SI2399DS [VISHAY]
P-Channel 20 V (D-S) MOSFET; P沟道20 V （D -S ）的MOSFET
| 型号： | SI2399DS |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20 V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE Device Model Si2399DS
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
DESCRIPTION
CHARACTERISTICS
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to + 125 °C temperature ranges under the pulsed 0 V to 5 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage. A novel gate-to-drain
feedback capacitance network is used to model the gate
charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
D
C
GD
R
M
1
2
3
DBD
Gy
Gx
–
+
G
R
G
M
1
ETCV
C
GS
S
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 67605
S11-0398-Rev. A, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model Si2399DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
SIMULATED MEASURED
PARAMETER
SYMBOL
TEST CONDITIONS
DATA
DATA
UNIT
Static
Gate-Source Threshold Voltage
VGS(th)
RDS(on)
VDS = VGS, ID = - 250 μA
VGS = - 10 V, ID = - 5.1 A
VGS = - 4.5 V, ID = - 4.5 A
VDS = - 5 V, ID = - 4.6 A
IS = - 4.1 A
0.83
0.029
0.035
13
-
V
0.028
0.037
15
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
gfs
S
V
VSD
- 0.81
- 0.80
Input Capacitance
Ciss
Coss
Crss
834
181
154
9
835
180
155
10
Output Capacitance
Reverse Transfer Capacitance
VDS = - 10 V, VGS = 0 V, f = 1 MHz
pF
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A
Total Gate Charge
Qg
6
6.4
1.7
3.4
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
V
DS = - 10 V, VGS = - 2.5 V, ID = - 5.1 A
1.7
3.4
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
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Document Number: 67605
S11-0398-Rev. A, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model Si2399DS
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
5
4
3
2
1
0
20
15
10
5
V
= 5 V, 3.5 V, 3 V, 2.5 V
GS
T
= 125 °C
J
V
= 2 V
GS
T = 25 C
J
T
= - 55 ° C
1.0
J
V
= 1.5 V
GS
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
V
1.5
2.0
V
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
DS
GS
0.08
0.06
0.04
0.02
0.00
1400
1050
700
350
0
C
iss
V
V
= 2.5 V
= 4.5 V
GS
GS
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
ID
-
Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
100
10
1
5
4
3
2
1
0
I
= 5.1 A
D
V
= 10 V
DS
T
= 150 °C
J
V
= 16 V
DS
T
= 25 °C
J
0.1
0
3
6
9
12
0
0.2
0.4
0.6
0.8
1
1.2
Q
- Total Gate Charge (nC)
VSD - Source-to-Drain Voltage (V)
g
Note
Dots and squares represent measured data.
Document Number: 67605
S11-0398-Rev. A, 14-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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