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SI3473CDV-T1-E3 [VISHAY]

P-Channel 12-V (D-S) MOSFET; P通道12 -V （D -S ）的MOSFET
SI3473CDV-T1-E3
型号： SI3473CDV-T1-E3
厂家： VISHAY    VISHAY
描述：

P-Channel 12-V (D-S) MOSFET
P通道12 -V （D -S ）的MOSFET

晶体 小信号场效应晶体管 开关 光电二极管
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New Product  
Si3473CDV  
Vishay Siliconix  
P-Channel 12-V (D-S) MOSFET  
FEATURES  
•
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
- 8  
•
PWM Optimized  
0.022 at VGS = - 4.5 V  
0.028 at VGS = - 2.5 V  
0.036 at VGS = - 1.8 V  
RoHS  
COMPLIANT  
APPLICATIONS  
- 12  
- 8  
26 nC  
•
Load Switch  
- 8  
•
PA Switch  
TSOP-6  
Top View  
(4) S  
1
2
3
6
3 mm  
5
4
(3) G  
Marking Code  
AR XXX  
Lot Traceability  
and Date Code  
Part # Code  
2.85 mm  
(1, 2, 5, 6) D  
Ordering Information: Si3473CDV-T1-E3 (Lead (Pb)-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
Limit  
- 12  
8
Unit  
V
VGS  
- 8a  
- 8a  
TC = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
- 8a, b, c  
TA = 25 °C  
TA = 70 °C  
- 6.5b, c  
- 20  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
- 3.5  
- 1.67b, c  
4.2  
Continuous Source-Drain Diode Current  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
2.7  
PD  
Maximum Power Dissipation  
W
2.0b, c  
1.3b, c  
TJ, Tstg  
- 55 to 150  
°C  
Operating Junction and Storage Temperature Range  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
RthJF  
Typical  
55  
Maximum  
62.5  
Unit  
t ≤ 5 s  
Steady State  
°C/W  
25  
30  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 69947  
S-80796-Rev. B, 14-Apr-08  
www.vishay.com  
1
New Product  
Si3473CDV  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Static  
VDS  
ΔVDS/TJ  
ΔVGS(th)/TJ  
VGS(th)  
VGS = 0 V, ID = - 250 µA  
ID = - 250 µA  
Drain-Source Breakdown Voltage  
- 12  
V
V
DS Temperature Coefficient  
- 13  
3
mV/°C  
VGS(th) Temperature Coefficient  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS = VGS , ID = - 250 µA  
- 0.4  
- 20  
- 1.0  
100  
- 1  
V
IGSS  
VDS = 0 V, VGS  
=
8 V  
nA  
VDS = - 12 V, VGS = 0 V  
DS = - 12 V, VGS = 0 V, TJ = 85 °C  
VDS ≤ - 5 V, VGS = - 4.5 V  
VGS = - 4.5 V, ID = - 8.1 A  
VGS = - 2.5 V, ID = - 7.1 A  
VGS = - 1.8 V, ID = - 2.8 A  
VDS = - 6 V, ID = - 8.1 A  
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
- 10  
ID(on)  
0.016  
0.021  
0.026  
30  
0.022  
0.028  
0.036  
Drain-Source On-State Resistancea  
RDS(on)  
Ω
Forward Transconductancea  
gfs  
S
Dynamicb  
Ciss  
Coss  
Crss  
Input Capacitance  
2010  
580  
520  
43  
V
DS = - 6 V, VGS = 0 V, f = 1 MHz  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
VDS = - 6 V, VGS = - 8 V, ID = - 8.1 A  
65  
40  
Total Gate Charge  
Qg  
26  
nC  
Qgs  
Qgd  
Rg  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
V
DS = - 6 V, VGS = - 4.5 V, ID = - 8.1 A  
f = 1 MHz  
3.3  
7.5  
4.8  
20  
Ω
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
30  
85  
90  
60  
15  
25  
95  
55  
55  
V
DD = - 6 V, RL = 0.92 Ω  
ID ≅ - 6.5 A, VGEN = - 4.5 V, Rg = 1 Ω  
Turn-Off Delay Time  
Fall Time  
60  
40  
ns  
Turn-On Delay Time  
Rise Time  
10  
15  
V
DD = - 6 V, RL = 0.92 Ω  
ID ≅ - 6.5 A, VGEN = - 8 V, Rg = 1 Ω  
Turn-Off Delay Time  
Fall Time  
62  
35  
