SI4300DY [VISHAY]
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode; N通道30 -V （ DS ） ，减少的Qg快速开关MOSFET与肖特基二极管
| 型号： | SI4300DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode |
| 文件： | 总5页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4300DY
Vishay Siliconix
N-Channel 30-V (D-S), Reduced Qg
Fast Switching MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D TrenchFETr Power MOSFET
D LITTLE FOOT Plust Integrated Schottky
D PWM Optimized
0.0185 @ V = 10 V
9
7
GS
30
0.033 @ V = 4.5 V
GS
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
D Low Power Sychronous Rectification
VSD (v)
Diode Forward Voltage
VDS (V)
IF (A)
30
0.5 V @ 1 A
2.0
SO-8
D
K
S/A
D/K
D/K
D/K
D/K
1
2
3
4
8
7
6
5
S/A
S/A
G
Schottky Diode
G
N-Channel MOSFET
Top View
Ordering Information: Si4300DY
S
A
Si4300DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage (MOSFET)
V
30
30
DS
DA
GS
Reverse Voltage (Schottky)
Gate-Source Voltage
V
V
V
"20
T
= 25_C
= 70_C
9
7
6.4
5.1
A
Continuous Drain Current (T = 150_C)
J
I
D
a
(MOSFET)
T
A
Pulsed Drain Current (MOSFET)
I
I
40
20
DM
A
a
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
I
S
2.3
2.3
1.25
1.25
I
F
Pulsed Foward Current (Schottky)
FM
T
= 25_C
2.5
1.6
2.2
1.4
1.38
0.88
1.25
0.80
A
a
Maximum Power Dissipation (MOSFET)
T
A
= 70_C
= 25_C
= 70_C
P
W
D
T
A
a
Maximum Power Dissipation (Schottky)
T
A
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Typ
Max
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
40
70
18
50
90
23
45
78
25
55
100
30
a
Maximum Junction-to-Ambient
R
thJA
thJF
Steady-State
Steady-State
_C/W
Maximum Junction-to-Foot (Drain)
R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
Si4300DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED).
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.8
V
GS(th)
DS
GS
D
I
V
DS
= 0 V, V = "20 V
"100
100
nA
GSS
GS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 85_C
2000
GS
J
b
On-State Drain Current
I
V
5 V, V = 10 V
30
A
w
D(on)
DS
GS
V
= 10 V, I = 9 A
0.0155
0.0275
16
0.0185
0.033
GS
GS
D
b
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 7 A
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 9 A
S
V
DS
D
b
Schottky Diode Forward Voltage
V
SD
I
S
= 1.0 A, V = 0 V
0.47
0.5
13
GS
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
8.7
2.25
4.2
g
Q
Q
V
= 15 V, V = 5 V, I = 9 A
nC
gs
gd
DS
GS
D
R
g
0.5
2.7
16
15
30
15
60
W
t
11
8
d(on)
t
r
V
DD
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
I
D
^ 1 A, V
Turn-Off Delay Time
Fall Time
t
22
9
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= 2.3 A, di/dt = 100 A/ms
32
F
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
= 1.0 A
0.47
0.36
0.004
0.7
0.5
0.42
0.100
10
F
Forward Voltage Drop
V
V
F
I
= 1.0 A, T = 125_C
F
J
V = 24 V
r
V = 24 V, T = 100_C
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
mA
pF
r
J
V = -24 V, T = 125_C
3.0
20
r
J
V = 10 V
r
C
50
T
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-2
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
GS
= 10 thru 5 V
32
24
16
8
4 V
T
= 125_C
C
3 V
25_C
-55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1200
1000
800
600
400
200
0
0.15
0.12
0.09
0.06
0.03
0.00
C
C
iss
oss
V
GS
= 4.5 V
V
GS
= 10 V
C
rss
0
8
16
24
32
40
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
= 9 A
V
= 10 V
GS
= 9 A
DS
D
I
D
6
4
2
0
0
3
6
9
12
15
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-3
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
50
10
0.16
0.12
0.08
0.04
0.00
I
D
= 9 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.6
0.4
30
25
I
D
= 250 mA
0.2
20
15
10
5
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0
-50
-25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-4
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
10
T
= 150_C
J
1
30 V
0.1
T
= 25_C
J
24 V
0.01
0.001
0.0001
1
0.0
0
25
50
75
100
125
150
0.3
0.6
0.9
1.2
1.5
T
- Temperature (_C)
V - Forward Voltage Drop (V)
F
J
Capacitance
200
160
120
80
40
0
C
oss
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-5
相关型号：
SI4300DY-T1
TRANSISTOR 6400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal
VISHAY
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