SI4403BDY-T1 [VISHAY]
P-Channel 1.8-V (G-S) MOSFET; P沟道1.8 -V （G -S ）的MOSFET
| 型号： | SI4403BDY-T1 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 1.8-V (G-S) MOSFET |
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4403BDY
Vishay Siliconix
New Product
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
VDS (V)
rDS(on) (W)
ID (A)
0.017 @ V = -4.5 V
-9.9
-8.5
-7.2
GS
-20
0.023 @ V = -2.5
V
V
GS
0.032 @ V = -1.8
GS
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
Ordering Information: Si4403BDY
Si4403BDY-T1 (with Tape and Reel)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
-20
DS
V
"8
GS
T
= 25_C
= 70_C
-7.3
-5.8
-9.9
-7.9
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
-30
DM
a
continuous Source Current (Diode Conduction)
I
-2.3
2.5
-1.3
1.35
0.87
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.6
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
43
71
19
50
92
25
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
www.vishay.com
1
Si4403BDY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = -350 mA
-0.45
-1.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "8 V
GS
I
"100
nA
GSS
V
= -16 V, V = 0 V
-1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= -16 V, V = 0 V, T = 70_C
-10
GS
J
a
On-State Drain Current
I
V
DS
= -5 V, V = -4.5 V
20
A
D(on)
GS
V
= -4.5 V, I = -9.9 A
0.014
0.018
0.017
0.023
GS
GS
GS
D
a
V
V
= -2.5 V, I = -8.5 A
D
Drain-Source On-State Resistance
r
W
DS(on)
0.024
0.032
= -1.8 V, I = -3.1 A
D
a
Forward Transconductance
g
V
= -15 V, I = -9.9 A
36
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= -2.3 A, V = 0 V
-0.8
-1.1
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
33
4.2
7.6
25
50
g
Q
Q
V
= -10 V, V = -5 V, I = -9.9 A
nC
ns
gs
gd
DS
GS
D
t
40
70
d(on)
t
r
45
V
= -10 V, R = 15 W
L
= -4.5 V, R = 6 W
GEN G
DD
I
D
^ -1 A, V
Turn-Off Delay Time
Fall Time
t
150
70
225
110
60
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.3 A, di/dt = 100 A/ms
40
Notes
a
b
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 5 thru 2 V
24
18
12
6
1.5 V
T
= 125_C
C
25_C
-55_C
1 V
0
0
0
1
2
3
4
5
0.0
0.5
GS
1.0
1.5
2.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
www.vishay.com
2
Si4403BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.08
4000
3500
3000
2500
2000
1500
1000
500
0.06
0.04
C
iss
V
= 1.8 V
GS
V
V
= 2.5 V
GS
0.02
0.00
C
oss
= 4.5 V
24
GS
C
rss
0
0
6
12
18
30
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10 V
= 9.9 A
V
= 4.5 V
DS
GS
I
D
I = 9.9 A
D
0
7
14
21
28
35
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
0.02
0.00
30
10
T
= 150_C
J
I
D
= 9.9 A
I
D
= 3.1 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
www.vishay.com
3
Si4403BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
30
24
18
0.4
0.3
0.2
I
D
= 350 mA
0.1
0.0
12
6
-0.1
0
-0.2
-2
-1
10
10
1
10
100
1000
-50
-25
0
25
50
75
100 125 150
T
- Temperature (_C)
Time (sec)
J
Safe Operating Area
100
r
Limited
DS(on)
I
Limited
DM
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
T
A
= 25_C
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 71_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
www.vishay.com
4
Si4403BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
www.vishay.com
5
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