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
IS = - 5.9 A  
- 3.5  
- 20  
- 1.2  
75  
A
Pulse Diode Forward Currenta  
Body Diode Voltage  
- 0.8  
50  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
ns  
nC  
Qrr  
ta  
30  
45  
IF = - 6.5 A, di/dt = 100 A/µs, TJ = 25 °C  
18  
ns  
tb  
32  
Notes:  
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 69947  
S-80796-Rev. B, 14-Apr-08  
New Product  
Si3473CDV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
20  
16  
12  
8
20  
V
GS  
= 5 thru 2 V  
16  
12  
8
V
GS  
= 1.5 V  
T
C
= 125 °C  
4
4
T
C
= 25 °C  
V
GS  
= 1 V  
T
= - 55 °C  
1.5  
C
0
0.0  
0
0.0  
0.3  
0.6  
0.9  
1.2  
1.8  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
GS  
- Gate-to-Source Voltage (V)  
V
DS  
- Drain-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
0.040  
0.035  
0.030  
0.025  
0.020  
0.015  
0.010  
3500  
3000  
2500  
2000  
1500  
1000  
500  
C
iss  
V
GS  
= 1.8 V  
V
= 2.5 V  
= 4.5 V  
GS  
C
oss  
C
rss  
V
GS  
0
0
4
8
12  
16  
20  
0
3
6
9
12  
I
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
D
On-Resistance vs. Drain Current and Gate Voltage  
Capacitance  
8
6
4
2
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
I
= 8.1 A  
D
I
= 8.1 A  
D
V
GS  
= 4.5 V, 2.5 V  
V
DS  
= 6 V  
V
GS  
= 1.8 V  
V
DS  
= 9.6 V  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
- 50 - 25  
0
25  
50  
75  
100 125 150  
T
J
- Junction Temperature (°C)  
Q
g
- Total Gate Charge (nC)  
On-Resistance vs. Junction Temperature  
Gate Charge  
Document Number: 69947  
S-80796-Rev. B, 14-Apr-08  
www.vishay.com  
3
New Product  
Si3473CDV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
100  
I
= 8.1 A  
D
T
= 150 °C  
J
10  
T
J
= 25 °C  
T
= 125 °C  
A
T
A
= 25 °C  
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
30  
25  
I
= 250 µA  
D
20  
15  
10  
5
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
- Temperature (°C)  
Time (s)  
Single Pulse Power  
J
Threshold Voltage  
100  
Limited by R  
*
DS(on)  
10  
1
1 ms  
10 ms  
100 ms  
1 s, 10 s  
DC  
0.1  
BVDSS  
T
A
= 25 °C  
Single Pulse  
0.01  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
* V > minimum V at which R is specified  
DS(on)  
GS  
GS  
Safe Operating Area  
www.vishay.com  
4
Document Number: 69947  
S-80796-Rev. B, 14-Apr-08  
New Product  
Si3473CDV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
5
4
3
2
1
0
15  
12  
9
6
3
0
Package Limited  
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
T
C
- Case Temperature (°C)  
T
C
- Case Temperature (°C)  
Current Derating*  
Power, Junction-to-Foot  
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package  
limit.  
Document Number: 69947  
S-80796-Rev. B, 14-Apr-08  
www.vishay.com  
5
New Product  
Si3473CDV  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
0.1  
P
DM  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 90 °C/W  
thJA  
(t)  
3. TJM - T = P  
4. Surface Mounted  
Z
A
DM thJA  
Single Pulse  
0.01  
-4  
10  
-3  
-2  
10  
-1  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?69947.  
www.vishay.com  
6
Document Number: 69947  
S-80796-Rev. B, 14-Apr-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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