SI3495DV [VISHAY]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | SI3495DV |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总3页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
www.vishay.com
Document Number: 73150
S-50836Rev. B, 16-May-05
1
SPICE Device Model Si3495DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Simulated Measured
Parameter
Symbol
Test Conditions
Unit
Data
Data
Static
Gate Threshold Voltage
On-State Drain Currentba
VGS(th)
ID(on)
0.66
144
V
A
V
DS = VGS, ID = −250 µA
VDS = −5 V, VGS = −4.5 V
0.021
0.025
0.030
0.035
25
0.020
0.024
0.030
0.036
25
VGS = −4.5 V, ID = −7 A
VGS = −2.5 V, ID = −6.2 A
VGS = −1.8 V, ID = −5.2 A
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = −1.5 V, ID = −3 A
DS = −5 V, ID = −7 A
S = −1.7 A, VGS = 0 V
Forward Transconductancea
Diode Forward Voltagea
gfs
S
V
V
VSD
I
−0.83
−0.62
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
22
2.5
7
25
2.5
7
nC
VDS = −10 V, VGS = −4.5 V, ID = −7 A
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
Document Number: 73150
S-50836Rev. B, 16-May-05
2
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
www.vishay.com
Document Number: 73150
S-50836Rev. B, 16-May-05
3
相关型号：
SI3552DV-E3
TRANSISTOR 2500 mA, 30 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
VISHAY
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