SI3861BDV-T1-GE3 [VISHAY]
Buffer/Inverter Based Peripheral Driver, 1 Driver, MOS, PDSO6, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6;
| 型号： | SI3861BDV-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Buffer/Inverter Based Peripheral Driver, 1 Driver, MOS, PDSO6, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总10页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3861BDV
Vishay Siliconix
Load Switch with Level-Shift
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS2 (V)
RDS(on) (Ω)
ID (A)
2.3
Definition
0.075 at VIN = 10 V
0.120 at VIN = 5.0 V
0.145 at VIN = 4.5 V
•
•
•
•
•
•
•
•
•
4.5 V Rated
4.5 to 20
1.9
ESD Protected: 3000 V
105 mΩ Low RDS(on) TrenchFET®
4.5 V to 20 V Input
1.5 V to 8 V Logic Level Control
Low Profile, Small Footprint TSOP-6 Package
3000 V ESD Protection On Input Switch, VON/OFF
Adjustable Slew-Rate
1.7
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Si3861BDV includes a P- and N-Channel MOSFET in a
single TSOP-6 package. The low on-resistance P-Channel
TrenchFET® is tailored for use as a load switch. The
N-Channel, with an external resistor, can be used as a level-
shift to drive the P-Channel load-switch. The N-Channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si3861DV operates on
supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
Si3861BDV
10
t
f
2, 3
8
6
4
2
0
4
V
OUT
V
IN
t
d(off)
Q2
R1
C1
6
5
6
t
r
ON/OFF
I
= 1 A
ON/OFF
LOAD
C
L
V
o
= 3 V
Q1
C = 10 µF
o
i
C
t
= 1 µF
d(on)
C
i
1
0
2
4
6
8
10
12
R2 (kΩ)
R2
Note: For R2 switching variations with other V /R1
IN
GND
combinations See Typical Characteristics
R2
The Si3861BDV is ideally suited for high-side load switching
in portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
COMPONENTS
R1
Pull-Up Resistor
Typical 10 kΩ to 1 mΩ*
Typical 0 to 100 kΩ*
Typical 1000 pF
R2
Optional Slew-Rate Control
Optional Slew-Rate Control
C1
Note:
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
1
New Product
Si3861BDV
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si3861BDV
TSOP-6
4
5
Top View
2, 3
6
D2
S2
Q2
R2
D2
D2
R1, C1
1
2
3
6
5
R1, C1
ON/OFF
Q1
S2
ON/OFF
4
1
Ordering Information:
Si3861BDV-T1-E3 (Lead (Pb)-free)
Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
R2
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
VIN
Input Voltage
ON/OFF Voltage
V
VON/OFF
8
Continuousa, b
Pulsedb, c
2.3
IL
Load Current
4
A
Continuous Intrinsic Diode Conductiona
Maximum Power Dissipationa
IS
PD
- 1
0.83
- 55 to 150
3
W
°C
kV
TJ, Tstg
ESD
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
120
Maximum
150
Unit
Maximum Junction-to-Ambient (Continuous Current)a
RthJA
°C/W
RthJF
Maximum Junction-to-Foot (Q2)
60
80
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Reverse Leakage Current
IFL
VIN = 30 V, VON/OFF = 0 V
IS = - 1 A
1
µA
VSD
Diode Forward Voltage
ON Characteristics
Input Voltage Range
- 0.8
- 1
V
VIN
4.5
20
V
VIN = 10 V
0.060
0.096
0.115
0.075
0.120
0.145
RDS(on)
VON/OFF = 1.5 V, ID = 1 A
V
V
IN = 5.0 V
IN = 4.5 V
On-Resistance (P-Channel) at 1 A
On-State (P-Channel) Drain-Current
Ω
VIN-OUT ≤ 0.2 V, VIN = 10 V, VON/OFF = 1.5 V
VIN-OUT ≤ 0.3 V, VIN = 5 V, VON/OFF = 1.5 V
1
1
ID(on)
A
Notes:
a. Surface Mounted on FR4 board.
b. VIN = 12 V, VON/OFF = 8 V, TA = 25 °C.
