SI4164DY [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V (D -S )的MOSFET型号: | SI4164DY |
厂家: | VISHAY |
描述: | N-Channel 30-V (D-S) MOSFET |
文件: | 总7页 (文件大小:141K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New Product
Si4164DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
30
RoHS
0.0032 at VGS = 10 V
0.0039 at VGS = 4.5 V
COMPLIANT
30
26.5 nC
26.3
APPLICATIONS
•
DC/DC Conversion
- Low-Side Switch
•
•
Notebook PC
Gaming
SO-8
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4164DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
30
Unit
V
20
T
C = 25 °C
TC = 70 °C
A = 25 °C
30
22.6
Continuous Drain Current (TJ = 150 °C)
ID
21.5b, c
17.1b, c
70
T
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
5.4
2.7b, c
40
Continuous Source-Drain Diode Current
T
A = 25 °C
L = 0.1 mH
C = 25 °C
IAS
EAS
Single Pulse Avalanche Current
Avalanche Energy
mJ
W
80
6.0
3.3
3.0b, c
1.9b, c
T
TC = 70 °C
A = 25 °C
TA = 70 °C
PD
Maximum Power Dissipation
T
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
33
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
42
21
°C/W
16
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
www.vishay.com
1
New Product
Si4164DY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 1 mA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
27
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 5.6
VDS = VGS , ID = 250 µA
1.2
30
2.5
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
0.0026
0.0032
75
0.0032
0.0039
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
VDS = 15 V, ID = 15 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3545
650
240
62
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
VDS = 15 V, VGS = 10 V, ID = 10 A
95
40
Qg
Total Gate Charge
26.5
8.5
7.3
1.1
35
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
0.2
2.2
60
30
85
30
35
16
75
18
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
16
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
48
16
ns
Turn-On Delay Time
Rise Time
18
8
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
41
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 3 A
5.4
70
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.72
33
1.1
65
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
27
54
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
17
ns
tb
16
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68870
S-82015-Rev. A, 01-Sep-08
New Product
Si4164DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
8
V
GS
= 10 thru 4 V
56
42
28
14
0
V
GS
= 3 V
6
4
T
C
= 25 °C
2
T
C
= 125 °C
1
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
3
4
5
V - Gate-to-Source Voltage (V)
GS
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
4500
3600
2700
1800
900
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
14
28
42
56
70
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
= 15 A
D
I
= 10 A
D
V
GS
= 10 V
V
= 15 V
DS
V
= 10 V
DS
6
V
DS
= 20 V
V
GS
= 4.5 V
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
13
26
39
52
65
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
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3
New Product
Si4164DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.025
100
10
I
= 15 A
D
0.020
0.015
0.010
0.005
0.000
T
J
= 150 °C
T
J
= 25 °C
1
0.1
0.01
T
= 125 °C
= 25 °C
J
T
J
0.001
0
1
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
0.4
0.2
0.0
- 0.2
- 0.4
- 0.6
- 0.8
I
= 5 mA
D
I
= 250 µA
D
40
0
- 50 - 25
0
25
50
75
100 125 150
0.1
0.001
0.01
1
10
Time (s)
T
J
- Temperature (°C)
Single Pulse Power
Threshold Voltage
100
Limited by R
DS(on)*
10
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
DC
T
= 25 °C
C
Single Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 68870
S-82015-Rev. A, 01-Sep-08
New Product
Si4164DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
7.5
6.0
4.5
3.0
1.5
0.0
28
21
14
7
0
0
25
50
75
100
125
150
0
25
50
T - Case Temperature (°C)
C
75
100
125
150
T
- Case Temperature (°C)
C
Current Derating*
Power Derating, Junction-to-Foot
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
www.vishay.com
5
New Product
Si4164DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68870.
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Document Number: 68870
S-82015-Rev. A, 01-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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