SI3446DV-T1 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;


型号：	SI3446DV-T1
厂家：	VISHAY
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总5页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Si3446DV

Vishay Siliconix

N-Channel 2.5-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)( )

I_D(A)

D 100% R_gTested

0.045 @ V = 4.5 V

5.3

4.4

RoHS

COMPLIANT

0.065 @ V = 2.5

(1, 2, 5, 6) D

TSOP-6

Top View

3 mm

(3) G

2.85 mm

(4) S

Ordering Information: Si3446DV-T1

Si3446DV-T1–E3 (Lead (Pb)–free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 70_C

5.3

4.2

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.7

= 25_C

= 70_C

2.0

Maximum Power Dissipation

1.3

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

thJA

_C/W

62.5

Notes

a. Surface Mounted on FR4 Board, t v 5 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70715

S-51451—Rev. C, 01-Aug-05

www.vishay.com

Si3446DV

Vishay Siliconix

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

Gate-Body Leakage

= V , I = 250

0.6

1.6

GS(th)

= 0 V, V = "12 V

"100

GSS

= 20 V, V = 0 V

Zero Gate Voltage Drain Current

DSS

= 20 V, V = 0 V, T = 70_C

On-State Drain Current

= 5 V, V = 4.5 V

D(on)

= 4.5 V, I = 5.3 A

0.032

0.045

0.065

Drain-Source On-State Resistance

DS(on)

= 2.5 V, I = 4.4 A

Forward Transconductance

= 10 V, I = 5.3 A

Diode Forward Voltage

= 1.7 A, V = 0 V

1.2

Dynamic^b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

2.5

2.2

= 10 V, V = 4.5 V, I = 5.3 A

0.5

3.0

d(on)

= 10 V, R = 10

= 4.5 V, R = 6

GEN G

^ 1 A, V

Turn-Off Delay Time

Fall Time

100

d(off)

Source-Drain Reverse Recovery Time

= 1.7 A, di/dt = 100 A/ s

Notes

a. Pulse test; pulse width v 300 s, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

Document Number: 70715

S-51451—Rev. C, 01-Aug-05

www.vishay.com

Si3446DV

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

= 5, 4.5, 4, 3.5, 3 V

2.5 V

2 V

= 125_C

25_C

1, 1.5 V

–55_C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

– Drain-to-Source Voltage (V)

– Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

1500

1200

900

600

300

0.10

0.08

0.06

0.04

0.02

0.00

iss

= 2.5 V

= 4.5 V

oss

rss

– Drain Current (A)

– Drain-to-Source Voltage (V)

Gate Charge

On-Resistance vs. Junction Temperature

1.6

1.4

1.2

1.0

0.8

0.6

= 10 V

= 4.5 V

= 5.3 A

I = 5.3 A

–50 –25

100 125 150

– Total Gate Charge (nC)

T – Junction Temperature (_C)

Document Number: 70715

S-51451—Rev. C, 01-Aug-05

www.vishay.com

Si3446DV

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.10

0.08

0.06

0.04

0.02

0.00

= 5.3 A

= 150_C

= 25_C

0.00

0.25

0.50

0.75

1.00

1.25

1.50

– Source-to-Drain Voltage (V)

– Gate-to-Source Voltage (V)

Threshold Voltage

Single Pulse Power

0.4

0.2

= 250 A

–0.0

–0.2

–0.4

–0.6

–50 –25

100 125 150

0.01

0.10

1.00

10.00

– Temperature (_C)

Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

0.2

Notes:

0.1

0.05

1. Duty Cycle, D =

0.02

2. Per Unit Base = R

= 62.5_C/W

thJA

(t)

3. T – T = P

DM thJA

Single Pulse

4. Surface Mounted

0.01

–4

–3

–2

–1

Document Number: 70715

S-51451—Rev. C, 01-Aug-05

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

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