c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
New Product
Si3861BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.50
V
= 1.5 V to 8 V
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
ON/OFF
V
= 1.5 V to 8 V
ON/OFF
T
= 125 C
J
T
= 125 °C
J
T
= 25 C
J
T
3
= 25 °C
J
0
1
2
4
5
6
0
1
2
3
4
5
6
I
L
- (A)
I
L
- (A)
VDROP vs. IL at VIN = 5 V
VDROP vs. IL at VIN = 10 V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
= 1 A
ON/OFF
L
V
V
= 1.5 V to 8 V
ON/OFF
= 1.5 V to 8 V
T
= 125 °C
J
T
= 25 °C
J
T
= 125 °C
J
T
= 25 C
J
0
2
4
6
(V)
8
10
12
0
1
2
3
4
5
6
I
L
- (A)
V
IN
VDROP vs. VIN at = 1 A
VDROP vs. IL at VIN = 4.5 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.08
0.06
I
= 1 A
ON/OFF
I
= 1 A
ON/OFF
L
V
L
V
= 1.5 V to 8 V
= 1.5 V to 8 V
0.04
V
= 5 V
IN
0.02
V
= 10 V
IN
T
= 125 C
J
0.00
- 0.02
- 0.04
T
= 25 °C
2
J
0
4
6
(V)
8
10
12
- 50 - 25
0
25
50
75
100 125 150
V
IN
T - Junction Temperature (°C)
J
On-Resistance vs. Input Voltage
VDROP Variance vs. Junction Temperature
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
3
New Product
Si3861BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
18
16
14
12
10
8
I
= 1 A
ON/OFF
L
V
i
= 3 V
t
f
1.6
V
= 10 V
IN
C = 10 µF
C
= 1 µF
o
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
IN
= 5 V
t
d(off)
t
6
d(on)
t
r
I
L
= 1 A
4
V
= 1.5 V to 8 V
ON/OFF
2
0
- 100
- 50
0
50
100
150
200
0
2
4
6
8
10
12
T - Junction Temperature ( C)
J
R2 (k )
Normalized On-Resistance
vs. Junction Temperature
Switching Variation
R2 at VIN = 10 V, R1 = 20 kΩ
10
8
14
12
10
8
t
f
I
= 1 A
ON/OFF
L
V
i
= 3 V
C = 10 µF
C
t
r
= 1 µF
o
t
d(off)
6
t
f
t
r
6
t
4
d(off)
t
d(on)
t
d(on)
4
I
= 1 A
ON/OFF
L
V
2
= 3 V
2
C = 10 µF
o
i
C
= 1 µF
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
R2 (kΩ)
R2 (kΩ)
Switching Variation
R2 at VIN = 5 V, R1 = 20 kΩ
Switching Variation
R2 at VIN = 4.5 V, R1 = 20 kΩ
250
200
150
100
50
120
100
80
60
40
20
0
t
d(off)
t
d(off)
t
f
I
= 1 A
ON/OFF
L
V
i
= 3 V
C = 10 µF
C
= 1 µF
o
t
I
= 1 A
ON/OFF
f
L
V
i
= 3 V
C = 10 µF
C
t
d(on)
= 1 µF
o
t
r
t
r
t
d(on)
0
0
20
40
60
R2 (kΩ)
Switching Variation
R2 at VIN = 10 V, R1 = 300 kΩ
80
100
120
0
20
40
60
R2 (kΩ)
Switching Variation
R2 at VIN = 5 V, R1 = 300 kΩ
80
100
120
www.vishay.com
4
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
New Product
Si3861BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
t
f
100
t
d(off)
80
60
40
20
0
I
= 1 A
ON/OFF
L
V
i
= 3 V
t
r
C = 10 µF
C
= 1 µF
o
t
d(on)
0
20
40
60
R2 (kΩ)
Switching Variation
80
100
120
R2 at VIN = 4.5 V, R1 = 300 kΩ
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 150 C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-1
-4
-3
-2
10
10
10
10
1
10
100
600
Square Wave Pulse Dureation (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73343.
Document Number: 73343
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
5
Package Information
Vishay Siliconix
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
5
4
3
6
1
4
E
1
E
E
1
E
1
2
2
3
-B-
-B-
e
e
b
b
M
M
C
0.15
C
B
A
0.15
B A
5-LEAD TSOP
6-LEAD TSOP
4x
1
-A-
D
0.17 Ref
c
R
R
A
2
A
L
2
Gauge Plane
Seating Plane
Seating Plane
L
0.08
C
A
1
-C-
(L )
1
4x
1
MILLIMETERS
INCHES
Dim
A
A1
A2
b
c
D
E
E1
e
Min
Nom
-
Max
Min
0.036
0.0004
0.035
0.012
0.004
0.116
0.106
0.061
Nom
-
Max
0.91
0.01
0.90
0.30
0.10
2.95
2.70
1.55
1.10
0.10
1.00
0.45
0.20
3.10
2.98
1.70
0.043
0.004
0.039
0.018
0.008
0.122
0.117
0.067
-
-
-
0.32
0.15
3.05
2.85
1.65
0.95 BSC
1.90
-
0.038
0.013
0.006
0.120
0.112
0.065
0.0374 BSC
0.075
-
1.80
2.00
0.50
0.071
0.012
0.079
0.020
e1
L
0.32
0.60 Ref
0.25 BSC
-
0.024 Ref
0.010 BSC
-
L1
L2
R
0.10
0
-
0.004
0
-
4
8
4
8
7
Nom
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Document Number: 71200
18-Dec-06
www.vishay.com
1
AN823
Vishay Siliconix
Mounting LITTLE FOOTR TSOP-6 Power MOSFETs
Surface mounted power MOSFET packaging has been based on
integrated circuit and small signal packages. Those packages
have been modified to provide the improvements in heat transfer
required by power MOSFETs. Leadframe materials and design,
molding compounds, and die attach materials have been
changed. What has remained the same is the footprint of the
packages.
