的MOSFET
| 型号： | SI2325DS-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 150-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si2325DS
Vishay Siliconix
New Product
P-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D Ultra Low On-Resistance
D Small Size
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
1.2 @ V = −10 V
−0.69
−0.66
GS
−150
7.7
1.3 @ V = −6.0 V
GS
D Active Clamp Circuits in DC/DC Power
Supplies
TO-236
(SOT-23)
G
S
1
2
3
D
Ordering Information: Si2325DS -T1—E3
Top View
Si2325DS (D5)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−150
DS
GS
V
V
ꢀ
2
0
T
= 25_C
= 70_C
−0.53
−0.43
−0.69
−0.55
A
a, b
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
−1.6
a, b
Continuous Source Current (Diode Conduction)
Single-Pluse Avalanche Current
Single-Pulse Avalanche Energy
I
−1.0
−0.6
S
I
AS
4.5
L = 1.0 mH
E
1.01
mJ
AS
T
= 25_C
= 70_C
1.25
0.8
0.75
0.48
A
a, b
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
ꢁ
5 sec
75
120
40
100
166
50
a
Maximum Junction-to-Ambient
R
R
thJA
Steady State
Steady State
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 73238
S-42449—Rev. A, 10-Jan-05
www.vishay.com
1
Si2325DS
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Limits
Typ
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = −250 mA
−150
−2.5
(BR)DSS
GS
D
V
V
V
= V , I = −250 mA
−4.5
ꢂ100
−1
GS(th)
DS
GS
D
I
V
= 0 V, V
=
ꢂ
2
0
V
nA
GSS
DS
DS
GS
V
= −150 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= −150 V, V = 0 V, T = 55_C
−10
DS
GS
J
a
On-State Drain Current
I
V
ꢁ
−
1
5
V
,
V
=
1
0
V
−1.6
A
D(on)
DS
GS
V
= −10 V, I = −0.5 A
1.0
1.05
2.2
1.2
1.3
GS
D
a
Drain-Source On-Resistance
r
W
DS(on)
V
= −6.0 V, I = −0.5 A
D
GS
a
Forward Transconductance
g
fs
V
= −15 V, I = −0.5 A
S
V
DS
D
Diode Forward Voltage
V
I
= −1.0 A, V = 0 V
0.7
−1.2
SD
S
GS
Dynamicb
Total Gate Charge
Q
7.7
1.5
2.5
9
12
g
V
= −75 V, V = 10 V
GS
D
DS
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
nC
W
I
ꢃ
−
0
.
5
A
R
g
f = 1.0 MHz
Input Capacitance
C
C
340
30
510
iss
Output Capacitance
Reverse Transfer Capacitance
V
= −25 V, V = 0, f = 1 MHz
pF
oss
DS
GS
C
rss
16
Switchingc
t
7
11
17
d(on)
Turn-On Time
V
D
= −75 V, R = 75 W
L
t
r
11
16
11
90
DD
ꢃ
ns
I
= −10 V
GEN
t
25
d(off)
R
= 6 W
g
Turn-Off Time
t
f
17
Body Diode Reverse Recovery Charge
Q
rr
I
= 0.5 A, di/dt = 100 A/ms
135
nC
F
Notes
a. Pulse test: PW ꢁ300 ms duty cycle ꢁ2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73238
S-42449—Rev. A, 10-Jan-05
www.vishay.com
2
Si2325DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1.6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10 thru 5 V
GS
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
C
= 125_C
4 V
25_C
−55_C
3 V
0
2
4
6
8
10
0
1
2
3
4
5
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
DS
On-Resistance vs. Drain Current
Capacitance
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
500
400
300
200
100
0
C
iss
V
= 6 V
GS
V
= 10 V
GS
C
oss
C
rss
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
30
60
90
120
150
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
2.5
2.0
1.5
1.0
0.5
0.0
V
D
= 75 V
V
D
= 10 V
GS
DS
I
= 0.5 A
I = 0.5 A
8
6
4
2
0
0
1
2
3
4
5
6
7
8
−50 −25
0
25
50
75
100 125 150
Q
g
− Total Gate Charge (nC)
T
J
− Junction Temperature (_C)
Document Number: 73238
S-42449—Rev. A, 10-Jan-05
www.vishay.com
3
Si2325DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
I
D
= 0.5 A
T = 150_C
J
1
T = 25_C
J
0.1
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
− Source-to-Drain Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
SD
Threshold Voltage
Single Pulse Power
1.3
12
10
I
D
= 250 mA
1.0
0.7
8
6
0.4
0.1
4
2
T
A
= 25_C
−0.2
−0.5
0
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
− Temperature (_C)
Time (sec)
Safe Operating Area
10
I
Limited
*r
DS(on)
Limited
DM
10 ms
100 ms
1
1 ms
0.1
10 ms
I
D(on)
Limited
100 ms
T
= 25_C
A
0.01
10 s, 1 s
dc, 100 s
Single Pulse
BV
DSS
Limited
0.001
0.1
1
10
100
1000
V
− Drain-to-Source Voltage (V)
DS
*V ꢄ minimum V at which r is specified
GS
GS
DS(on)
Document Number: 73238
S-42449—Rev. A, 10-Jan-05
www.vishay.com
4
Si2325DS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 120_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73238.
Document Number: 73238
S-42449—Rev. A, 10-Jan-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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