Since surface mounted packages are small, and reflow soldering
is the most common form of soldering for surface mount
components, “thermal” connections from the planar copper to the
pads have not been used. Even if additional planar copper area is
used, there should be no problems in the soldering process. The
actual solder connections are defined by the solder mask
openings. By combining the basic footprint with the copper plane
on the drain pins, the solder mask generation occurs automatically.
The basis of the pad design for surface mounted power MOSFET
is the basic footprint for the package. For the TSOP-6 package
outline drawing see http://www.vishay.com/doc?71200 and see
http://www.vishay.com/doc?72610 for the minimum pad footprint.
In converting the footprint to the pad set for a power MOSFET, you
must remember that not only do you want to make electrical
connection to the package, but you must made thermal connection
and provide a means to draw heat from the package, and move it
away from the package.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low impedance
path for heat to move away from the device.
REFLOW SOLDERING
In the case of the TSOP-6 package, the electrical connections are
very simple. Pins 1, 2, 5, and 6 are the drain of the MOSFET and
are connected together. For a small signal device or integrated
circuit, typical connections would be made with traces that are
0.020 inches wide. Since the drain pins serve the additional
function of providing the thermal connection to the package, this
level of connection is inadequate. The total cross section of the
copper may be adequate to carry the current required for the
application, but it presents a large thermal impedance. Also, heat
spreads in a circular fashion from the heat source. In this case the
drain pins are the heat sources when looking at heat spread on the
PC board.
Vishay Siliconix surface-mount packages meet solder reflow
reliability requirements. Devices are subjected to solder reflow as a
test preconditioning and are then reliability-tested using
temperature cycle, bias humidity, HAST, or pressure pot. The
solder reflow temperature profile used, and the temperatures and
time duration, are shown in Figures 2 and 3.
Figure 1 shows the copper spreading recommended footprint for
the TSOP-6 package. This pattern shows the starting point for
utilizing the board area available for the heat spreading copper. To
create this pattern, a plane of copper overlays the basic pattern on
pins 1,2,5, and 6. The copper plane connects the drain pins
electrically, but more importantly provides planar copper to draw
heat from the drain leads and start the process of spreading the
heat so it can be dissipated into the ambient air. Notice that the
planar copper is shaped like a “T” to move heat away from the
drain leads in all directions. This pattern uses all the available area
underneath the body for this purpose.
0.167
4.25
Ramp-Up Rate
+6_C/Second Maximum
120 Seconds Maximum
70 − 180 Seconds
240 +5/−0_C
0.074
1.875
Temperature @ 155 " 15_C
Temperature Above 180_C
Maximum Temperature
Time at Maximum Temperature
Ramp-Down Rate
0.014
0.35
0.122
3.1
0.026
0.65
20 − 40 Seconds
+6_C/Second Maximum
0.049
1.25
0.049
1.25
0.010
0.25
FIGURE 2. Solder Reflow Temperature Profile
FIGURE 1. Recommended Copper Spreading Footprint
Document Number: 71743
27-Feb-04
www.vishay.com
1
AN823
Vishay Siliconix
10 s (max)
255 − 260_C
1X4_C/s (max)
3-6_C/s (max)
217_C
140 − 170_C
60 s (max)
3_C/s (max)
60-120 s (min)
Reflow Zone
Pre-Heating Zone
Maximum peak temperature at 240_C is allowed.
FIGURE 3. Solder Reflow Temperature and Time Durations
THERMAL PERFORMANCE
On-Resistance vs. Junction Temperature
A basic measure of a device’s thermal performance is the
junction-to-case thermal resistance, Rqjc, or the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
1.6
1.4
1.2
1.0
0.8
0.6
V
= 4.5 V
GS
I
D
= 6.1 A
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rq
30_C/W
jf
−50 −25
0
25
50
75
100 125 150
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
T
− Junction Temperature (_C)
J
FIGURE 4. Si3434DV
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
Document Number: 71743
27-Feb-04
www.vishay.com
2
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
(2.510)
0.039
0.020
0.019
(1.001)
(0.508)
(0.493)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
26
Document Number: 72610
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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SI9137DB
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